DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D1 D1 S1 TOP VIEW D2 G1 D1 S2 D2 G2 D2 TOP VIEW Internal Schematic G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Symbol VDSS VGSS Units V V IDM Value 20 ±12 7.63 4.92 30 Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Symbol PD RθJA Value 1.16 107.4 Unit W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Steady State TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Repetitive rating, pulse width limited by function temperature. DMN2041LSD Document number: DS31964 Rev. 2 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2041LSD @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.2 28 41 1.2 V Static Drain-Source On-Resistance 19 25 6 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A VGS = 0V, IS = 1.7A Ciss Coss Crss Rg - 550 88 81 1.34 - Total Gate Charge (10V) Qg - 15.6 - Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd tD(on) tr tD(off) tf - 7.2 1.0 1.9 4.69 13.19 22.10 6.43 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Notes: mΩ S V pF Ω nC Test Condition VDS =10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 10V, ID = 6.0A nC VGS = 4.5 V, VDS = 10V, ID = 6.0A ns VDD = 10V, VGEN = 4.5V, Rg = 1Ω, ID = 6.7A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 VGS = 10V VGS = 2.0V 16 VGS = 4.5V VGS = 3.0V VGS = 2.5V 12 8 4 VDS = 5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 12 8 T A = 150°C 4 VGS = 1.5V TA = 125°C T A = 85°C 0 TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2041LSD Document number: DS31964 Rev. 2 - 2 5 T A = 25°C 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 0.05 VGS = 1.8V 0.04 0.03 VGS = 2.5V 0.02 VGS = 10V VGS = 4.5V 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.04 TA = 150°C TA = 125°C TA = 85°C 0.02 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 2.5V ID = 5A 0.6 -50 TA = 25°C TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.0 0.06 20 1.6 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 2.5V ID = 5A 0.02 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature VGS = 4.5V ID = 10A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 20 1.4 16 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN2041LSD 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 TA = 25°C 12 8 4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2041LSD Document number: DS31964 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current October 2009 © Diodes Incorporated 1,000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) DMN2041LSD f = 1MHz C, CAPACITANCE (pF) Coss 100 Crss 10 0 5 10 15 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C TA = -55°C 1 2 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT Ciss 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 111°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMN2041LSD-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo N2041LD Part no. YY WW Xth week: 01~52 Year: “09” = 2009 1 4 ( Top View ) DMN2041LSD Document number: DS31964 Rev. 2 - 2 4 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2041LSD 0.254 NEW PRODUCT Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN2041LSD Document number: DS31964 Rev. 2 - 2 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMN2041LSD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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