Powerex Power MJE15031 Gate driver Datasheet

M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Gate Driver
Hybrid Integrated Circuit
For Driving IGBT Modules
Block Diagram
1
+
Regulator
17.4 VDC
2
Viso=
2500VRMS
Fault
Latch and
Timer
3
-
VCC
18
GND
27
Fault
UV
Lock-Out
DC-DC
Converter
VD
15V
19
4
VGE
Detector
28 td
29
Adjust
VGE Detect
22
5
VIN
5V
+
-
390Ω
Interface
Buffer
6
23
VO
24
Optocoupler
17
Dimensions
Inches
Millimeters
A
3.27 Max.
83.0 Max.
B
1.18 Max.
30.0 Max.
C
0.59 Max.
15.0 Max.
D
0.24 Max.
6.0 Max.
E
2.80
71.12
F
0.22 Max.
5.5 Max.
G
0.18 Max.
4.5 Max.
H
0.43 Max.
11.0 Max.
VEE
Description:
M57161L-01 is a hybrid integrated
circuit designed for driving Powerex
F-Series IGBT modules. This gate
driver converts logic level control
signals into high current gate drive
with suitable on and off bias
voltages. Electrical isolation of the
input control signal is provided by an
integrated high-speed optocoupler.
A built-in isolated DC-DC converter
supplies gate drive power. The
driver
has
short-circuit
and
undervoltage
protection
and
provides a fault status feedback
signal.
Features:
High output current (±) 7A peak
Isolated
DC-DC
converter
provides +15.5V/-5V drive
High-speed optocoupler isolates
input signal
Short-circuit and undervoltage
protection
Application:
Gate drive for IGBT modules with
internal RTC circuit in motor drive,
UPS, welder, etc.
Recommended Modules:
Powerex 600V and 1200V
F-Series IGBT Modules
1
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
Absolute Maximum Ratings, Ta = 25°°C unless otherwise specified
Item
Symbol
Supply Voltage
VD
Input Voltage
VIN
Test Conditions
Ratings
Units
16
Volts
Applied between: Pin 5 - Pin 6
-1 ~ +7
Volts
Volts
Output Voltage
VO
ON State, VD = 15.7V
16.5
Output Current
IOHP
Pulse Width 1 µs,
-7
Amperes
IOLP
f ≤ 20kHz
7
Amperes
Isolation Voltage
Viso
Sine Wave Voltage, 60Hz, 1 minute
2500
Vrms
Case Temperature
TC
85
°C
Operating Temperature
Topr
-20 ~ +60
°C
Storage Temperature
Tstg
Fault Output Current
IFO
Applied 29 Pin
VR
Sink Current Pin 27
-25 ~ +100
°C
25
mA
VCC
Volts
Electrical Characteristics, Ta = 25°°C, VD = 15V, VIN = 5V, f = 20kHz, RG = 2.2Ω
Ω, CM600HU-24F unless otherwise specified
Item
Supply Voltage
Symbol
Test Conditions
Limits
Units
VD
Recommended Range
14.3
15.0
15.7
Volts
Input Voltage
VIN
Recommended Range
4.5
5.0
5.5
Volts
"H" Input Current
IIH
Recommended Range
9
10
11
mA
Switching Frequency
f
Recommended Range
—
—
20
kHz
Gate Resistor
RG
Recommended Range
2.2
—
—
Ω
"H" Input Current
IIH
VIN = 5V
—
10
—
mA
17.4
17.8
Volts
Gate + Supply Voltage
VCC
VIN = 0V, f = 0Hz
17.0
Gate - Supply Voltage
VEE
VIN = 0V, f = 0Hz
-5.5
-6.5
-7.5
Volts
"H" Output Voltage
VOH
14
15.5
16.5
Volts
"L" Output Voltage
VOL
-4.0
-5.0
-6.0
Volts
"L-H" Propagation Time
tPLH
IIH = 10mA
—
0-.4
1
µs
tr
IIH = 10mA
—
0.4
0.5
µs
tPHL
IIH = 10mA
—
1.3
2.0
µs
tf
IIH = 10mA
—
0.4
0.5
µs
ttimer
Duration with Input Signal in
OFF State
1.5
—
2.5
ms
IFO
Applied Pin 27, R = 470Ω
—
12
—
mA
tTRIP
Pin 29: 11V,
—
3.5
—
µs
td
Pin 28: Open
—
6.5
—
µs
VCC at UV Protect
VCL
Measured at Pin 18 – Pin 19
14.2
15.2
16.2
Volts
Short-circuit Detect Voltage
VSC
11.0
11.6
12.2
Volts
"L-H" Rise Time
"H-L" Propagation Time
"H-L" Fall Time
Timer
Fault Output Current
Short-circuit Detect Delay Time
Total Shut-down Time
2
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
3
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
1. Principle of Operation – RTC Detection and Short-Circuit Protection
V
+
Powerex F-Series (trench gate) IGBT modules have a built-in
DELAY
COMPARE
RTC (Real Time Control) circuit. The purpose of the RTC is to limit
C
short-circuit current and maintain a 10µs short-circuit withstanding
AND
F-Series
Shut-Down
capability. The RTC circuit limits the current by actively reducing the
IGBT
Module
R
gate voltage when excessive collector current is present. The M57161L- Input
G
GATE
DRIVE
01 gate driver uses a gate voltage detection circuit to sense the
activation of the RTC circuit inside the F-Series IGBT module. A
RTC
Circuit
E
simplified schematic of the RTC detector circuit is shown in Figure 1.
This circuit consists of a comparator with its (-) input connected
E
Figure 1 RTC Detector
to the gate of the IGBT module and its (+) input supplied with a fixed
reference voltage of VSC. In the normal ON state, the voltage on the
gate of the IGBT is nearly equal to the positive gate drive supply voltage, which exceeds VSC and makes the
comparator output low. In the normal OFF state, the gate voltage is nearly equal to the negative gate drive supply
voltage, which is less than VSC making the comparator output high. If a short circuit occurs, the RTC circuit inside
the F-Series IGBT module will activate and pull the gate voltage down below the VSC reference. This abnormal
presence of a gate voltage less than VSC when the IGBT is supposed to be on indicates
that the module’s RTC has been activated. This condition is identified by a logical AND of
Start
the gate driver’s control input signal and the comparator’s output as shown in Figure 1.
The output of the AND will go high when a short-circuit condition is detected. The output
Is
of the AND is then used to command the IGBT to shut down in order to protect it from the
VGE< VSC
NO
short circuit. A delay is provided after the comparators output to prevent the circuit from
indicating a short-circuit condition during the normal transition of gate voltage at turn-on.
YES
SC
G
+
2. Operation of the M57161L-01 RTC Detector
The Powerex M57161L-01 hybrid gate drive circuit implements RTC detection as
described above. A flow chart for the logical operation of the short-circuit protection is
shown in Figure 2. When the IGBT module’s RTC is activated the hybrid gate driver
performs a soft shut-down of the IGBT and starts a timed lock-out, ttimer, typically 2.0ms.
The soft turn-off helps to limit the transient voltage that may be generated while
interrupting the short-circuit current flowing in the IGBT. During the lock-out a fault
feedback signal is asserted and all input signals are ignored. Normal operation of the
driver will resume after the lock-out time has expired and the control input signal returns to
its off state.
This protection scheme is superior to conventional desaturation detection because
it avoids the need for a high voltage detection diode, and reduces spacing requirements on
the gate drive printed circuit board. In addition, noise immunity is improved because the
driver is not connected to the high voltage on the IGBT’s collector.
3. Adjusting Protection Delay Time
The M57161L-01 has a default short-circuit detection time delay (tTRIP) of
approximately 3.5µs. This will prevent erroneous detection of short-circuit conditions as
long as the series gate resistance (RG) is near the minimum recommended value for the
module being used. The 3.5µs delay is appropriate for most applications so adjustment
will not be necessary. However, in some low frequency applications it may be desirable to
use a larger series gate resistance to slow the switching of the IGBT for reduced noise and
turn-off transient voltages. As the RG is increased, the rise of gate voltage is slowed and in
4
Is Input
Signal ON
NO
YES
Delay
Is
VGE< VSC
NO
YES
Slow Shut-down
Disable Output
Set Fault Signal
Wait ttimer
Is Input
Signal OFF
NO
YES
Clear Fault
Signal
Enable Output
Figure 2 Flow Chart
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
some cases it may not exceed VSC before the tTRIP
delay expires.
If this happens the driver will
erroneously indicate that a short circuit has occurred.
To avoid this condition the M57161L-01 has
provisions for extending the tTRIP delay by connecting
a capacitor (CTRIP) between pins 28 and 18. If tTRIP is
extended care must be exercised not to exceed the
short-circuit withstanding capability of the IGBT
module. Normally this will be satisfied for Powerex FSeries IGBT modules as long as the total shut-down
time (td) does not exceed 10µs. The total shut down
time (td) consists of the tTRIP delay plus a propagation
delay of approximately 2.5µs. A curve showing the
relationship between td, tTRIP and CTRIP is shown in
Figure 3. The CTRIP capacitor must be selected so
that the gate voltage exceeds VSC before the shortcircuit detection time tTRIP expires.
Figure 3 CTRIP versus tTRIP and td
12
10
t (us)
8
6
4
td
2
t(TRIP)
0
0
50
100
150
200
250
CTRIP (pF)
4. Undervoltage Lock-out
VOH (V)
The M57161L-01 hybrid gate driver is
Figure 4 Supply Voltage versus
designed to operate from a single 15V control power
On-State Gate Voltage
supply, VD. For proper operation this supply should
be between 14.3V and 15.7V. If the VD supply
20
becomes low, then the on-state drive voltage for the
15
IGBT will also decrease.
In order to prevent
dangerously low drive voltages the M57161L-01 has
10
an undervoltage protection circuit. If the output
voltage of the DC-DC converter at pin 19 (VCC)
5
becomes less than the data sheet specified trip level
0
(VCL), the output will turn off and a fault signal will be
10
11
12
13
14
15
16
17
18
generated. Figure 4 shows the effect of the UV lock(V)
V
out on the gate voltage as a function of input voltage.
D
In order for normal operation to resume, the VCC
voltage must exceed the undervoltage trip level (VCL). Operation of the undervoltage protection circuit may also
occur during power up and power down. The system controller's program should take this fault into account.
5. Application Circuit for M57161L-01
An example application circuit for the M57161L-01 hybrid gate driver is shown in Figure 5. The input circuit
between pins 5 and 6 consists of the built-in optocoupler’s LED in series with a 390Ω resistor. This combination is
designed to provide approximately 10mA of drive current for the optocoupler when a control signal of 5V is
applied. If another control voltage is desired then an external current limiting resistor can be added. The value of
the external resistor can be calculated by assuming the forward voltage drop of the optocoupler’s photodiode is
2V. For example, if 15V drive is desired the required external resistor would be: (15V-2V)÷10mA - 390Ω = 910Ω.
The hybrid circuit operates from a single 15V control power supply (VD) that is connected at Pins 1,2 and 3,4.
The control power supply must be decoupled with a capacitor connected as close as possible to the driver’s pins.
This decoupling capacitor is included to provide a stable, well-filtered voltage for the primary side of the driver’s
built-in DC-DC converter. When selecting the input decoupling capacitor it is important to insure that it has a
5
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
Figure 5 M57161L-01 Typical Application Circuit
sufficiently high ripple current rating.
The example circuit in Figure 5 uses
a 150µF low impedance type
electrolytic for the input decoupling
capacitor.
M57161L-01
The driver’s built-in DC-DC
1
6
converter produces isolated +17.4V
17
19
22
24
27
29
and -6.5V outputs at pins 19 and 17
+
with respect to the common pin 18.
3.3k
RG
+
2.2µF
These voltages are supplied to
G
150µF
+ - FO
driver’s output stage on pins 22 and
C
+
TRIP
150µF
150µF
V
RTC
in
V
470Ω
24 to provide high current gate drive
+ D
E
with on and off driving voltages of
IGBT Module
+15.5V and –5V. In order to deliver
the pulse current necessary for efficient switching, the output of the isolated DC-DC converter (pins 17, 18 and 19)
must be decoupled using a combination of low impedance electrolytic and film capacitors. In Figure 5 the 150µF
low impedance electrolytics and a 2.2µF stacked film or multi-layer ceramic are included for this purpose. These
capacitors should be located as close as possible to the pins of the hybrid gate driver. When driving small
modules it is usually acceptable to use smaller capacitors provided that that they have sufficient ripple current
capability and low enough impedance. However, very large modules and parallel module applications may require
500µF or more to achieve low enough impedance and high enough ripple current capability.
The series gate resistor (RG) should be selected based on the application requirements and module type being
used. Details for selecting RG can be found in Powerex IGBT module application notes. The minimum allowable
RG for the M57161L-01 is 2.2Ω. If a smaller value is desired, a booster stage must be added. (See Section 7.)
The back-to-back zener diodes from G to E that are normally recommended are not required with F-Series IGBT
modules because they are included as part of the modules internal RTC circuit.
Pin 28 is used to adjust the RTC detection time and total shut-down time. This adjustment was described in
detail in Section 3. To extend the trip time, CTRIP can be connected as shown in Figure 5. This capacitor should
be located as close as possible to the pins of the gate driver.
Pin 27 is an active low fault status signal. When a fault (short circuit or undervoltage) is detected this pin is
pulled down to the VEE supply. In Figure 5 a low speed optocoupler is utilized to provide isolation of the fault
feedback signal. The optocoupler is connected from the common of the isolated power supply (pin 18) to the fault
signal pin using a 470Ω current limiting resistor. When a fault occurs a current of approximately 10mA will flow in
the optocoupler’s LED. A 3.3kΩ resistor connected across the opto’s photodiode helps to improve noise immunity.
6. Control Power Supply Requirements
ID (mA)
Figure 6 Supply Current versus Gate Charge
The control power supply current
required for the M57161L-01 is primarily a
500
function of the gate charge (QG) of the
VGE = +15V/-5V
400
IGBT module being driven and the
switching frequency. Figure 6 shows the
300
15V control power supply current (ID) as a
200
function of IGBT module gate charge for
100
various switching frequencies. This curve
provides an estimate of the required
0
current.
The actual current will vary
0
2
4
6
8
10
depending on the operating conditions of
QG (µC)
the IGBT module. To accommodate these
variations, it is recommended that the 15V
supply be designed to provide 150% - 200% of the value indicated in Figure 6.
6
5 kHz
10 kHz
15 kHz
20 kHz
M57161L-01
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
7. Driving Large IGBT Modules
In order to achieve efficient, reliable operation of large IGBT modules or multiple parallel connected
modules, a gate driver with high pulse current capability is required. The M57161L-01 hybrid gate driver is
designed to perform this function as a stand-alone unit in most applications. However, for optimum performance
with very large modules, it may be necessary to add an output booster stage to the hybrid gate driver. A booster
stage is required when the desired series gate resistance is lower than the minimum RG specified on the gate
driver’s data sheet.
Figure 7 M57161L-01 Typical Application Circuit With Booster Stage
M57161L-01
1
1N4148
6
17
+
VD
19
22
27
24
3.3k
+
150µF
2N4401 4.7kΩ
CTRIP
470Ω
+
VIN
+
FO
29
RO
2.2µF
470µF 470µF
+
Q1
Q2
RG
RG
RTC
RTC
Figure 7 is a schematic showing the M57161L-01 with an added booster stage consisting of a
complimentary transistor pair driving two parallel connected IGBT modules. The NPN and PNP booster transistors
(Q1, Q2) should be fast switching (tf < 200nS) and have sufficient current gain to deliver the desired peak output
current. Table 1 lists some combinations of booster transistors that can be used in the circuit shown in Figure 7.
The series resistor (RO) connected from the driver’s output on pin 23 to the booster stage is used to limit the peak
base current and help to damp oscillations in the booster stage. In most applications RO should be set so that RO
= hfe x RG, where hfe is the minimum gain of the booster stage transistors and RG is the series gate resistance.
Note that if the application has parallel modules then the effective RG must be used in the above equation. For
example, if there are 2 modules in parallel then RO = hfe x RG/2. When parallel connected modules are used with
the M57161L-01 it is also necessary to include a diode OR circuit so that the gates of the paralleled modules can
be independently monitored. An example of the diode OR is also shown in Figure 7.
Table 1 Booster Stage Transistors
Q1
NPN
MJD44H11
D44VH10
MJE15030
2SC4151
ZTX851
Q2
PNP
MJD45H11
D45VH10
MJE15031
2SA1601
ZTX951
Peak
current
15A
20A
15A
30A
20A
VCEO
80V
80V
150V
40V
80V
Manufacturer
ON Semiconductor
ON Semiconductor
ON Semiconductor
Shindengen
Zetex
Package
D2-Pac
TO-220
TO-220
Isolated TO-220
TO-92
7