INCHANGE Semiconductor isc Silicon NPN Power Transistor BD237 DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 80V(Min) ·Complement to Type BD238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.0 A IB Base Current-Continuous 1.0 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 5.0 ℃/W 1 isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon NPN Power Transistor BD237 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A 0.6 V VBE(on) Base-Emitter On Voltage IC= 1.0A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 150mA ; VCE= 2V 40 hFE-2 DC Current Gain IC= 1.0A ; VCE= 2V 25 Current-Gain—Bandwidth Product IC= 250mA;VCE= 10V,ftest= 1.0MHz 3.0 fT CONDITIONS MIN TYP. MAX 80 UNIT V MHz Pulse test PW≤300us,duty cycle≤2.0% isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark