FR3AF THRU FR3MF SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts SMAF FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds at terminals Glass passivated chip junction Cathode Band Top View 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.144(3.65) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) Forward Current - 3.0 Ampere 0.047(1.20) 0.028(0.70) MECHANICAL DATA 0.189(4.80) 0.173(4.40) Dimensions in inches and (millimeters) Case: JEDEC SMAF molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0018 ounce, 0.064 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=90 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS VRRM VRMS VDC FR3AF FR3BF FR3DF FR3GF FR3JF FR3KF FR3MF 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 3.0 Amp IFSM 100.0 Amps VF 1.3 Volts IR 5.0 200.0 µA trr CJ RθJA TJ,TSTG 150 250 60.0 20.0 -50 to +150 500 ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES FR3AF THRU FR3MF Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 Single phase half-wave 60 Hz resistive or inductive load 0.6 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Fig.3 Typical Instaneous Forward Characteristics 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance 10 Junction Capacitance ( pF) Instaneous Forward Current (A) 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 1000 100 T J =25°C 10 0.01 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 20 00 1 10 100 Number of Cycles ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ