POWER LPM9014 N-channel enhancement mode field effect transistor Datasheet

LPM9014
LPM9014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The LPM9014 uses advanced
trench technology to provide excellent
RDS(ON), low gate charge and
operation with gate voltages as low as
1.8V. This device is suitable for use as a
load switch or in PWM applications.
Standard Product LPM9014 is Pb-free
(meets
ROHS
&
Sony
259
specifications). LPM9014L is a Green
Product ordering option. LPM9014 and
LPM9014L are electrically identical.
VDS (V) = 20V
ID = 4.2A
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)
Pin Configurations
LPM9014 Sep..-2003
1-3
LPM9014
LPM9014 Sep..-2003
2-3
LPM9014
LPM9014 Sep..-2003
3-3
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