Rohm DTA114EUA 100ma / 50v digital transistors (with built-in resistors) Datasheet

100mA / 50V Digital transistors
(with built-in resistors)
DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zDimensions (Unit : mm)
DTA114EB
0.1
0.22
0.16
0.1
1.0
0.8
(3)
(1)
(2)
(1) IN
(2) GND
(3) OUT
0.37
0.17
0.35
0.6
Each lead has same dimensions
Abbreviated symbol : 14
0.7
1.6
DTA114EE
1.2
0.32
0.55
0.3
(3)
0.8
0.8
1.2
0.2
(1)(2)
0.4 0.4
(2)
0.13
(1) IN
(2) GND
(3) OUT
0.5
0.8
2.0
0.2
2.9
0.7
1.1
0.8
(3)
1.6
2.8
2.1
1.25
0.15
0.1Min.
(1)
0.65 0.65
1.3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
0.4
(3)
(2)
0.15
Abbreviated symbol : 14
DTA114EKA
0.9
0.3
ROHM : UMT3
EIAJ : SC-70
0.2
1.0
ROHM : EMT3
Abbreviated symbol : 14
(1)
0.5 0.5
Each lead has same dimensions
ROHM : VMT3
DTA114EUA
0.2
Each lead has same dimensions
Abbreviated symbol : 14
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c 2009 ROHM Co., Ltd. All rights reserved.
○
(2)
(1) GND
(2) IN
(3) OUT
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
1/3
0.3Min.
0.22
0.1Min.
(3)
1.6
DTA114EM
0.2
ROHM : VMN3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : 14
2009.03 - Rev.C
DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
zPackaging specifications
Type
Data Sheet
zEquivalent circuit
Package
VMN3
VMT3
EMT3
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
T2L
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
8000
3000
3000
3000
−
−
−
−
−
−
−
−
−
OUT
R1
IN
R2
GND(+)
DTA114EB
DTA114EM
−
DTA114EE
−
−
DTA114EUA
−
−
−
DTA114EKA
−
−
−
OUT
IN
GND(+)
−
−
R1=R2=10kΩ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
DTA114EB DTA114EM
DTA114EE DTA114EUA DTA114EKA
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−40 to +10
V
IO
−50
IC(Max.)
−100
Output current
mA
Power dissipation
Pd
Junction temperature
Tj
150
150
200
°C
Storage temperature
Tstg
−55 to +150
°C
mW
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Symbol Min.
Typ.
Max.
VI(off)
−
−
−0.5
Unit
Conditions
VI(on)
−3
−
−
V
VO=−0.3V, IO=−10mA
VO(on)
−
−
−0.3
V
IO/II=−10mA/−0.5mA
VCC=−5V, IO=−100µA
II
−
−
−0.88
mA
VI=−5V
IO(off)
−
−
−0.5
µA
VCC=−50V, VI=0V
DC current gain
GI
30
−
−
−
VO=−5V, IO=−5mA
Input resistance
R1
7
10
13
kΩ
Resistance ratio
R2/R1
0.8
1
1.2
−
−
250
−
MHz
Input current
Output current
Transition frequency
fT ∗
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/3
2009.03 - Rev.C
DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
Data Sheet
zElectrical characteristic curves
−100
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−10
−5
−2
−10m
−5m
VO=−0.3V
−50
Ta=−40°C
25°C
100°C
−1
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−2m
−1m
−500µ
VCC=−5V
Ta=100°C
25°C
−40°C
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
200
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−1.5
−2.0
−2.5
−3.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
−1
−500m
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
Ta=100°C
25°C
−40°C
−1.0
INPUT VOLTAGE : VI(off) (V)
VO=−5V
500
−0.5
−200m
lO/lI=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
3/3
2009.03 - Rev.C
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