B Z T52C2V4W THRU B Z T52C75W SOD1 23 Plastic-Encapsulate Diodes Zener Diodes Features ●Pd ●Vz SOD1 23 500mW 2.4V- 75V Applications ● Stabilizing Voltage Unit Pd mW Zener current IZ mA PV /VZ Maximum junction temperature Tj ℃ 150 Tstg ℃ -65 to +150 Power dissipation Storage temperature range Conditions Max Symbol Item TA=25℃ 500 Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Symbol Thermal resistance RθJA Forward voltage VF Unit Conditions Max ℃/W Between junction and ambient 340 V IF =10mA 0.9 High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Zener Voltage Range Type Marking Code 1) Reverse Leakage Current Dynamic Impedance Vznom VZT at IZT ZZT at IZT ZZK at IZK IR at VR V V mA Max. (Ω) mA Max. (Ω) mA Max. (μA) V BZT52C2V4W MH 2.4 2.2...2.6 5 100 5 600 1 50 1 BZT52C2V7W MJ 2.7 2.5...2.9 5 100 5 600 1 20 1 BZT52C3V0W MK 3.0 2.8...3.2 5 95 5 600 1 10 1 BZT52C3V3W MM 3.3 3.1...3.5 5 95 5 600 1 5 1 BZT52C3V6W MN 3.6 3.4...3.8 5 90 5 600 1 5 1 BZT52C3V9W MP 3.9 3.7...4.1 5 90 5 600 1 3 1 BZT52C4V3W MR 4.3 4...4.6 5 90 5 600 1 3 1 BZT52C4V7W MX 4.7 4.4...5 5 80 5 500 1 3 2 BZT52C5V1W MY 5.1 4.8...5.4 5 60 5 480 1 2 2 BZT52C5V6W MZ 5.6 5.2...6 5 40 5 400 1 1 2 BZT52C6V2W NA 6.2 5.8...6.6 5 10 5 150 1 3 4 BZT52C6V8W NB 6.8 6.4...7.2 5 15 5 80 1 2 4 BZT52C7V5W NC 7.5 7...7.9 5 15 5 80 1 1 5 BZT52C8V2W ND 8.2 7.7...8.7 5 15 5 80 1 0.7 5 BZT52C9V1W NE 9.1 8.5...9.6 5 15 5 100 1 0.5 6 BZT52C10W NF 10 9.4...10.6 5 20 5 150 1 0.2 7 BZT52C11W NH 11 10.4...11.6 5 20 5 150 1 0.1 8 BZT52C12W NJ 12 11.4...12.7 5 25 5 150 1 0.1 8 BZT52C13W NK 13 12.4...14.1 5 30 5 170 1 0.1 8 BZT52C15W NM 15 13.8...15.6 5 30 5 200 1 0.1 10.5 BZT52C16W NN 16 15.3...17.1 5 40 5 200 1 0.1 11.2 BZT52C18W NP 18 16.8...19.1 5 45 5 225 1 0.1 12.6 BZT52C20W NR 20 18.8...21.2 5 55 5 225 1 0.1 14 BZT52C22W NX 22 20.8...23.3 5 55 5 250 1 0.1 15.4 BZT52C24W NY 24 22.8...25.6 5 70 5 250 1 0.1 16.8 BZT52C27W NZ 27 25.1...28.9 2 80 2 300 0.5 0.1 18.9 BZT52C30W PA 30 28...32 2 80 2 300 0.5 0.1 21 BZT52C33W PB 33 31...35 2 80 2 325 0.5 0.1 23.1 BZT52C36W PC 36 34...38 2 90 2 350 0.5 0.1 25.2 BZT52C39W PD 39 37...41 2 130 2 350 0.5 0.1 27.3 BZT52C43W 6A 43 40...46 2.5 130 2 500 1 2 33 BZT52C47W 6B 47 44...50 2.5 150 2 500 1 2 36 BZT52C51W 6C 51 48...54 2.5 180 2 500 1 1 39 BZT52C56W 6D 56 52...60 2.5 180 2 500 1 1 43 BZT52C62W 6E 62 58...66 2.5 200 2 500 1 0.2 47 BZT52C68W 6F 68 64...72 2.5 250 2 500 1 0.2 52 BZT52C75W 6H 75 70...79 2.5 300 2 500 1 0.2 57 1) VZT is tested with pulses (20 ms). High Diode Semiconductor 2 Typical Characteristics Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 3V9 2V7 6V8 4V7 Iz 3V3 40 8V2 5V6 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 7 9 8 10 V Vz Breakdown characteristics Tj = constant (pulsed) mA 30 Tj=25 oC 10 12 Iz 15 20 18 22 27 Test current Iz 5mA 10 33 0 0 10 20 30 40 V Vz Power Dissipation: Ptot (mW) 600 500 400 300 200 100 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O Power Dissipation vs Ambient Temperature High Diode Semiconductor 3 SOD-1 23 Package Outline Dimensions SOD-1 23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOD123 1.50 High Diode Semiconductor 5