LED Infrared LED L1909 TO-46 type GaAlAs infrared LED Features Applications l High radiant output power l Direct modulation possible l High reliability and long life l Auto-focus l Automatic control systems l Optical switches l Mark sensors l Optical remote control ■ Absolute maximum ratings (Ta=25 °C) Parameter Forward current Reverse voltage Symbol IF VR Pulse forward current IFP Operating temperature Storage temperature Topr Tstg Condition Pulse width=10 µs Duty ratio=1 % Value 80 5 Unit mA V 1.0 A -30 to +85 -40 to +100 * °C °C * Guaranteed to resist temperature cycle test of up to 5 cycles. ■ Electrical and optical characteristics (Ta=25 °C) Parameter Peak emission wavelength Spectral half width Forward voltage Pulse forward voltage Reverse current Radiant flux Radiant illuminance Rise time Fall time Symbol λp ∆λ VF VFP IR φe PE tr tf Condition IF=50 mA IF=50 mA IF=50 mA IF=1.0 A VR=5 V IF=50 mA IF=50 mA IF=50 mA, 10 to 90 % IF=50 mA, 90 to 10 % Min. 870 8 - Typ. 890 80 1.4 2.8 10 1.0 0.45 0.45 Max. 920 1.5 3.4 5 0.7 0.7 Unit nm nm V V µA mW mW/cm2 µs µs L1909 Infrared LED ■ Emission spectrum 1000 FORWARD CURRENT (mA) RADIANT FLUX (mW) 100 60 40 10 1 20 800 900 0.1 1000 1 10 WAVELENGTH (nm) 100 10˚ 20˚ 30˚ 80 % 60 % 40˚ 50˚ 40˚ 50˚ 40 % 60˚ 60˚ 20 % 70˚ 70˚ 80˚ 80˚ 90˚ 90˚ RELATIVE RADIANT OUTPUT (%) ■ Allowable forward current vs. duty ratio +1 0 -1 -2 -3 -4 -20 0 20 40 60 80 100 (Typ.) 80 60 40 20 0 -40 -20 5.4 ± 0.1 4.2 ± 0.1 PULSE WIDTH=1 µs 40 60 80 100 KLEDB0027EB 0.1 0.45 LEAD 0.1 1 DUTY RATIO (%) 10 13.5 1.12 ± 0.1 10 µs 100 µs 0.01 0.01 20 ■ Dimensional outline (unit: mm) CLEAR EPOXY RESIN 1 0 AMBIENT TEMPERATURE (˚C) KLEDB0150EA (Typ. Ta=25 ˚C) 10 KLEDB0121EA 100 AMBIENT TEMPERATURE (˚C) KLEDB0118EA 3.0 ■ Allowable forward current vs. ambient temperature +2 -5 -40 2.5 (Typ. IF=50 mA) +3 RELATIVE RADIANT OUTPUT (dB) 30˚ 2.0 FORWARD VOLTAGE (V) RELATIVE ALLOWABLE FORWARD CURRENT (%) 0˚ 1.5 KLEDB0120EA ■ Radiant output vs. ambient temperature (Typ. Ta=25 ˚C) 100 % 10 FORWARD CURRENT (mA) ■ Directivity 10˚ 100 1 1.0 1000 KLEDB0117EB 20˚ (Typ. Ta=25 ˚C, tw=100 µs, 1 %) 1000 80 0 700 ALLOWABLE FORWARD CURRENT (A) ■ Forward current vs. forward voltage (Typ. Ta=25 ˚C, tw=100 µs, 0.1 %) 2.3 ± 0.3 100 RELATIVE RADIANT OUTPUT (%) ■ Radiant flux vs. forward current (Typ. Ta=25 ˚C, IF=50 mA) 2.54 ± 0.2 100 KLEDB0038EA COMMON TO CASE KLEDA0009ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KLED1014E01 Apr. 2001 DN