FDMA1023PZ Dual P-Channel PowerTrench® MOSFET –20V, –3.7A, 72mΩ Features General Description Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. RoHS Compliant Pin 1 S1 D1 MicroFET 2X2 D1 G1 D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 S2 G2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed TJ, TSTG Units V ±8 V –3.7 –6 Power Dissipation PD Ratings –20 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 1.5 0.7 –55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1c) 69 RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1d) 151 °C/W Package Marking and Ordering Information Device Marking 023 Device FDMA1023PZ ©2007 Fairchild Semiconductor Corporation FDMA1023PZ Rev.B Package MicroFET 2X2 1 Reel Size 7” Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET March 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient –20 V ID = –250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 μA IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V ±10 μA –1.5 V mV/°C –11 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250μA, referenced to 25°C 2.5 VGS = –4.5V, ID = –3.7A 60 VGS = –2.5V, ID = –3.2A 75 95 VGS = –1.8V, ID = –2.0A 100 130 VGS = –1.5V, ID = –1.0A 130 195 VGS = –4.5V, ID = –3.7A,TJ =125°C 81 91 VDS = –5V, ID = –3.7A 12 rDS(on) gFS Static Drain to Source On-Resistance Forward Transconductance –0.4 –0.7 mV/°C 72 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 490 655 pF 100 135 pF 90 135 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω VDD = –10V, ID = –3.7A VGS = –4.5V 9 18 ns 12 22 ns 64 103 ns 37 60 ns 8.6 12 nC 0.7 nC 2.0 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge FDMA1023PZ Rev.B VGS = 0V, IS = –1.1A –1.1 (Note 2) IF = –3.7A, di/dt = 100A/μs 2 A –0.8 –1.2 V 32 48 ns 15 23 nC www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) RθJA = 151oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)69oC/W when mounted on a 1in2 pad of 2 oz copper. d)151oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% FDMA1023PZ Rev.B 3 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 6 VGS = -4.5V VGS = -3.0V VGS = -2.5V 5 VGS = -2.0V VGS = -1.8V 4 3 VGS = -1.5V 2 1 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0 0.0 0.5 1.0 1.5 2.6 VGS = -1.5V 2.2 VGS = -1.8V 1.8 VGS = -2.0V VGS = -2.5V 1.4 VGS = -3.0V 1.0 0.6 0 2.0 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 6 -IS, REVERSE DRAIN CURRENT (A) VDD= -5V 4 3 TJ = 125oC TJ = 25oC 1 TJ = -55oC 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = 125oC 80 TJ = 25oC 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 10 VGS = 0V 1 TJ = 125oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.001 0.0 2.0 Figure 5. Transfer Characteristics FDMA1023PZ Rev.B 120 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0 0.0 160 0 6 2 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX ID = -1.85A 40 150 Figure 3. Normalized On-Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 5 200 ID = -3.7A VGS = -4.5V 1.4 5 2 3 4 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics VGS = -4.5V PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -3.7A Ciss CAPACITANCE (pF) 4 VDD = -5V 3 VDD = -10V 2 VDD = -15V 1 100 f = 1MHz VGS = 0V 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 40 0.1 10 20 10 rDS(on) LIMIT 100us 1ms 1 10ms VGS=-4.5V 0.1 100ms 1s 10s DC SINGLE PULSE o =173 R θJA C/W TA = 25oC 0.01 0.1 1 60 10 Crss 20 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics P(PK), PEAK TRANSIENT POWER (W) Figure 7. Gate Charge Characteristics -ID, DRAIN CURRENT (A) Coss 100 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 150 – T A -----------------------125 I = I25 TA = 25oC SINGLE PULSE o RθJA = 173 C/W 1 o TA=25 C 0.5 -4 10 -3 10 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area SINGLE PULSE -2 -1 0 1 2 10 10 10 10 t, PULSE WIDTH (s) 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDMA1023PZ Rev.B 5 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA1023PZ Dual P-Channel PowerTrench® MOSFET www.fairchildsemi.com 6 FDMA1023PZ Rev.B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Definition Rev. I24 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET tm