HMC634 v01.0308 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC634 is ideal for: Gain: 22 dB • Point-to-Point Radios P1dB: +23 dBm • Point- to-Multi-Point Radios & VSAT Output IP3: +31 dBm • LO Driver for Mixers Saturated Power: 24 dBm @ 23% PAE • Military & Space Supply Voltage: +5 V @ 180 mA 50 Ohm Matched Input/Output Die Size: 2.07 x 0.97 x 0.10 mm Functional Diagram General Description The HMC634 is a GaAs MMIC PHEMT Driver Amplifier die which operates between 5 and 20 GHz. The amplifier provides up to 22 dB of gain, +31 dBm Output IP3, and up to +23 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC634 is an ideal driver amplifier for microwave radio applications from 5 to 20 GHz, and may be biased at +5V, 130 mA to provide 2 dB lower gain with improved PAE. The HMC634 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4= 5V, Idd= 180mA[1] Parameter Min. Frequency Range Gain 17 Gain Variation Over Temperature Min. 17 0.040 23 Max. dB 0.035 9 18 Units GHz 20 0.025 12 21 Typ. 16 - 20 12 Output Return Loss dB/ °C dB 11 dB 21 dBm Saturated Output Power (Psat) 24 22 dBm Output Third Order Intercept (IP3) 31 30 dBm Noise Figure Supply Current (Idd1 + Idd2 + Idd3 + Idd4) [1] 2 - 50 Max. 22 0.030 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 5 - 16 7 7.5 dB 180 180 mA Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Gain vs. Temperature 30 20 25 10 S21 S11 S22 0 2 20 -10 15 +25 C +85 C -55 C 10 -20 5 -30 -40 0 2 4 6 8 10 12 14 16 18 20 22 24 2 4 6 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 12 14 16 18 20 22 24 Output Return Loss vs. Temperature 0 0 -2 -5 -4 +25 C +85 C -55 C -6 RETURN LOSS (dB) RETURN LOSS (dB) 10 FREQUENCY (GHz) -8 -10 -12 -14 -10 -15 -20 +25 C +85 C -55 C -25 -16 -30 -18 -20 -35 2 4 6 8 10 12 14 16 18 20 22 2 24 4 6 8 FREQUENCY (GHz) 12 14 16 18 20 22 24 18 20 22 24 Psat vs. Temperature 30 30 27 27 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 24 21 10 FREQUENCY (GHz) +25 C +85 C -55 C 18 24 21 +25 C +85 C -55 C 18 15 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 15 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 24 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 51 HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz 27 Pout (dBm), GAIN (dB), PAE (%) 30 27 24 21 18 15 12 9 Pout (dBm) Gain (dB) PAE (%) 6 24 21 18 15 12 9 6 Pout (dBm) Gain (dB) PAE (%) 3 0 -10 -8 -6 -4 -2 0 2 4 0 -10 6 -8 -6 INPUT POWER (dBm) -4 -2 0 2 4 6 INPUT POWER (dBm) Output IP3 vs. Temperature Noise Figure vs. Temperature 15 36 34 12 NOISE FIGURE (dB) 32 IP3 (dBm) 30 28 26 24 +25 C +85 C -55 C 22 20 9 6 +25 C +85 C -55 C 3 18 16 0 3 6 9 12 15 18 21 2 24 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 24 22 24 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 12.5 GHz Reverse Isolation vs. Temperature 26 0 -10 25 ISOLATION (dB) -20 24 23 22 Gain P1dB Psat 21 +25 C +85 C -55 C -30 -40 -50 -60 -70 -80 -90 20 4.5 -100 4.6 4.7 4.8 4.9 5 Vdd (V) 2 - 52 Power Compression @ 20 GHz 30 3 GAIN (dB), P1dB (dBm), Psat (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 12.5 GHz 5.1 5.2 5.3 5.4 5.5 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Idd 30 180 25 150 20 120 Gain P1dB Psat IP3 90 15 -0.85 -0.83 -0.8 -0.78 -0.75 -0.73 -0.7 Vgg (V) Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) +5.5 Vdc Gate Bias Voltage (Vgg) -3 to 0 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 11.93 mW/°C above 85 °C) 1.07 W Thermal Resistance (channel to die bottom) 83.8 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 4.5 175 5.0 180 5.5 182 Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 210 35 Idd (mA) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Gate Voltage @ 12.5 GHz 2 - 53 HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Outline Drawing DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3, 4, 5 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See assembly diagram for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 7 Vgg Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” Application Note. See assembly diagram for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Pad Number 2 - 55 HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Assembly Diagram DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 2 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634 v01.0308 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 2 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 57