NEC NE960R5 0.5 w x, ku-band power gaas mes fet Datasheet

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are
available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability
and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
: Po (1 dB) = +27.5 dBm TYP.
• High Linear Gain
: 9.0 dB TYP.
• High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
Package
00 (CHIP)
NE960R500
Supplying Form
ESD protective envelope
NE961R500
75
NE960R575
NE962R575
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14387EJ1V0DS00 (1st edition)
Date Published July 1999 N CP(K)
Printed in Japan
©
1999
NE960R5 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Symbol
Ratings
Unit
VDS
15
V
Note 1
–7 (−9
VGSO
)
V
Drain Current
ID
0.7
A
Gate Forward Current
IGF
+5.0
mA
Gate Reverse Current
IGR
–5.0
mA
Note 2
Total Power Dissipation
PT
5.0 (4.2
)
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
W
Notes 1. NE962R575
2. NE961R500
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Drain to Source Voltage
Gain Compression
Channel Temperature
Test Condition
MIN.
TYP.
MAX.
Unit
VDS
−
9.0
9.0
V
Gcomp
−
−
3.0
dB
Tch
−
−
+130
°C
MIN.
TYP.
MAX.
Unit
ELECTRICAL CHARACTERISTICS
(TA = +25°°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Saturated Drain Current
Pinch-off Voltage
Test Conditions
IDSS
VDS = 1.5 V, VGS = 0 V
0.18
0.4
0.7
A
Vp
VDS = 2.5 V, ID = 2 mA
–2.5
–1.8
–0.5
V
Gate to Drain Break Down Voltage
BVgd
Igd = 2 mA
15
−
−
V
Gate to Source Break Down
Note 2
Voltage
BVgs
Igs = 2 mA
9.0
−
−
V
−
−
30 (35
25.5
26.5
−
dBm
−
27.5
−
dBm
η add
−
30
−
%
GL
8.0
9.0
−
dB
Note 1
Thermal Resistance
Rth
Channel to Case
Output Power at Pin = +19 dBm
Pout
f = 14.5 GHz, VDS = 9.0 V
Rg = 1 kΩ
IDset = 180 mA (RF OFF)
Output Power at 1 dB Gain
Note 1
Compression Point
Po (1 dB)
Note 1
Power Added Efficiency at Po (1dB)
Note 1
Linear Gain
Notes 1. Except NE962R575
2. NE962R575 only
3. NE961R500
Remark DC and RF performance is 100 % testing.
2
Preliminary Data Sheet P14387EJ1V0DS00
Note 3
)
°C/W
NE960R5 SERIES
TYPICAL CHARACTERISTICS (TA = +25°°C)
60
25
45
20
30
15
15
Power Added Efficiency ηadd (%)
Output Power Pout (dBm)
OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER
30
f = 14.5 GHz (1 tone),
VDS = 9 V, IDset = 180 mA
Rg = 1 kΩ
10
0
5
10
15
Input Power Pin (dBm)
20
25
12
250
10
200
8
150
6
Gain (dB)
Drain Current ID (mA)
DRAIN CURRENT AND GAIN vs. INPUT POWER
300
4
100
5
10
15
Input Power Pin (dBm)
20
25
GATE CURRENT vs. INPUT POWER
Gate Current Ig (mA)
1.5
1.0
0.5
0.0
0.5
5
10
15
20
25
Input Power Pin (dBm)
Preliminary Data Sheet P14387EJ1V0DS00
3
NE960R5 SERIES
TYPICAL S-PARAMETER
[NE960R575]
TEST CONDITIONS: VDS = 9 V, IDset = 180 mA
FREQUENCY
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
MAG.
S11
ANG. (deg.)
0.87
0.84
0.84
0.82
0.81
0.79
0.73
0.69
0.62
0.63
0.76
0.79
0.87
0.87
0.83
S21
ANG. (deg.)
MAG.
–140
–154
–160
–163
–167
–175
171
147
109
47
0
–21
–45
–53
–60
4.36
2.98
2.36
2.08
1.99
1.96
2.02
2.20
2.30
2.22
1.62
1.30
0.90
0.60
0.43
S12
ANG. (deg.)
MAG.
85
68
54
42
33
18
1
–20
–51
–88
–124
–144
–172
166
150
0.042
0.040
0.040
0.043
0.047
0.055
0.066
0.076
0.083
0.063
0.032
0.017
0.022
0.034
0.037
MAG.
23
19
22
32
34
35
30
18
–4
–41
–82
–141
128
101
82
0.23
0.25
0.30
0.32
0.34
0.36
0.36
0.37
0.38
0.45
0.57
0.61
0.66
0.73
0.75
START 2 GHz, STOP 16 GHz, STEP 1 GHz
S11
S12
1.0
+90°
2.0
0.5
+135°
+45°
16 GHz
0.5
0
1.0
2.0
∞
2 GHz
±180°
0°
2 GHz
16 GHz
–45°
–135°
–2.0
–0.5
–1.0
–90°
Rmax. = 0.1
Rmax. = 1
S22
+90°
1.0
2 GHz
+135°
±180°
S21
16 GHz
2.0
0.5
+45°
0°
0
0.5
1.0
2.0
16 GHz
∞
2 GHz
–45°
–135°
–90°
4
–2.0
–0.5
Rmax. = 5
Preliminary Data Sheet P14387EJ1V0DS00
–1.0
Rmax. = 1
S22
ANG. (deg.)
–131
–143
–149
–154
–160
–168
178
159
136
95
65
49
27
11
–2
NE960R5 SERIES
[NE960R500]
TEST CONDITIONS: VDS = 9 V, IDset = 180 mA
FREQUENCY
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
MAG.
0.87
0.85
0.85
0.86
0.86
0.85
0.84
0.85
0.86
0.86
0.85
0.85
0.87
0.86
0.87
0.87
0.87
S11
ANG. (deg.)
−132
−146
−155
−158
−161
−162
−163
−165
−170
−174
179
172
172
170
167
167
163
MAG.
6.53
4.06
2.74
2.24
1.89
1.62
1.32
1.24
1.12
1.04
0.94
0.83
0.65
0.60
0.57
0.54
0.40
S21
ANG. (deg.)
160
−168
−148
−121
−93
−66
−40
−11
16
43
64
86
114
152
−178
−150
−122
MAG.
S12
ANG. (deg.)
0.038
0.037
0.038
0.038
0.037
0.033
0.032
0.039
0.032
0.032
0.041
0.025
0.038
0.028
0.032
0.032
0.045
90
120
155
−177
−137
−109
−64
−35
5
47
78
108
153
171
−142
−98
−80
MAG.
0.23
0.25
0.29
0.34
0.39
0.44
0.48
0.53
0.56
0.58
0.61
0.63
0.65
0.65
0.68
0.67
0.67
S22
ANG. (deg.)
−105
−118
−124
−131
−133
−135
−137
−138
−139
−142
−146
−149
−153
−157
−159
−164
−175
Caution S-parameters include bond wires.
Gate
: Total 2 wires, 1 per bond pad, 300 µm long each wire.
Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire.
Source : No bond wires.
Wire
: 25 µm diameter, gold.
Preliminary Data Sheet P14387EJ1V0DS00
5
NE960R5 SERIES
[NE961R500]
TEST CONDITIONS: VDS = 9 V, IDset = 180 mA
FREQUENCY
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
MAG.
0.81
0.79
0.78
0.79
0.78
0.77
0.76
0.76
0.76
0.77
0.77
0.79
0.81
0.81
0.81
0.80
0.81
S11
ANG. (deg.)
−134
−149
−159
−164
−168
−168
−171
−175
178
171
164
160
155
153
151
148
144
MAG.
6.37
3.73
2.64
2.18
1.83
1.58
1.32
1.24
1.14
1.03
0.94
0.87
0.69
0.68
0.64
0.62
0.47
S21
ANG. (deg.)
163
−170
−151
−125
−97
−69
−43
−14
13
40
65
89
116
153
−176
−149
−114
MAG.
S12
ANG. (deg.)
0.040
0.042
0.047
0.053
0.060
0.061
0.072
0.098
0.097
0.112
0.153
0.111
0.189
0.145
0.192
0.205
0.267
Caution S-parameters include bond wires.
Gate
: Total 2 wires, 1 per bond pad, 300 µm long each wire.
Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire.
Source : Total 4 wires, 1 per bond pad, 300 µm long each wire.
Wire
6
: 25 µm diameter, gold.
Preliminary Data Sheet P14387EJ1V0DS00
105
140
−176
−140
−99
−67
−18
6
49
85
113
146
−178
−161
−119
−81
−69
MAG.
0.17
0.18
0.20
0.24
0.29
0.34
0.38
0.43
0.47
0.50
0.53
0.56
0.57
0.58
0.58
0.58
0.58
S22
ANG. (deg.)
−90
−107
−118
−127
−132
−136
−138
−139
−139
−141
−145
−149
−156
−161
−166
−174
175
NE960R5 SERIES
PACKAGE DIMENSIONS
3.0 MIN.
PACKAGE CODE-75 (Unit: mm)
Gate
3.0 MIN.
2.3
2.7
0.5
φ 1.8
Drain
2.7
7.0
2.3
1.13
0.9 MAX.
9.8 MAX.
PHYSICAL DIMENSIONS
NE960R500 (CHIP) (Unit: µm)
NE961R500 (CHIP) (Unit: µm)
990
1000
223
228
544
G
200
90
G
305
200
Remark Chip thickness: 100 µm
G
Source
110 85
105 85
Source
580
Drain
570
Drain
228
100 105
544
100 100
223
90
310
Remark Chip thickness: 140 µm
G
: Gate
: Gate
Source is grounded through via hole.
Preliminary Data Sheet P14387EJ1V0DS00
7
NE960R5 SERIES
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Partial Heating
Soldering Conditions
Recommended Condition Symbol
Pin temperature: 260°C
Time: 5 seconds or less (per pin row)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300 ±10°C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 to 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280°C_5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
8
Preliminary Data Sheet P14387EJ1V0DS00
NE960R5 SERIES
[MEMO]
Preliminary Data Sheet P14387EJ1V0DS00
9
NE960R5 SERIES
[MEMO]
10
Preliminary Data Sheet P14387EJ1V0DS00
NE960R5 SERIES
[MEMO]
Preliminary Data Sheet P14387EJ1V0DS00
11
NE960R5 SERIES
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8