AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1000V@150℃ 10A RDS(ON) (at VGS=10V) < 0.98Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF10N90L Top View D TO-220F G G AOTF10N90 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF10N90 900 Units V ±30 V 10* 7* A Pulsed Drain Current C IDM 38 Avalanche Current C IAR 3.7 A Repetitive avalanche energy C EAR 205 mJ 410 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOTF10N90 65 2.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Oct 2012 www.aosmd.com Page 1 of 5 AOTF10N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 1000 V 0.9 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.4 µA 4 4.5 nΑ V 0.98 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.82 gFS Forward Transconductance VDS=40V, ID=5A 17 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current 38 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2100 2630 3160 pF VGS=0V, VDS=25V, f=1MHz 130 190 250 pF 10 18 26 pF VGS=0V, VDS=0V, f=1MHz 1.5 3.4 5.2 Ω 45 60 75 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge S VGS=10V, VDS=720V, ID=10A 13 nC Qgd Gate Drain Charge 27 nC tD(on) Turn-On DelayTime 64 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V 460 575 700 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 7.0 9.9 12.0 Body Diode Reverse Recovery Time VGS=10V, VDS=450V, ID=10A, RG=25Ω 105 ns 155 ns 84 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Oct 2012 www.aosmd.com Page 2 of 5 AOTF10N90 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 100 -55°C VDS=40V 20 10V 6.5V 10 15 125°C ID(A) ID (A) 6V 10 1 VGS=5.5V 25°C 5 0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 2.0 Normalized On-Resistance 3 1.6 RDS(ON) (Ω Ω) 10 1.2 VGS=10V 0.8 0.4 2.5 VGS=10V ID=5A 2 1.5 1 0.5 0 0.0 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+02 1E+00 40 125°C IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 25°C 1E-02 1E-03 0.9 1E-04 0.8 1E-05 -100 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temparature Rev0: Oct 2012 -50 0 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOTF10N90 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=720V ID=10A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 1 0 0 15 30 45 60 75 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 90 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 12 10µs RDS(ON) limited 10 100µs 8 ID (Amps) Current rating ID(A) 10 6 1ms 1 10ms DC 4 0.1s 0.1 2 1s TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 TCASE (°C) Figure 9: Current De-rating (Note B) 150 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF10N90 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N90 (Note F) Rev0: Oct 2012 www.aosmd.com Page 4 of 5 AOTF10N90 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Oct 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5