H CAT28F010 EE GEN FR ALO 1 Megabit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES ■ Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max (CMOS/TTL levels) –Standby: 1 mA max (TTL levels) –Standby: 100 µA max (CMOS levels) ■ JEDEC standard pinouts: –32-pin DIP –32-pin PLCC –32-pin TSOP (8 x 20) ■ High speed programming: –10 µs per byte –2 Sec Typ Chip Program ■ 100,000 program/erase cycles ■ 0.5 seconds typical chip-erase ■ 12.0V ■ 10 year data retention ± 5% programming and erase voltage ■ Electronic signature ■ Stop timer for program/erase DESCRIPTION using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation. The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. The CAT28F010 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages. It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, I/O0–I/O7 BLOCK DIAGRAM I/O BUFFERS ERASE VOLTAGE SWITCH WE COMMAND REGISTER PROGRAM VOLTAGE SWITCH CE, OE LOGIC DATA LATCH SENSE AMP CE ADDRESS LATCH OE A0–A16 Y-GATING Y-DECODER X-DECODER 1,048,576 BIT MEMORY ARRAY VOLTAGE VERIFY SWITCH © 2004 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 1019, Rev. D CAT28F010 PIN CONFIGURATION PIN FUNCTIONS DIP Package (P, L) VCC 31 30 WE N/C A12 4 5 29 28 A14 A13 6 7 27 26 A8 A5 A4 A3 8 9 25 24 A2 10 11 12 13 A1 A0 I/O0 14 15 VSS 16 4 3 2 1 32 31 30 A7 5 29 A14 23 22 A10 A6 A5 28 27 26 A13 A8 9 25 21 20 19 I/O7 I/O6 I/O5 A4 A3 A2 6 7 8 10 11 24 23 12 22 18 I/O4 I/O3 17 A1 A0 I/O0 13 21 14 15 16 17 18 19 20 I/O1 I/O2 I/O1 I/O2 A0–A16 Input Address Inputs for memory addressing I/O0–I/O7 A9 A11 OE CE Function A9 A11 OE A10 CE I/O7 I/O Data Input/Output CE Input Chip Enable OE Input Output Enable WE Input Write Enable VCC Voltage Supply VSS Ground VPP Program/Erase Voltage Supply I/O5 I/O6 A6 VSS I/O3 I/O4 A7 Type PLCC Package (N, G) WE N/C 32 2 3 A16 VPP VCC 1 A16 A15 A12 A15 VPP Pin Name TSOP Package (Standard Pinout 8mm x 20mm) (T, H) A11 A9 A8 A13 A14 NC WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 NC WE VCC VPP A16 A15 A12 A7 A6 A5 A4 TSOP Package (Reverse Pinout) (TR, HR) OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 Doc. No. 1019, Rev. D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 2 CAT28F010 ABSOLUTE MAXIMUM RATINGS* *COMMENT Temperature Under Bias .................... -55°C to +95°C Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Storage Temperature ........................ -65°C to +150°C Voltage on Any Pin with Respect to Ground(1) ............ -2.0V to +VCC + 2.0V Voltage on Pin A9 with Respect to Ground(1) .................... -2.0V to +13.5V VPP with Respect to Ground during Program/Erase(1) ............... -2.0V to +14.0V VCC with Respect to Ground(1) ............. -2.0V to +7.0V Package Power Dissipation Capability (TA = 25°C) .................................. 1.0 W Lead Soldering Temperature (10 secs) ............ 300°C Output Short Circuit Current(2) ........................ 100 mA RELIABILITY CHARACTERISTICS Symbol NEND (3) Parameter Endurance Min Max Units Test Method 100K Cycles/Byte MIL-STD-883, Test Method 1033 10 Years MIL-STD-883, Test Method 1008 MIL-STD-883, Test Method 3015 TDR(3) Data Retention VZAP(3) ESD Susceptibility 2000 Volts ILTH(3)(4) Latch-Up 100 mA JEDEC Standard 17 CAPACITANCE TA = 25°C, f = 1.0 MHz Limits Symbol CIN (3) COUT(3) CVPP (3) Test Min Max. Units Conditions Input Pin Capacitance 6 pF VIN = 0V Output Pin Capacitance 10 pF VOUT = 0V VPP Supply Capacitance 25 pF VPP = 0V Note: (1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns. (2) Output shorted for no more than one second. No more than one output shorted at a time. (3) This parameter is tested initially and after a design or process change that affects the parameter. (4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V. 3 Doc. No. 1019, Rev. D CAT28F010 D.C. OPERATING CHARACTERISTICS VCC = +5V ±10%, unless otherwise specified. Limits Symbol Parameter Min. Max. Unit Test Conditions ILI Input Leakage Current ±1 µA VIN = VCC or VSS VCC = 5.5V, OE = VIH ILO Output Leakage Current ±1 µA VOUT = VCC or VSS, VCC = 5.5V, OE = VIH ISB1 VCC Standby Current CMOS 100 µA CE = VCC ±0.5V, VCC = 5.5V ISB2 VCC Standby Current TTL 1 mA CE = VIH, VCC = 5.5V ICC1 VCC Active Read Current 30 mA VCC = 5.5V, CE = VIL, IOUT = 0mA, f = 6 MHz ICC2(1) VCC Programming Current 15 mA VCC = 5.5V, Programming in Progress ICC3(1) VCC Erase Current 15 mA VCC = 5.5V, Erasure in Progress ICC4(1) VCC Prog./Erase Verify Current 15 mA VCC = 5.5V, Program or Erase Verify in Progress IPPS VPP Standby Current ±10 µA VPP = VPPL IPP1 VPP Read Current 200 µA VPP = VPPH VPP Programming Current 30 mA VPP = VPPH, Programming in Progress IPP3(1) VPP Erase Current 30 mA VPP = VPPH, Erasure in Progress IPP4(1) VPP Prog./Erase Verify Current 5 mA VPP = VPPH, Program or Erase Verify in Progress VIL Input Low Level TTL –0.5 0.8 V VILC Input Low Level CMOS –0.5 0.8 V VOL Output Low Level 0.45 V VIH Input High Level TTL 2 VCC+0.5 V VIHC Input High Level CMOS VCC*0.7 VCC+0.5 V VOH1 Output High Level TTL 2.4 V IOH = –2.5mA, VCC = 4.5V VOH2 Output High Level CMOS VCC–0.4 V IOH = –400µA, VCC = 4.5V VID A9 Signature Voltage 13 V A9 = VID IID(1) A9 Signature Current 200 µA A9 = VID VLO VCC Erase/Prog. Lockout Voltage IPP2 (1) 11.4 2.5 V Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. Doc. No. 1019, Rev. D 4 IOL = 5.8mA, VCC = 4.5V CAT28F010 SUPPLY CHARACTERISTICS Limits Symbol Parameter VCC VCC Supply Voltage VPPL VPP During Read Operations VPPH VPP During Read/Erase/Program Min Max. Unit 4.5 5.5 V 0 6.5 V 11.4 12.6 V 28F010-90(7) 28F010-12(7) A.C. CHARACTERISTICS, Read Operation VCC = +5V ±10%, unless otherwise specified. JEDEC Standard Symbol Symbol Parameter Min Max Max tRC Read Cycle Time tELQV tCE CE Access Time 90 120 ns tAVQV tACC Address Access Time 90 120 ns tGLQV tOE OE Access Time 35 50 ns tAXQX tOH Output Hold from Address OE/CE Change 0 0 ns tGLQX tOLZ(1)(6) tLZ(1)(6) tDF(1)(2) tDF(1)(2) OE to Output in Low-Z 0 0 ns CE to Output in Low-Z 0 0 ns tGHQZ tEHQZ tWHGL(1) - 120 Unit tAVAV tELZX 90 Min ns OE High to Output High-Z 20 30 ns CE High to Output High-Z 30 40 ns Write Recovery Time Before Read 6 6 µs Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5) 2.4 V 2.0 V INPUT PULSE LEVELS REFERENCE POINTS 0.8 V 0.45 V 5108 FHD F03 Testing Load Circuit (example) 1.3V 1N914 3.3K DEVICE UNDER TEST OUT CL = 100 pF CL INCLUDES JIG CAPACITANCE 5108 FHD F04 Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer. (3) Input Rise and Fall Times (10% to 90%) < 10 ns. (4) Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V. (5) Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V. (6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid. (7) For load and reference points, see Fig. 1 5 Doc. No. 1019, Rev. D CAT28F010 A.C. CHARACTERISTICS, Program/Erase Operation VCC = +5V ±10%, unless otherwise specified. \JEDEC Standard Symbol Symbol tAVAV tWC Write Cycle Time 90 120 ns tAVWL tAS Address Setup Time 0 0 ns tWLAX tAH Address Hold Time 40 40 ns tDVWH tDS Data Setup Time 40 40 ns tWHDX tDH Data Hold Time 10 10 ns tELWL tCS CE Setup Time 0 0 ns tWHEH tCH CE Hold Time 0 0 ns tWLWH tWP WE Pulse Width 40 40 ns tWHWL tWPH WE High Pulse Width 20 20 ns tWHWH1(2) tWHWH2(2) - Program Pulse Width 10 10 µs - Erase Pulse Width 9.5 9.5 ms - Write Recovery Time Before Read 6 6 µs - Read Recovery Time Before Write 0 0 µs - VPP Setup Time to CE 100 100 ns tWHGL tGHWL tVPEL 28F010-90 Parameter Min Typ 28F010-12 Max Min Typ Max Unit ERASE AND PROGRAMMING PERFORMANCE (1) 28F010-90 Parameter Min Chip Erase Time (3)(5) Chip Program Time (3)(4) 28F010-12 Typ Max 0.5 2 Min Typ Max Unit 10 0.5 10 Sec 12.5 2 12.5 Sec Note: (1) Please refer to Supply characteristics for the value of VPPH and VPPL. The VPP supply can be either hardwired or switched. If VPP is switched, VPPL can be ground, less than VCC + 2.0V or a no connect with a resistor tied to ground. (2) Program and Erase operations are controlled by internal stop timers. (3) ‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25°C, 12.0V VPP. (4) Minimum byte programming time (excluding system overhead) is 16 µs (10 µs program + 6 µs write recovery), while maximum is 400 µs/ byte (16 µs x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case byte. (5) Excludes 00H Programming prior to Erasure. Doc. No. 1019, Rev. D 6 CAT28F010 FUNCTION TABLE(1) Pins Mode CE OE WE VPP I/O Notes Read VIL VIL VIH VPPL DOUT Output Disable VIL VIH VIH X High-Z Standby VIH X X VPPL High-Z Signature (MFG) VIL VIL VIH X 31H A0 = VIL, A9 = 12V Signature (Device) VIL VIL VIH X B4H A0 = VIH, A9 = 12V Program/Erase VIL VIH VIL VPPH DIN See Command Table Write Cycle VIL VIH VIL VPPH DIN During Write Cycle Read Cycle VIL VIL VIH VPPH DOUT During Write Cycle WRITE COMMAND TABLE Commands are written into the command register in one or two write cycles. The command register can be altered only when VPP is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch addresses and data required for programming and erase operations. Pins First Bus Cycle Mode Second Bus Cycle Operation Address DIN Operation Address DIN DOUT Set Read Write X 00H Read AIN DOUT Read Sig. (MFG) Write X 90H Read 00 31H Read Sig. (Device) Write X 90H Read 01 B4H Erase Write X 20H Write X Erase Verify Write AIN A0H Read X Program Write X 40H Write AIN Program Verify Write X C0H Read X Reset Write X FFH Write X 20H DOUT DIN DOUT FFH Note: (1) Logic Levels: X = Logic ‘Do not care’ (VIH, VIL, VPPL, VPPH) 7 Doc. No. 1019, Rev. D CAT28F010 READ OPERATIONS Read Mode The conventional mode is entered as a regular READ mode by driving the CE and OE pins low (with WE high), and applying the required high voltage on address pin A9 while all other address lines are held at VIL. A Read operation is performed with both CE and OE low and with WE high. VPP can be either high or low, however, if VPP is high, the Set READ command has to be sent before reading data (see Write Operations). The data retrieved from the I/O pins reflects the contents of the memory location corresponding to the state of the 17 address pins. The respective timing waveforms for the read operation are shown in Figure 3. Refer to the AC Read characteristics for specific timing parameters. A Read cycle from address 0000H retrieves the binary code for the IC manufacturer on outputs I/O0 to I/O7: CATALYST Code = 00110001 (31H) A Read cycle from address 0001H retrieves the binary code for the device on outputs I/O0 to I/O7. Signature Mode The signature mode allows the user to identify the IC manufacturer and the type of device while the device resides in the target system. This mode can be activated in either of two ways; through the conventional method of applying a high voltage (12V) to address pin A9 or by sending an instruction to the command register (see Write Operations). 28F010 Code = 1011 0100 (B4H) Standby Mode With CE at a logic-high level, the CAT28F010 is placed in a standby mode where most of the device circuitry is disabled, thereby substantially reducing power consumption. The outputs are placed in a high-impedance state. Figure 3. A.C. Timing for Read Operation POWER UP STANDBY DEVICE AND ADDRESS SELECTION ADDRESSES OUPUTS ENABLED DATA VALID STANDBY POWER DOWN ADDRESS STABLE tAVAV (tRC) CE (E) tEHQZt(DF) OE (G) tWHGL tGHQZ (tDF) tGLQV (tOE) WE (W) tELQV (tCE) tGLQX (tOLZ) tELQX (tLZ) tAXQXt(OH) HIGH-Z HIGH-Z DATA (I/O) OUTPUT VALID tAVQV (tACC) Doc. No. 1019, Rev. D 8 28F010 F05 CAT28F010 Signature Mode WRITE OPERATIONS An alternative method for reading device signature (see Read Operations Signature Mode), is initiated by writing the code 90H into the command register while keeping VPP high. A read cycle from address 0000H with CE and OE low (and WE high) will output the device signature. The following operations are initiated by observing the sequence specified in the Write Command Table. Read Mode The device can be put into a standard READ mode by initiating a write cycle with 00H on the data bus. The subsequent read cycles will be performed similar to a standard EPROM or E2PROM Read. CATALYST Code = 00110001 (31H) A Read cycle from address 0001H retrieves the binary code for the device on outputs I/O0 to I/O7. 28F010 Code = 1011 0100 (B4H) Figure 4. A.C. Timing for Erase Operation VCC POWER-UP & STANDBY SETUP ERASE COMMAND ERASE COMMAND ERASING ERASE VERIFY COMMAND ERASE VCC POWER-DOWN/ VERIFICATION STANDBY ADDRESSES tWC tWC tWC tAS tRC tAH CE (E) tCH tCS tCH tCS tCH tEHQZ OE (G) tGHWL tWHWH2 tWPH tDF tWHGL WE (W) tWP tDS HIGH-Z DATA IN = 20H DATA (I/O) tDH tDS tWP tDH tWP tDS tDH tOE DATA IN = A0H DATA IN = 20H tLZ tCE VCC VALID DATA OUT 5.0V 0V VPP tOH tOLZ tVPEL VPPH VPPL 28F010 F11 9 Doc. No. 1019, Rev. D CAT28F010 Figure 5. Chip Erase Algorithm(1) BUS OPERATION COMMAND START ERASURE COMMENTS VPP RAMPS TO VPPH (OR VPP HARDWIRED) APPLY VPPH PROGRAM ALL BYTES TO 00H ALL BYTES SHALL BE PROGRAMMED TO 00 BEFORE AN ERASE OPERATION STANDBY INITIALIZE ADDRESS INITIALIZE ADDRESS INITIALIZE PLSCNT = 0 PLSCNT = PULSE COUNT WRITE ERASE SETUP COMMAND WRITE ERASE ACTUAL ERASE NEEDS 10ms PULSE, DATA = 20H DATA = 20H WRITE ERASE COMMAND WRITE ERASE DATA = 20H WAIT TIME OUT 10ms WRITE ERASE VERIFY COMMAND WRITE ERASE VERIFY TIME OUT 6 s ADDRESS = BYTE TO VERIFY 40H; DATA = 20H; A0H STOPS ERASE OPERATION WAIT INCREMENT ADDRESS READ DATA FROM DEVICE READ READ BYTE TO VERIFY ERASURE STANDBY COMPARE OUTPUT TO FF INCREMENT PULSE COUNT NO DATA = FFH? YES NO NO INC PLSCNT 1000 ? = 3000 YES LAST ADDRESS? YES WRITE READ COMMAND WRITE APPLY VPPL APPLY VPPL ERASURE COMPLETED ERASE ERROR READ STANDBY DATA = 00H RESETS THE REGISTER FOR READ OPERATION VPP RAMPS TO VPPL (OR VPP HARDWIRED) Note: (1) The algorithm MUST BE FOLLOWED to ensure proper and reliable operation of the device. 5108 FHD F10 Doc. No. 1019, Rev. D 10 CAT28F010 Erase Mode Erase-Verify Mode During the first Write cycle, the command 20H is written into the command register. In order to commence the erase operation, the identical command of 20H has to be written again into the register. This two-step process ensures against accidental erasure of the memory contents. The final erase cycle will be stopped at the rising edge of WE, at which time the Erase Verify command (A0H) is sent to the command register. During this cycle, the address to be verified is sent to the address bus and latched when WE goes low. An integrated stop timer allows for automatic timing control over this operation, eliminating the need for a maximum erase timing specification. Refer to AC Characteristics (Program/Erase) for specific timing parameters. The Erase-verify operation is performed on every byte after each erase pulse to verify that the bits have been erased. Programming Mode The programming operation is initiated using the programming algorithm of Figure 7. During the first write cycle, the command 40H is written into the command register. During the second write cycle, the address of the memory location to be programmed is latched on the falling edge of WE, while the data is latched on the rising edge of WE. The program operation terminates with the next rising edge of WE. An integrated stop timer allows for automatic timing control over this operation, eliminating the need for a maximum program timing specification. Refer to AC Characteristics (Program/Erase) for specific timing parameters. Figure 6. A.C. Timing for Programming Operation PROGRAM VCC POWER-UP SETUP PROGRAM LATCH ADDRESS COMMAND & DATA VERIFY & STANDBY PROGRAMMING COMMAND PROGRAM VCC POWER-DOWN/ VERIFICATION STANDBY ADDRESSES tWC tWC tAS tRC tAH CE (E) tCH tCS tCH tCS tCH tEHQZ OE (G) tGHWL tWHWH1 tWPH tDF tWHGL WE (W) tWP tDS HIGH-Z DATA IN = 40H DATA (I/O) tDH tDS tWP tDH tWP tDS tDH tOE DATA IN = C0H DATA IN tLZ tCE VCC VALID DATA OUT 5.0V 0V VPP tOH tOLZ tVPEL VPPH VPPL 28F010 F08 11 Doc. No. 1019, Rev. D CAT28F010 Figure 7. Programming Algorithm(1) START PROGRAMMING BUS OPERATION APPLY VPPH STANDBY COMMAND COMMENTS VPP RAMPS TO VPPH (OR VPP HARDWIRED) INITIALIZE ADDRESS INITIALIZE ADDRESS PLSCNT = 0 INITIALIZE PULSE COUNT PLSCNT = PULSE COUNT WRITE SETUP PROG. COMMAND 1ST WRITE CYCLE WRITE SETUP DATA = 40H WRITE PROG. CMD ADDR AND DATA 2ND WRITE CYCLE PROGRAM VALID ADDRESS AND DATA TIME OUT 10 s WAIT 1ST WRITE CYCLE WRITE PROGRAM VERIFY COMMAND PROGRAM VERIFY TIME OUT 6 s DATA = C0H WAIT READ DATA FROM DEVICE READ READ BYTE TO VERIFY PROGRAMMING STANDBY COMPARE DATA OUTPUT TO DATA EXPECTED NO VERIFY DATA ? YES INCREMENT ADDRESS NO NO INC PLSCNT = 25 ? YES LAST ADDRESS? YES 1ST WRITE CYCLE WRITE READ COMMAND APPLY VPPL APPLY VPPL PROGRAMMING COMPLETED PROGRAM ERROR STANDBY READ DATA = 00H SETS THE REGISTER FOR READ OPERATION VPP RAMPS TO VPPL (OR VPP HARDWIRED) Note: (1) The algorithm MUST BE FOLLOWED to ensure proper and reliable operation of the device. 5108 FHD F06 Doc. No. 1019, Rev. D 12 CAT28F010 Program-Verify Mode POWER UP/DOWN PROTECTION A Program-verify cycle is performed to ensure that all bits have been correctly programmed following each byte programming operation. The specific address is already latched from the write cycle just completed, and stays latched until the verify is completed. The Programverify operation is initiated by writing C0H into the command register. An internal reference generates the necessary high voltages so that the user does not need to modify VCC. Refer to AC Characteristics (Program/ Erase) for specific timing parameters. The CAT28F010 offers protection against inadvertent programming during VPP and VCC power transitions. When powering up the device there is no power-on sequencing necessary. In other words, VPP and VCC may power up in any order. Additionally VPP may be hardwired to VPPH independent of the state of VCC and any power up/down cycling. The internal command register of the CAT28F010 is reset to the Read Mode on power up. Abort/Reset POWER SUPPLY DECOUPLING An Abort/Reset command is available to allow the user to safely abort an erase or program sequence. Two consecutive program cycles with FFH on the data bus will abort an erase or a program operation. The abort/ reset operation can interrupt at any time in a program or erase operation and the device is reset to the Read Mode. To reduce the effect of transient power supply voltage spikes, it is good practice to use a 0.1µF ceramic capacitor between VCC and VSS and VPP and VSS. These high-frequency capacitors should be placed as close as possible to the device for optimum decoupling. Figure 8. Alternate A.C. Timing for Program Operation PROGRAM VCC POWER-UP SETUP PROGRAM LATCH ADDRESS COMMAND & DATA VERIFY & STANDBY PROGRAMMING COMMAND PROGRAM VCC POWER-DOWN/ VERIFICATION STANDBY ADDRESSES tWC tWC tAVEL tRC tELAX WE (W) (E) tWLEL tEHWH tWLEL tEHWH tEHWH tEHQZ tWLEL OE (G) tEHEH tGHEL tEHGL tDF tEHEL CE (E) (W) tDVEH HIGH-Z DATA (I/O) tEHDX tELEH tDVEH DATA IN = 40H tELEH tEHDX tDVEH tOE tEHDX tOLZ DATA IN = C0H DATA IN tLZ tCE VCC VALID DATA OUT 5.0V 0V VPP tOH tVPEL VPPH VPPL 28F010 F10 13 Doc. No. 1019, Rev. D CAT28F010 A.C. CHARACTERISTICS, Read Operation VCC = +5V ±10%, unless otherwise specified. JEDEC Standard Symbol Symbol tAVAV tWC Write Cycle Time 90 120 ns tAVEL tAS Address Setup Time 0 0 ns tELAX tAH Address Hold Time 40 40 ns tDVEH tDS Data Setup Time 40 40 ns tEHDX tDH Data Hold Time 10 10 ns 0 0 µs Before Write 0 0 µs WE Setup time Before CE 0 0 ns WE Hold Time After CE 0 0 ns tEHGL 28F010-90 Parameter Min. Typ 28F010-12 Max Min. Typ Max. Unit Write Recovery Time - tGHEL Before Read Read Recovery Time tWLEL tWS tEHWH - tELEH tCP Write Pulse Width 40 40 ns tEHEL tCPH Write Pulse Width High 20 20 ns tVPEL - VPP Setup Time to CE Low 100 100 ns ORDERING INFORMATION Prefix Device # CAT 28F010 Suffix N Product Number Optional Company ID -90 T I Temperature Range Blank = Commercial (0ßC to +70ßC) I = Industrial (-40ßC to +85ßC) A = Automotive (-40ßC to +105ßC) * Package N: PLCC P: PDIP T: TSOP (8mmx20mm) TR: TSOP (Reverse Pinout) G: PLCC (Lead free, Halogen free) L: PDIP (Lead free, Halogen free) H: TSOP (Lead free, Halogen free) HR: TSOP (Reverse Pinout) (Lead free, Halogen free) Tape & Reel T: 500/Reel Speed 90: 90ns 12: 120ns * -40˚ to +125˚ is available upon request. Note: (1) The device used in the above example is a CAT28F010NI-90T(PLCC, Industrial Temperature, 90 ns access time, Tape & Reel). Doc. No. 1019, Rev. D 14 REVISION HISTORY Date Rev. Reason 7/1/2004 D Added Green Packages in all areas. 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Corporate Headquarters 1250 Borregas Avenue Sunnyvale, CA 94089 Phone: 408.542.1000 Fax: 408.542.1200 www.catalyst-semiconductor.com Publication #: Revison: Issue date: Type: 1019 D 7/1/04 Final