H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features • Low on - resistance RDS (on) = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2) PRSS0004ZD-C (Previous code: DPAK-(S)) 4 D G 4 1 2 3 1. Gate 2. Drain 3. Source 4. Drain H7N0603DS S 1 2 3 H7N0603DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50Ω Rev.2.00, Jan.26.2005, page 1 of 8 Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Ratings 60 ±20 30 120 30 25 53.6 40 150 –55 to +150 Unit V V A A A A mJ W °C °C H7N0603DL, H7N0603DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer capacitance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) fall time Body - drain diode forward voltage Body – drain diode reverse recovery time Notes: 1. Pulse Test Rev.2.00, Jan.26.2005, page 2 of 8 tf VDF trr Min 60 ±20 — — 1.5 — — 24 — — — — — — — — — Typ — — — — — 11 16 40 3200 385 225 56 11 12 30 125 90 Max — — ±10 10 2.5 15 22 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns — — — 17 0.9 30 — — — ns V ns Test condition ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 VNote1 ID = 15 A, VGS = 4.5 VNote1 ID = 15 A, VDS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A RL = 2.0 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0Note1 IF = 30 A, VGS = 0 diF / dt = 100 A / µs H7N0603DL, H7N0603DS Main Characteristics Power vs. Tmperature Derating Maximum Safe Operation Area 1000 (A) 300 40 100 0µ ID 30 Drain Current 20 10 10 DC Operation (Tc = 25°C) 3 1 50 100 150 Case Temperature PW = 10 ms (1 shot) 0.3 Operation in 0.1 this area is 0.03 0.01 Ta = 25°C 0.1 0.3 1 200 Pulse Test 3.5 V 20 10 3V (A) 40 30 20 150°C 10 25°C Tc=–40°C 2.5 V 4 6 Drain to Source Voltage 8 0 10 2 VDS (V) 300 ID = 20 A 200 10 A 5A 12 4 8 Gate to Source Voltage Rev.2.00, Jan.26.2005, page 3 of 8 8 10 VGS (V) 100 Pulse Test 30 VGS = 4.5 V 10 10 V 3 1 16 VGS Drain Source On State Resistance RDS(on) (mΩ) 400 0 6 Static Drain to Source State Resistance vs. Drain Current Pulse Test 100 4 Gate to Source Voltage Drain Source Saturation Voltage vs. Gate to Source Voltage 500 100 VDS = 10 V Pulse Test ID 4.0 V 4.5 V 2 30 VDS (V) Typical Trasfer Characteristics 30 0 10 50 Drain Current (A) ID 40 VGS = 10 V 5.0 V 3 Drain to Source Voltage Tc (°C) Typical Output Characterristics 50 Drain Current s limited by RDS(on) 0 Drain to Source Voltage VDS(on) (mV) µs s m 30 10 10 1 Channel Dissipation Pch (W) 50 20 (V) 1 10 3 Drain Current ID 30 (A) 100 H7N0603DL, H7N0603DS Forward Transfer Admittance vs. Drain Current 50 Forward Transfer Admittance |yfs| (S) Drain Source On State Resistance RDS(on) (mΩ) Static Drain to State Resistance vs. Temperature Pulse Test 40 30 5, 10, 20 A 20 4.5 V 10 0 –50 0 50 100 Case Temperature Tc = –40°C 10 1 25°C 0.1 150°C 0.01 0.001 5, 10, 20 A VGS = 10 V 100 150 VDS = 10 V Pulse Test 0.0001 0.001 0.01 Drain Current ID Tc (°C) 30 10 3 1 3 10 Reverse Drain Current 30 IDR Ciss 1000 300 Coss 100 Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 100 (A) Dynamic Input Characteristics 100 40 20 0 12 8 VDD = 50 V 25 V 10 V 20 40 60 Reverse Drain Current Rev.2.00, Jan.26.2005, page 4 of 8 4 0 80 100 Qg (nc) (V) 300 Switching Time t (ns) VDS VDD = 50 V 25 V 10 V VGS 16 Gate Source Voltage (V) VDS Drain to Source Voltage VGS 80 60 Switching Characteristics 1000 20 ID = 30 A 100 (A) 3000 100 0.3 10 10000 di / dt = 100 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 1 0.1 1 Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 300 0.1 tr tf td(off) 100 30 td(on) tr tf 10 VGS = 10 V, VDD = 30 V 3 PW = 5 µs, duty < 1 % Rg = 4.7 Ω 1 0.1 0.3 3 10 1 30 Drain Current ID (A) 100 H7N0603DL, H7N0603DS Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 V 40 30 5V 20 VGS = 0, –5 V 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (mJ) 50 80 Repetitive Avalanche Energy EAR Maximum Avalanche Energy vs. Channel Temperature Derating 64 IAP = 25 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 48 32 16 0 25 (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width γs (t) 3 Normalized Transient Thermal Impedance Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch - c(t) = γs (t) • θch - c θch - c = 3.125°C/ W, Tc = 25°C 0.05 2 0.0 0.03 PDM 1 0.0 D= ot PW T PW 1sh T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) Avalanche Test Circuit V DS Monitor 1 10 Avalanche Waveform EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 Rev.2.00, Jan.26.2005, page 5 of 8 VDD H7N0603DL, H7N0603DS Switching Time Test circuit Switching Time Waveform Vout Monitor Vin Monitor Rg 90% D.U.T. RL Vin Vout Vin 10 V V DS = 30 V 10% 90% td(on) Rev.2.00, Jan.26.2005, page 6 of 8 10% tr 10% 90% td(off) tf H7N0603DL, H7N0603DS Package Dimensions • H7N0603DL RENESAS Code Previous Code MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 • H7N0603DS RENESAS Code Previous Code MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00, Jan.26.2005, page 7 of 8 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H7N0603DL, H7N0603DS Ordering Information Part Name H7N0603DL H7N0603DSTL H7N0603DL-E H7N0603DSTL-E Quantity 100 pcs 3000 pcs 100 pcs 3000 pcs Shipping Container Sack Taping Sack Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Jan.26.2005, page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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