Preliminary Technical Information IXTH48N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 650V = 48A 65m TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 48 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA TC = 25C 20 A TC = 25C 1.5 J dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 660 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight 6 g S G = Gate S = Source EAS TJ D D (Tab) D = Drain Tab = Drain Features International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 200 A 65 m DS100676A(01/16) IXTH48N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 24 RGi Gate Input Resistance 40 S 1.2 D A A2 A2 + R 4300 pF 3280 pF 6.4 pF 150 665 pF pF 19 ns 26 ns 50 ns 15 ns 76 nC 22 nC 28 nC Crss S D2 + D1 D VGS = 0V, VDS = 25V, f = 1MHz A + 0K M D B M 0P O B E Q Ciss Coss TO-247 (IXTH) Outline 0P1 1 2 3 4 ixys option L1 C E1 L Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source 0.19 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 48 A Repetitive, pulse Width Limited by TJM 192 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 24A, -di/dt = 100A/μs 400 6 30 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTH48N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 140 48 VGS = 10V 8V VGS = 10V 9V 120 40 100 7V 8V I D - Amperes I D - Amperes 32 24 80 60 7V 6V 16 40 8 6V 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 0 3 5 10 VDS - Volts 15 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 48 3.4 VGS = 10V 8V VGS = 10V 3.0 40 2.6 RDS(on) - Normalized 7V I D - Amperes 32 6V 24 16 I D = 48A 2.2 1.8 I D = 24A 1.4 1.0 8 5V 0.6 0.2 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 1.2 150 VGS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 100 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.5 0.6 0 20 40 60 80 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH48N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 56 90 80 48 70 40 I D - Amperes I D - Amperes 60 32 24 TJ = 125ºC 25ºC - 40ºC 50 40 30 16 20 8 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 80 160 TJ = - 40ºC 70 140 60 120 50 I S - Amperes g f s - Siemens 25ºC 125ºC 40 30 100 80 TJ = 125ºC 60 TJ = 25ºC 20 40 10 20 0 0 0 10 20 30 40 50 60 70 80 0.3 90 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V Capacitance - PicoFarads I D = 24A 8 VGS - Volts I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTH48N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 35 1000 RDS(on) Limit 100 25 25µs I D - Amperes E OSS - MicroJoules 30 20 15 100µs 10 10 1 TJ = 150ºC TC = 25ºC Single Pulse 5 1ms 10ms 0 0.1 0 100 200 300 400 500 600 10 Fig. 15. Maximum Transient Thermal Impedance VDS - Volts 1 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_48N65X2 (X6-S602) 1-06-16