CSRB120 thru CSRB1200 REVERSE VOLTAGE - 20 to 200 Volts SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FORWARD CURRENT - 1.0 Ampere SOD-123 FEATURES ‧ ‧ ‧ ‧ High Current Capability Extremely Low Thermal Resistance For Surface Mount Application Higher Temp Soldering:250°C for 10 Seconds at Terminals ‧ Low Forward Voltage ‧ RoHS Compliant Product ‧ AEC-Q101 qualified 0.110(2.80) 0.102(2.60) 0.053(1.35) 0.031(0.80) 0.075(1.90) 0.067(1.70) MECHANICAL DATA ‧ ‧ ‧ ‧ ‧ ‧ ‧ Case: SOD-123FL Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 Terminals:Lead Free Plating (Tin Finish) Soldurable per MIL-STD-202,Method 208 Polarity:Cathode Band Weight:0.015 grams (approximate) 0.045(1.15) 0.032(0.81) 0.012(0.30) 0.002(0.05) 0.154(3.90) 0.130(3.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20% PARAMETER SYMBOL CSRB CSRB CSRB CSRB CSRB CSRB CSRB CSRB 120 130 140 160 180 1100 1150 1200 UNIT Maximum recurrent peak reverse voltage VRRM 20 30 40 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 60 80 100 150 200 V maximum average forward rectified current Peak forward surge current,8.3mssingle half sine-wave superim posed on rated load Maximum instantaneous@25°C IF 1.0 A IFSM 30.0 A VF Marking code Maximum DC Reverse Current at Rated DC Blocking Voltage@25°C 0.52 C2 C3 IR 0.66 C4 C6 0.83 C8 CA 0.5 0.87 0.90 CB CC 0.2 V mA Typical Junction Capacitance(note1) CJ Typical Thermal Resistance(note2) RθJa 100 °C/W TJ -50~150 °C TSTG -65~175 °C Operating Temperature Range Storage Temperature Range 100 70 50 30 pF NOTES: 1. Measured at 1MHz and applied reverse of 4V DC. 2. Device mounted on FR-4 substrate,1”*1”,2oz,single-sided,PC boards with 0.1”*0.15 copper pad. V0.0 2012-06 http://ctc-semicon.com P1/2 CSRB120 thru CSRB1200 RATINGS AND CHARACTERISTIC CURVES FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE FIG. 2-TYPICAL FORWARD CHARATERISTIC 100.00 2 INSTANTANEOUS FOR RWARD CURRENT (A) AVERAGE FORW WARD CURRENT,(A) ERS120P~ERS140P 1.5 1 0.5 0 0 25 50 75 100 125 150 ERS160P ERS180P~ERS1100P 10.00 ERS1150P ERS1200P 1.00 0.10 TJ=25℃ PULSE WIDTH 300us 2% DUTY CYCLE 0.01 0.2 0.4 AMBIENT TEMPERATURE(℃) TJ=25℃ 8.3ms Single Half Sine Wave JEDEC method 20 15 10 5 1.0 100 0 1 0.8 FIG. 4-TYPICAL REVERSE CHARATERISTIC REVERSE LEAKAGE CU URRENT (mA) PEAK FORWARD SURGE C CURRENT (A) FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 25 0.6 FORWARD VOLTAGE (V) 10 100 NUMBER OF CYCLES AT 60Hz 10 1 0.1 25℃ 0.01 100℃ 0 001 0.001 20 40 60 80 100 PERCENTAGE RATED PEAK REVERSE VOLTAGE (%) FIG. 5-TYPICAL JUNCTION CAPACITANCE 200 ERS120P~ERS140P ERS150P ERS160P ERS150P~ERS160P JUNCTION CAPACITANCE (pF) 160 ERS180P~ERS1100P ERS1150P 120 ERS1200P 80 40 0 0 1 10 100 REVERSE VOLTAGE (V) V0.0 2012-06 http://ctc-semicon.com P2/2