ON NTR3A30PZT1G Power mosfet Datasheet

NTR3A30PZ
Power MOSFET
−20 V, −5.5 A, Single P−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Low RDS(on) Solution in 2.4 mm x 2.9 mm Package
• ESD Diode−Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) Max
Applications
ID MAX
38 mW @ −4.5 V
• High Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for Portable
−20 V
−5.5 A
50 mW @ −2.5 V
73 mW @ −1.8 V
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
P−Channel MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8
V
ID
−3.0
A
Drain Current (Note 1)
Drain Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−2.2
t≤5s
TA = 25°C
−5.5
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
tp = 10 ms
3
S
2
G
1
W
0.48
MARKING DIAGRAM &
PIN ASSIGNMENT
1.58
IDM
−9.1
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
ESD HBM, JESD22−A114
VESD
2000
V
Source Current (Body Diode) (Note 2)
IS
−0.48
A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
D
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
260
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
79
Drain
3
SOT−23
CASE 318
STYLE 21
TRH M G
G
1
Gate
2
Source
TRH
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [2 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
NTR3A30PZT1G
Package
Shipping†
SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 2
1
Publication Order Number:
NTR3A30PZ/D
NTR3A30PZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −20 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
VGS(TH)
VGS = VDS, ID = −250 mA
V
10.5
TJ = 25°C
mV/°C
−1
mA
±10
mA
−1.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
−0.4
−0.65
10.5
mV/°C
VGS = −4.5 V
ID = −3 A
31
38
VGS = −2.5 V
ID = −2.5 A
36
50
VGS = −1.8 V
ID = −1.5 A
51
73
VDS = −5 V, ID = −3 A
mW
30
S
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
1651
Output Capacitance
Coss
148
Reverse Transfer Capacitance
Crss
129
Total Gate Charge
QG(TOT)
17.6
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz, VDS = −15 V
nC
0.7
VGS = −4.5 V, VDS = −15 V, ID = −3 A
Gate−to−Source Charge
QGS
2.4
Gate−to−Drain Charge
QGD
4.9
td(on)
100
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDS = −15 V,
ID = −3 A, RG = 6.0 W
tf
ns
208
1043
552
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −0.4 A
TJ = 25°C
0.65
TJ = 125°C
0.47
1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR3A30PZ
TYPICAL CHARACTERISTICS
20
−6 V
20
−3 V
−2.5 V
16
14
12
−1.6 V
10
8
6
VGS = −1.4 V
4
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
14
12
10
TJ = 25°C
8
6
TJ = 125°C
4
1.0
1.5
2.0
2.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.11
0.10
TJ = 25°C
ID = −3.0 A
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.0
TJ = −55°C
0.5
4.5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
16
2
0
2
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.166
0.156
0.146
0.136
0.126
0.116
0.106
0.096
0.086
0.076
0.066
0.056
0.046
0.036
0.026
TJ = 25°C
VGS = −1.8 V
VGS = −4.5 V
VGS = −2.5 V
1
2
4
3
5
6
−VGS, GATE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100,000
1.4
1.3
TJ = 150°C
VGS = −4.5 V
ID = −3.0 A
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
VDS ≤ −5 V
18
−1.8 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
18
1.2
TJ = 125°C
10,000
1.1
1.0
0.9
1000
0.8
0.7
−50
100
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTR3A30PZ
2000
1800
CISS
1600
1400
1200
VGS = 0 V
TJ = 25°C
f = 1 MHz
1000
800
600
400
COSS
200 C
RSS
0
0
2
4
6
8
10
12
14
18
16
20
5
18
QT
15
4
VDS
VGS
9
QGS
2
QGD
1
0
0
2
4
6
8
10
12
14
16
3
0
18
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
−IS, SOURCE CURRENT (A)
10,000
t, TIME (ns)
6
VDS = −15 V
TJ = 25°C
ID = −3.0 A
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
td(off)
1000
tf
tr
td(on)
100
VGS = −4.5 V
VDD = −15 V
ID = −3.0 A
1
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.1
10
1
10
0.2
100
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.9
100
−ID, DRAIN CURRENT (A)
ID = −250 mA
0.8
0.7
−VGS(th) (V)
12
3
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2400
2200
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
0 ≤ VGS ≤ −8 V
Single Pulse
TC = 25°C
10
100 ms
1 ms
1
10 ms
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.3
0.2
−50
0.01
−25
0
25
50
75
100
125
150
0.1
1
DC
10
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Threshold Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTR3A30PZ
TYPICAL CHARACTERISTICS
1000
R(t) (°C/W)
50% Duty Cycle
100
20%
10%
5%
10
2%
1%
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. FET Thermal Response
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5
1
10
100
1000
NTR3A30PZ
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR3A30PZ/D