DATA SHEET GBJ25005 THRU GBJ2510 SEMICONDUCTOR 25A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES GBJ •Glass Passivated Die Construction •High Case Dielectric Strength of 1500VRMS •Low Reverse Leakage Current •Surge Overload Rating to 350A Peak •Ideal for Printed Circuit Board Applications •Plastic Material - UL Flammability A K Classification 94V-0 •UL Listed Under Recognized Component _ Index, File Number E94661 •High temperature soldering : 260OC / 10 seconds at terminals J •Pb free product at available : 99% Sn above meet RoHS H environment substance directive request B 19.70 20.30 17.00 18.00 M D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 R MECHANICAL DATA G •Case: Molded Plastic E 30.30 C P I Max 29.70 B N C Min A L S D Dim E •Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 •Polarity: Molded on Body 3.0 X 45° K L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm •Mounting: Through Hole for #6 Screw •Mounting Torque: 5.0 in-lbs Maximum •Weight: 6.6 grams (approx) •Marking: Type Number Maximum Ratings and Electrical Characteristics@ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Rectified Output Current @ TC= 110℃ (Note 1) GBJ GBJ GBJ GBJ GBJ GBJ GBJ 25005 2501 2502 2504 2506 2508 2510 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Unit IO 25 A IFSM 240 A VFM 1.1 V Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF =12.5A Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ 10 IR 500 μA I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 510 Typical Junction Capacitance per Element (Note 2) Cj 85 pF R_JC 0.6 ℃/W Tj, TSTG -65 to +150 ℃ Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range A2s Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS GBJ25005 THRU GBJ2510 with heatsink 25 20 15 10 without heatsink 5 Resistive or Inductive load 0 25 50 75 100 125 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 30 150 Tj = 25°C 10 1.0 0.1 Pulse width = 300µs 0.01 0 1.2 1.6 2.0 TJ = 25°C f = 1MHz Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 1000 Single half-sine-wave (JEDEC method) 400 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve Tj = 25°C 300 200 100 100 0 1 1 100 10 10 1.0 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 1000 Tj = 150°C Tj = 125°C 100 Tj = 100°C 10 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics http://www.yeashin.com 2 REV.02 20120305