Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K404 has four channels in a 16-pin mini-flat SMD package. FEATURES • Mini-flat Package • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Type 600% (at IF=A1mA, VCE=2V) • Electrical Isolation Voltage : AC3750Vrms APPLICATIONS • AC Signal Input • Interface between two circuits of different potential • Automatic Vending Machine • Copiers, Industrial Robots DIMENSION K401 (Unit : mm) K402 3 1 2 7 6 5 1 2 3 4 4.4 4.4 Orientation Mark Orientation Mark 0.5 8.7 7.0 0.5 5.2 0.2 0.4Min. 2.54 0.1 2.54 0.05 0.4Min. 0.1 0.1 0.2 2.5 2.5 0.15 0.2 5.2 0.2 0.2 0.2 0.05 7.0 3.6 0.4 8 0.2 0.2 4 0.25 0.15 2.54 K404 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 7.0 0.5 5.2 0.2 4.4 0.2 16 Orientation Mark 0.2 0.4Min. 2.54 0.15 0.1 2.54 0.05 0.1 2.5 0.2 18.8 1/3 Photocoupler K401 • K402 • K404 MAXIMUM RATINGS Parameter Symbol Forward Current Input Peak Forward Current Power Dissipation *1 (Ta=25℃ ) Unit IF ±50 IFP ±1 A PD 70 mW mA TJ 125 ℃ Collector-Emitter Breakdown Voltage BVCEO 30 V Emitter-Collector Breakdown Voltage BVECO 5 V IC 50 mA Junction temperature Output Rating Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature *2 PC 150 mW Viso AC3750 Vrms Tstg -55~+125 ℃ Operating Temperature Topr -30~+85 ℃ Lead Soldering Temperature*3 Total Power Dissipation Tsol 260 ℃ Ptot 250 mW *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec (Ta=25 ELECTRO-OPTICAL CHARACTERISTICS Min. Typ. Max. Unit. Forward Voltage VF IF= ±10mA - 1.15 1.30 V Capacitance CT V=0, f=1kHz - 30 - pF IC=0.5mA 30 - - V Symbol Parameter Input Output Collector-Emitter Breakdown Voltage BVCEO Emitter-Collector Breakdown Voltage BVECO Condition IE=0.1mA 5 - - V Collector Dark Current ICEO IF=0, VCE=10V - - 100 nA Capacitance CCE VCE=0, f=1KHz - 10 - pF CTR IF= ±1mA, VCE=2V 300 - - % Current Transfer Ratio *4 IF= ±1mA, IC=2mA - 0.8 1.2 V Input-Output Capacitance CIO V=0, f=1KHz - 5 - pF Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 1011 - Ω Collector-Emitter Saturation Voltage Coupled , unless otherwise noted) VCE(SAT) Rise Time tr VCE=10V, RL=100 - 90 - ㎲ Fall Time tf IC=10mA - 120 - ㎲ *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K401 • K402 • K404 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 80 250 100 200 80 150 100 50 0 -20 100 Collector Current vs. Collector-Emitter Voltage Dark Current I CEO (u A) Collector Current I C (mA) 30 I F=2.5mA I F=2.0mA 20 P C(max.) I F=1.5mA 10 20 40 60 5000 1000 4 6 10 Collector Current vs. Forward Current 40 1 0.1 VCE=10V 0.01 0.001 0 20 40 60 80 100 Response Time vs. Load Resistance Switching Time Test Circuit RL VO tf tr Test Circuit Input 10 Output 10% 0.5 1 Load Resistance R L (㏀ ) Ta=25℃ VCE =2V 25 20 15 10 2 90% tr Waveform 3/3 tf 0 1 2 3 4 5 Forward Current I F (mA) VCC R VIN 0.2 1.6 Dark Current vs. Ambient Temperature Ambient Temperature Ta (℃ ) 0.1 1.2 Forward Voltage VF (V) Collector-Emitter Voltage VCE (V) VCE =10V I C=10mA Ta=25℃ 10 0.05 0.8 5 8 100 Ta=-55℃ 0.4 100 80 I F=1mA 2 Ta=25℃ 20 30 I F=3.0mA 0 Response Time tr , t f (us) 0 I F=3.5mA 40 Ta=70℃ 40 Ambient Temperature Ta (℃ ) 10 Ta=25℃ 60 0 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 6