LS302 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS302 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS302 Features: Very high gain Tight matching Low Output Capacitance FEATURES HIGH GAIN LOW OUTPUT CAPACITANCE TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 1000 @ 1µA TYP. COBO ≤ 2.0pF |VBE1 – VBE2 |= 0.2mV TYP. 100MHz Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential MIN ‐‐ ‐‐ TYP 0.2 1 ‐‐ ‐‐ ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 5mA MAX 1 5 UNITS mV µV/°C 1 5 nA 5 ‐‐ % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V Click To Buy hFE1 /hFE2 DC Current Gain Differential ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 35 BVCEO Collector to Emitter Voltage 35 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 100 ‐‐ DC Current Gain hFE 1000 ‐‐ VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 100 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ 1000 ‐‐ 1000 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.5 0.2 100 2 2 0.5 ‐‐ 3 UNITS V V V V V pA pA pF pF nA MHz dB IC = 10µA, VCE = 5V CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 1µA, VCE = 5V IC = 10µA, VCE = 5V IC = 500µA, VCE = 5V IC = 1mA, IB = 0.1mA IC = 0, VEB = 3V IE = 0, VCB = 10V IE = 0, VEB = 1V VCC = 0V VCC = ±80V IC = 200µA, VCE = 5V IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOIC (Top View) Available Packages: LS302 in SOIC LS302 available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.