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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P06SLG-E1-AY Note NP20P06SLG-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES (TO-252) • Super low on-state resistance RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A) • Low input capacitance Ciss = 1650 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V ID(DC) m20 A ID(pulse) m60 A Drain Current (DC) (TC Drain Current (pulse) = 25°C) Note1 Total Power Dissipation (TC = 25°C) PT1 38 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Single Avalanche Current Note2 IAS 17 A Single Avalanche Energy Note2 EAS 28 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 3.9 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19076EJ1V0DS00 (1st edition) Date Published December 2007 NS Printed in Japan 2007 NP20P06SLG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −60 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA VGS(th) VDS = VGS, ID = −250 μA −1.0 −1.6 −2.5 V | yfs | VDS = −10 V, ID = −10 A 7 14 RDS(on)1 VGS = −10 V, ID = −10 A 36 48 mΩ RDS(on)2 VGS = −4.5 V, ID = −10 A 42 64 mΩ Input Capacitance Ciss VDS = −10 V, 1650 pF Output Capacitance Coss VGS = 0 V, 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 130 pF Turn-on Delay Time td(on) VDD = −30 V, ID = −10 A, 8 ns Rise Time tr VGS = −10 V, 8 ns Turn-off Delay Time td(off) RG = 0 Ω 160 ns Fall Time tf 80 ns Total Gate Charge QG VDD = −48 V, 34 nC Gate to Source Charge QGS VGS = −10 V, 4 nC QGD ID = −20 A 9 nC VF(S-D) IF = −20 A, VGS = 0 V 0.95 Reverse Recovery Time trr IF = −20 A, VGS = 0 V, 38 ns Reverse Recovery Charge Qrr di/dt = −100 A/μs 51 nC Gate to Source Threshold Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S 1.5 V Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet D19076EJ1V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff NP20P06SLG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 0 100 125 150 175 200 25 50 75 100 125 150 175 200 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA -1000 imi ID(pulse) t ed V) L n) i0 S( o R D S = −1 G (V -10 ID(DC) -1 PW =1 i 1i m s i 00 1i 0 DC Po w m μs s i er D is si p -0.1 at io n Li m it e d TC = 25°C Single Pulse -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A -100 Rth(ch-A) = 125°C/Wi 100 10 Rth(ch-C) = 3.9°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19076EJ1V0DS 3 NP20P06SLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -60 -100 VDS = −10 V Pulsed -10 VGS = −10 V ID - Drain Current - A ID - Drain Current - A -50 -40 −4.5 V -30 -20 -10 -1 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C -0.1 -0.01 Pulsed 0 -0.001 0 -1 -2 -3 -4 -5 0 -1 VDS - Drain to Source Voltage - V VDS = VGS ID = −250 μA -2 -1.5 -1 -0.5 0 -25 25 75 125 175 225 Tch = −55°C −25°C 25°C 75°C 10 125°C 150°C 175°C 1 VDS = −10 V Pulsed 0.1 -0.1 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 80 60 VGS = −4.5 V 40 −10 V 20 Pulsed -1 -10 ID - Drain Current - A -100 RDS(on) - Drain to Source On-state Resistance - mΩ 100 RDS(on) - Drain to Source On-state Resistance - mΩ -1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 -5 100 Tch - Channel Temperature - °C 0 -0.1 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V -3 -75 -3 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE -2.5 -2 Data Sheet D19076EJ1V0DS Pulsed 80 ID = −20 A −10 A −4 A 60 40 20 0 0 -5 -10 -15 VGS - Gate to Source Voltage - V -20 NP20P06SLG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 100 Ciss, Coss, Crss - Capacitance - pF 80 VGS = −4.5 V 60 −10 V 40 20 ID = −10 A Pulsed Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 -0.1 0 -75 -25 25 75 125 175 225 SWITCHING CHARACTERISTICS -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 -60 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) 100 tf tr 10 VDD = −30 V VGS = −10 V RG = 0 Ω 1 -0.1 td(on) -12 VDD = −48 V −30 V −12 V -50 -40 -10 -8 -30 -6 VGS -20 -4 -10 -2 VDS ID = −20 A 0 -1 -10 -100 0 0 10 ID - Drain Current - A 20 30 40 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -100 1000 VGS = −10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A -1 -10 0V -1 -0.1 100 Pulsed -0.01 0 0.5 1 1.5 10 di/dt = −100 A/μs VGS = 0 V 1 -0.1 -1 -10 -100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D19076EJ1V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP20P06SLG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.14 MAX. 3 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D19076EJ1V0DS NP20P06SLG • The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1