Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC90 TC = 90°C 30 A ICM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH ICM = 60 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive 10 ms PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions BVCES IC = 750 mA, VGE = 0 V 600 VGE(th) IC = 2.5 mA, VCE = VGE 5 ICES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V 6 g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 30N60U1 30N60AU1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C E G = Gate, E = Emitter, C = Collector, TAB = Collector • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol IGES G Features 1.13/10 Nm/lb.in. Weight TO-247 AD V 8 • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 500 8 mA mA ±100 nA 2.5 3.0 V V Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost • High power density 92714F (12/96) 1-6 IXSH 30N60U1 IXSH 30N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % IC(on) VGE = 15 V, VCE = 10 V 7 C ies S 100 A 2760 pF 240 pF C res 51 pF Qg 110 150 nC 34 45 nC 47 63 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 13 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff 60 ns 130 ns 400 30N60U1 30N60AU1 30N60AU1 Inches Min. Max. 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 400 200 ns ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 2.5 mJ G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 60 ns 130 ns IC = IC90, VGE = 15 V, 4.2 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Dim. Millimeter Min. Max. A B Inductive load, TJ = 125°C L = 100 mH VCE = 0.8 VCES, RG = 4.7 W TO-247 AD (IXSH) Outline 30N60U1 30N60AU1 540 340 1000 525 ns ns 30N60U1 30N60AU1 600 340 1500 700 ns ns 30N60U1 30N60AU1 12 6 RthJC L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 mJ mJ 0.63 K/W RthCK 0.25 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 10 150 35 1.6 V 15 A ns ns 50 1 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.1 Saturation Characteristics 60 Fig.2 Output Characterstics 100 VGE = 15V TJ = 25°C VGE = 15V TJ = 25°C 50 80 40 IC - Amperes IC - Amperes 13V 30 11V 20 60 13V 40 11V 20 10 9V 7V 0 0 1 2 3 4 9V 0 5 0 2 4 6 8 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 Fig.4 Temperature Dependence of Output Saturation Voltage 1.8 TJ = 25°C 9 6 IC = 60A 5 4 IC = 30A 3 2 VCE(sat) - Normalized VCE - Volts 7 0 9 10 11 12 13 14 1.4 1.2 IC = 30A 1.0 IC = 15A 0.8 IC = 15A 1 IC = 60A VGE = 15V 1.6 8 8 10 12 14 16 18 20 0.6 -50 15 -25 0 25 50 75 100 125 150 TJ - Degrees C VGE - Volts Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 60 VCE = 10V BV / VGE(th) - Normalized IC - Amperes 50 40 30 TJ = 25°C 20 TJ = 125°C 10 TJ = - 40°C 0 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts © 2000 IXYS All rights reserved 1.2 BVCES IC = 3mA 1.1 1.0 0.9 VGE(th) 0.8 0.7 -50 IC = 2.5mA -25 0 25 50 75 100 125 150 TJ - Degrees C 3-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 10.0 1000 RG = 10W 1000 Eoff (-A) 5.0 500 tfi (-A) hi-speed Eoff - milliJoules 7.5 tfi - nanoseconds IC = 30A hi-speed 750 2.5 250 0 0 10 10.0 TJ = 125°C 20 30 40 50 750 7.5 Eoff (-A), hi-speed 500 tfi (-A), hi-speed 250 0 10 20 IC - Amperes 40 0.0 50 Fig.10 Turn-Off Safe Operating Area 100 IC = 30A VCE = 300V TJ = 125°C 12 RG = 4.7W 10 IC - Amperes VGE - Volts 30 RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 2.5 0 0.0 60 5.0 Eoff - millijoules TJ = 125°C tfi - nanoseconds Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 9 6 dV/dt < 6V/ns 1 0.1 3 0 0.01 0 25 50 75 100 125 150 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig.11 Transient Thermal Impedance 1 ZthJC (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tfr 100 25 1000 TJ = 125°C 60 IF = 37A 20 TJ = 150°C 800 VFR VFR - Volts Current - Amperes 80 TJ = 100°C 40 TJ = 25°C 20 15 600 10 400 5 tfr - nanoseconds Fig.12 Maximum Forward Voltage Drop 200 tfr 0 0.5 0 1.0 1.5 2.0 2.5 0 100 200 Voltage Drop - Volts 300 400 500 0 600 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 1.4 4 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM /Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 max. 2 typ. IF = 60A IF = 30A 1 IF = 15A 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C 1000 Fig.17 Reverse Recovery Time 40 0.8 TJ = 100°C IF = 30A VR = 350V IF = 30A TJ = 100°C max. VR = 350V max. trr - nanoseconds 30 IRM - Amperes 100 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current typ. IF = 60A 20 IF = 30A 3 IF = 30A IF = 15A 10 0 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 0.0 200 400 diF /dt - A/µs © 2000 IXYS All rights reserved 600 0 200 400 600 diF /dt - A/µs 5-6 IXSH 30N60U1 IXSH 30N60AU1 Fig.18 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds © 2000 IXYS All rights reserved 6-6