MBR20H100CT, MBRB20H100CT, MBRF20H100CT SWITCHMODE™ Power Rectifier 100 V, 20 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS Features and Benefits • • • • • • • Low Forward Voltage: 0.64 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Pb−Free Packages are Available 1 2, 4 3 MARKING DIAGRAMS 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation TO−220AB CASE 221A STYLE 6 Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): • • 1 2 AYWW B20H100G AKA 3 1.9 Grams (TO−220) 1.7 Grams (D2PAK) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AYWW B20H100G AKA 1 ISOLATED TO−220 CASE 221D STYLE 3 2 MAXIMUM RATINGS 3 Please See the Table on the Following Page 4 1 2 D2PAK CASE 418B STYLE 3 AY WW B20H100G AKA 3 A Y WW B20H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Publication Order Number: MBR20H100CT/D MBR20H100CT, MBRB20H100CT, MBRF20H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 162°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 160°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 200 mJ > 400 > 8000 V Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 11 and 12) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBR20H100CT and MBRB20H100CT) (MBRF20H100CT) − Junction−to−Case − Junction−to−Ambient − Junction−to−Case RqJC RqJA RqJC 2.0 60 2.5 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR V 0.77 0.64 0.88 0.73 mA 6.0 0.0045 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping † TO−220 50 Units / Rail MBR20H100CTG TO−220 (Pb−Free) 50 Units / Rail MBRF20H100CTG TO−220FP (Pb−Free) 50 Units / Rail MBRB20H100CTT4G D2PAK (Pb−Free) 800 / Tape & Reel Device Order Number MBR20H100CT †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR20H100CT, MBRB20H100CT, MBRF20H100CT 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 1.0 0.8 1.2 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 1.0E−02 TJ = 150°C 1.0E−02 TJ = 150°C 1.0E−03 1.0E−03 TJ = 125°C 1.0E−04 TJ = 125°C 1.0E−04 1.0E−05 1.0E−05 1.0E−06 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−07 1.0E−07 1.0E−08 0 20 40 60 80 100 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 20 dc 15 SQUARE WAVE 10 5 110 1.0E−08 0 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 0 100 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 16 14 12 SQUARE 10 DC 8 6 4 2 0 0 5 10 15 20 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 100 25 MBR20H100CT, MBRB20H100CT, MBRF20H100CT 10000 C, CAPACITANCE (pF) TJ = 25°C 1000 100 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 0.01 0.000001 0.00001 0.0001 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT and MBRB20H100CT 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR20H100CT and MBRB20H100CT http://onsemi.com 4 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR20H100CT, MBRB20H100CT, MBRF20H100CT 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 Figure 11. Test Circuit t1 t2 t Figure 12. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBR20H100CT, MBRB20H100CT, MBRF20H100CT PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E −B− 4 1 2 3 K J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE DIM A B C D E F G H J K L M N P R S V W H M T B M N R P L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE U L M V W A S −T− SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR20H100CT, MBRB20H100CT, MBRF20H100CT PACKAGE DIMENSIONS TO−220 PLASTIC CASE 221A−09 ISSUE AB −T− B F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z C T S 4 A Q 1 2 3 U H K Z L R V J G STYLE 6: PIN 1. 2. 3. 4. D N TO−220 FULLPAK CASE 221D−03 ISSUE G −T− −B− F INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 SEATING PLANE C DIM A B C D F G H J K L N Q R S U U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M ANODE CATHODE ANODE CATHODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D−01 THRU 221D−02 OBSOLETE, NEW STANDARD 221D−03. S Q MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE Y SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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