CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTD3D5N04E3 BVDSS ID @ VGS=10V, TC=25°C 40V RDSON(TYP) @ VGS=10V, ID=75A 140A 3.1mΩ RDSON(TYP) @ VGS=4.5V, ID=20A 5.0mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline TO-220 MTD3D5N04E3 G：Gate D：Drain S：Source GDS Ordering Information Device MTD3D5N04E3-0-UB-S Package Shipping TO-220 50 pcs/tube, 20 tubes/box, 4 boxes / carton (Pb-free lead plating package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTD3D5N04E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) Pulsed Drain Current Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=1mH, ID=32A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS 40 ±20 140 99 75 560 14.9 11.9 32 512 20 200 100 2 1.3 -55~+175 (Note 4) ID (Note 4) (Note 1) IDM (Note 3) (Note 2) IDSM (Note 2) IAS EAS EAR (Note 3) (Note 2) (Note 3) (Note 1) PD (Note 1) (Note 2) PDSM (Note 2) Tj, Tstg Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c (Note 1) (Note 1) Rth,j-a Value 0.75 15 62.5 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. Calculated continuous drain current based on maximum allowable junction temperature. 5. The maximum current limited by package is 75A. 6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTD3D5N04E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 3/8 Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Min. Typ. Max. 40 1.5 - 46 3.1 5.0 2.5 ±100 1 10 4.0 6.5 68.3 13.2 23.1 22.2 20.2 55.6 11.8 2992 375 228 - 0.91 19 11 140 560 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *IS *VSD *trr *Qrr - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20V VDS =40V, VGS =0V VDS =40V, VGS =0V, Tj=55°C VGS =10V, ID=75A VGS =4.5V, ID=20A nC ID=95A, VDS=32V, VGS=10V ns VDS=20V, ID=95A, VGS=10V, RG=2.5Ω pF VGS=0V, VDS=25V, f=1MHz A (Silicon limit) V ns nC IS=75A, VGS=0V IF=95A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTD3D5N04E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current (A) 250 BVDSS, Normalized Drain-Source Breakdown Voltage 300 VGS=6V 200 10V,9V,8V,7V VGS=5V 150 100 VGS=4.5V 50 VGS=4V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 100 10 VGS=4.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=0V VGS=10V 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 10 20 30 40 50 60 70 80 IDR , Reverse Drain Current(A) 90 100 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 10 ID=75A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 8 6 4 2 2.5 VGS=10V, ID=75A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 3.1mΩ typ. 0 0 0 MTD3D5N04E3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 100 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Gate Charge Characteristics 100 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=5V 0.1 Ta=25°C Pulsed 8 VDS=20V 6 VDS=32V 4 2 ID=95A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 50 60 Qg, Total Gate Charge(nC) 70 80 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 160 1000 ID, Maximum Drain Current(A) 100μ s RDSON Limited ID, Drain Current(A) 0 1ms 10ms 100 100ms 1s 10 DC 1 TC=25°C, Tj=175°C VGS=10V, θ JC=0.75°C/W Single Pulse 140 Silicon limit 120 100 80 Package limit 60 40 VGS=10V, RθJC=0.75°C/W 20 0 0.1 0.1 MTD3D5N04E3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 6/8 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 3000 300 250 TJ(MAX) =175°C TC=25°C θ JC=0.75°C/W 2400 2100 200 Power (W) ID, Drain Current(A) 2700 VDS=10V 150 100 1800 1500 1200 900 600 50 300 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=0.75°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTD3D5N04E3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD3D5N04E3 CYStek Product Specification Spec. No. : C140E3 Issued Date : 2015.04.23 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name Date Code D3D5 N04 □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7/500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD3D5N04E3 CYStek Product Specification