DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ540 NPN wideband transistor Product specification Supersedes data of 1998 Aug 27 2000 May 23 Philips Semiconductors Product specification NPN wideband transistor BFQ540 FEATURES DESCRIPTION • High gain NPN wideband transistor in a SOT89 plastic package. • High output voltage page • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base 1 2 3 Bottom view MBK514 • VHF, UHF and CATV amplifiers. Marking code: N4. Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. VCBO collector-base voltage open emitter − − 20 UNIT V VCES collector-emitter voltage RBE = 0 − − 15 V VEBO collector-base voltage open collector − − 2 V IC collector current (DC) − − 120 mA W Ptot total power dissipation Ts ≤ 60 °C; note 1 − − 1.2 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 12 13 − dB noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt − 1.9 2.4 dB s 21 F 2 Note 1. Ts is the temperature at the soldering point of the collector pin. 2000 May 23 2 Philips Semiconductors Product specification NPN wideband transistor BFQ540 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 120 mA Ptot total power dissipation − 1.2 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Ts ≤ 60 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MBG241 1.4 Ptot (W) 1.2 UNIT 95 K/W Ts ≤ 60 °C; Ptot = 1.2 W thermal resistance from junction to soldering point Rth j-s VALUE MBG244 103 handbook, halfpage IC (mA) 1.0 0.8 102 0.6 0.4 0.2 0 0 50 100 150 Tj (oC) 10 200 1 10 VCE ≤ 9 V. Fig.2 Power derating curve. 2000 May 23 Fig.3 SOAR. 3 VCE (V) 102 Philips Semiconductors Product specification NPN wideband transistor BFQ540 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS open emitter; IC = 10 µA; IE = 0 MIN. TYP. MAX. UNIT 20 − − V 15 − − V 2 − − V V(BR)CBO collector-base breakdown voltage V(BR)CES collector-emitter breakdown voltage RBE = 0; IC = 40 µA V(BR)EBO emitter-base breakdown voltage IE = 100 µA; IC = 0 ICBO collector-base leakage current VCB = 8 V; IE = 0 − − 50 nA IEBO emitter-base leakage current VCB = 1 V; IC = 0 − − 200 nA hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; fm = 1 GHz − 9 − GHz Ce emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.9 − pF insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 12 13 − dB output voltage note 1 − 500 − mV note 2 − 350 − mV s 21 2 Vo d2 second order intermodulation distortion note 3 − − −53 dB F noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt − 1.9 2.4 dB Notes 1. dim = −60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 Ω; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz; measured at fp + fq − fr = 793.25 MHz. 2. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 Ω; Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz; measured at 2fp − fq = 802 MHz. 3. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz. 2000 May 23 4 Philips Semiconductors Product specification NPN wideband transistor BFQ540 MRA688 1.0 MRA689 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8V 8 0.6 VCE = 4V 0.4 4 0.2 0 0 4 8 VCB (V) 0 10−1 12 1 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 10 IC (mA) Transition frequency as a function of collector current; typical values. MBG243 MBG242 20 20 handbook, halfpage handbook, halfpage d2 (dB) dim (dB) 30 30 40 40 50 50 60 60 70 70 20 10 30 40 50 10 60 IC (mA) Fig.7 Intermodulation distortion as a function of collector current; typical values. 2000 May 23 20 30 40 50 60 IC (mA) VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz; Tamb = 25 °C. VCE = 8 V; Vo = 475 mV; RL = 50 Ω. fp + fq − fr = 793.25 MHz; Tamb = 25 °C. Fig.6 102 5 Second order intermodulation distortion as a function of collector current; typical values. Philips Semiconductors Product specification NPN wideband transistor BFQ540 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION SOT89 2000 May 23 REFERENCES IEC JEDEC EIAJ TO-243 SC-62 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification NPN wideband transistor BFQ540 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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