Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer ADG1204 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.5 pF off source capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 14-lead TSSOP and 12-lead LFCSP_VQ Typical power consumption < 0.03 μW ADG1204 S1 S2 D S3 S4 A0 A1 EN 04779-001 1 OF 4 DECODER Figure 1. APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL DESCRIPTION The ADG1204 is a complementary metal-oxide semiconductor (CMOS) analog multiplexer, comprising four single channels designed on an iCMOS (industrial CMOS) process. iCMOS® is a modular manufacturing process that combines high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of this multiplexer makes it an ideal solution for data acquisition and sample-andhold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the part suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments. The ADG1204 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines: A0, A1, and EN. Logic 0 on the EN pin disables the device. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action. PRODUCT HIGHLIGHTS 1. 2. 3. 4. 5. 6. 1.5 pF off capacitance (±15 V supply). <1 pC charge injection. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V. No VL logic power supply required. Ultralow power dissipation: <0.03 μW. 14-lead TSSOP and 12-lead, 3 mm × 3 mm LFCSP_VQ packages. Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2005–2009 Analog Devices, Inc. All rights reserved. ADG1204 TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................7 Applications ....................................................................................... 1 Pin Configurations and Function Descriptions ............................8 Functional Block Diagram .............................................................. 1 Truth Table .....................................................................................8 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................9 Product Highlights ........................................................................... 1 Test Circuits ..................................................................................... 12 Specifications..................................................................................... 3 Terminology .................................................................................... 14 Dual Supply ................................................................................... 3 Outline Dimensions ....................................................................... 15 Single Supply ................................................................................. 5 Ordering Guide .......................................................................... 15 Absolute Maximum Ratings............................................................ 7 REVISION HISTORY 2/09—Rev. A to Rev. B Changes to Power Requirements, IDD, Digital Inputs = 5 V Parameter, Table 1............................................................................. 4 Changes to Power Requirements, IDD, Digital Inputs = 5 V Parameter, Table 2............................................................................. 6 Updated Outline Dimensions ....................................................... 15 7/06—Rev. 0 to Rev. A Updated Format .................................................................. Universal Changes to Table 1 ............................................................................ 3 Changes to Table 2 ............................................................................ 5 Changes to the Terminology Section ........................................... 14 7/05—Revision 0: Initial Version Rev. B | Page 2 of 16 ADG1204 SPECIFICATIONS DUAL SUPPLY VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (ΔRON) On Resistance Flatness (RFLAT(ON)) 25°C Y Version 1 −40°C to +85°C VDD to VSS 120 190 3.5 6 20 57 230 260 10 12 72 79 LEAKAGE CURRENTS Source Off Leakage, IS (OFF) ±0.02 ±0.6 Drain Off Leakage, ID (OFF) ±0.1 ±0.02 ±0.1 ±0.02 ±0.2 Channel On Leakage, ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or INH −40°C to +125°C V Ω typ Ω max Ω typ Ω max Ω typ Ω max VS = ±10 V, VD = ∓10 V; see Figure 22 nA max nA typ VS = ±10 V, VD = ∓10 V; see Figure 22 ±0.6 ±1 VS = VD = ±10 V; see Figure 23 ±0.6 ±1 nA max nA typ nA max V min V max μA typ μA max pF typ VIN = VINL or VINH 2.0 0.8 0.005 2.5 Break-Before-Make Time Delay, tD Charge Injection Off Isolation Channel-to-Channel Crosstalk Total Harmonic Distortion + Noise −0.7 85 80 0.15 Bandwidth −3 dB CS (OFF) 800 1.2 1.5 3.6 4.2 5.5 6.5 MHz typ pF typ pF max pF typ pF max pF typ pF max 180 200 100 110 135 155 10 CD (OFF) CD, CS (ON) VS = −5 V, 0 V, +5 V; IS = −1 mA ±1 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ % typ tOFF (EN) VS = ±10 V, IS = −1 mA; see Figure 21 VDD = +13.5 V, VSS = −13.5 V VS = ±10 V, IS = −1 mA VDD = +16.5 V, VSS = −16.5 V 120 150 70 85 90 110 25 tON (EN) Test Conditions/Comments nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 Transition Time, tTRANS Unit Rev. B | Page 3 of 16 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 24 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 26 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 26 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 10 V; see Figure 25 VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 27 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz; see Figure 31 RL = 50 Ω, CL = 5 pF; see Figure 29 f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V ADG1204 Parameter POWER REQUIREMENTS IDD 25°C Y Version 1 −40°C to +85°C −40°C to +125°C 0.001 1.0 IDD 170 285 ISS 0.001 1.0 ISS 0.001 1.0 1 2 Y version temperature range is −40°C to +125°C. Guaranteed by design, not subject to production test. Rev. B | Page 4 of 16 Unit μA typ μA max μA typ μA max μA typ μA max μA typ μA max Test Conditions/Comments VDD = +16.5 V, VSS = −16.5 V Digital inputs = 0 V or VDD Digital inputs = 5 V Digital inputs = 0 V or VDD Digital inputs = 5 V ADG1204 SINGLE SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (ΔRON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source Off Leakage, IS (OFF) Drain Off Leakage, ID (OFF) Channel On Leakage, ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25°C Y Version 1 −40°C to −40°C to +85°C +125°C 0 V to VDD 300 475 5 16 60 ±0.02 ±0.1 ±0.02 ±0.1 ±0.02 ±0.2 567 625 26 27 ±0.6 ±1 ±0.6 ±1 ±0.6 ±1 2.0 0.8 0.001 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 Transition Time, tTRANS 2.5 Unit V Ω typ Ω max Ω typ Ω max Ω typ nA typ nA max nA typ nA max nA typ nA max V min V max μA typ μA max pF typ Break-Before-Make Time Delay, tD 150 190 95 120 100 125 50 Charge Injection −0.4 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation 85 dB typ Channel-to-Channel Crosstalk 80 dB typ Bandwidth −3 db CS (OFF) 550 1.2 1.5 3.6 4.2 5.5 6.5 MHz typ pF typ pF max pF typ pF max pF typ pF max tON (EN) tOFF (EN) 240 265 150 170 155 170 10 CD (OFF) CD, CS (ON) Rev. B | Page 5 of 16 Test Conditions/Comments VS = 0 V to 10 V, IS = −1 mA; see Figure 21 VDD = 10.8 V, VSS = 0 V VS = 0 V to 10 V, IS = −1 mA VS = 3 V, 6 V, 9 V; IS = −1 mA VDD = 13.2 V VS = 1 V/10 V, VD = 10 V/1 V; see Figure 22 VS = 1 V/10 V, VD = 10 V/1 V; see Figure 22 VS = VD = 1 V or 10 V; see Figure 23 VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 24 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 26 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 26 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 8 V; see Figure 25 VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 27 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 RL = 50 Ω, CL = 5 pF; see Figure 29 f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V f = 1 MHz; VS = 6 V ADG1204 Parameter POWER REQUIREMENTS IDD 25°C Y Version 1 −40°C to −40°C to +85°C +125°C 0.001 1.0 IDD 170 285 1 2 Y version temperature range is −40°C to +125°C. Guaranteed by design, not subject to production test. Rev. B | Page 6 of 16 Unit μA typ μA max μA typ μA max Test Conditions/Comments VDD = 13.2 V Digital inputs = 0 V or VDD Digital inputs = 5 V ADG1204 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to VSS VDD to GND VSS to GND Analog Inputs 1 Digital Inputs1 Peak Current, S or D Continuous Current Operating Temperature Range Automotive (Y Version) Storage Temperature Range Junction Temperature 14-Lead TSSOP, θJA Thermal Impedance (4-Layer Board) 12-Lead LFCSP_VQ, θJA Thermal Impedance Reflow Soldering Peak Temperature, Pb Free 1 Rating 35 V −0.3 V to +25 V +0.3 V to −25 V VSS − 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first GND − 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 100 mA (pulsed at 1 ms, 10% duty cycle maximum) 45 mA Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating can be applied at any one time. −40°C to +125°C −65°C to +150°C 150°C 112°C/W 80°C/W 260°C Overvoltages at IN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. B | Page 7 of 16 ADG1204 VSS 3 12 VDD S1 4 11 S3 ADG1204 TOP VIEW (Not to Scale) S2 5 10 S4 D 6 9 NC NC 7 8 NC NC = NO CONNECT VSS 1 11 A0 PIN 1 INDICATOR 9 GND S1 2 ADG1204 8 VDD S2 3 TOP VIEW (Not to Scale) 7 S3 NC = NO CONNECT NOTES 1. EXPOSED PAD TIED TO SUBSTRATE, VSS. Figure 2. TSSOP Pin Configuration Figure 3. LFCSP_VQ Pin Configuration Table 4. Pin Function Descriptions Pin No. TSSOP LFCSP_VQ 1 11 2 12 Mnemonic A0 EN 3 4 5 6 7 to 9 10 11 12 13 14 VSS S1 S2 D NC S4 S3 VDD GND A1 1 2 3 4 5 6 7 8 9 10 Description Logic Control Input. Active High Digital Input. When low, the device is disabled and all switches are off. When high, Ax logic inputs determine on switches. Most Negative Power Supply Potential. Source Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. No Connection. Source Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Most Positive Power Supply Potential. Ground (0 V) Reference. Logic Control Input. TRUTH TABLE Table 5. EN 0 1 1 1 1 A1 X 0 0 1 1 A0 X 0 1 0 1 S1 Off On Off Off Off Rev. B | Page 8 of 16 S2 Off Off On Off Off S3 Off Off Off On Off S4 Off Off Off Off On 04779-003 GND S4 6 A1 13 D 4 14 2 NC 5 1 04779-002 A0 EN 10 A1 12 EN PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS ADG1204 TYPICAL PERFORMANCE CHARACTERISTICS 200 250 180 VDD = +13.5V VSS = –13.5V 160 200 140 ON RESISTANCE (Ω) 120 100 VDD = +15V VSS = –15V 80 VDD = +16.5V VSS = –16.5V 60 40 TA = +125°C 150 TA = +85°C 100 TA = –40°C 04779-010 20 0 –18 –15 –12 –9 –6 –3 0 3 6 9 SOURCE OR DRAIN VOLTAGE (V) 12 15 0 –15 18 –10 –5 0 5 SOURCE OR DRAIN VOLTAGE (V) 10 15 Figure 4. On Resistance as a Function of VD (VS), Dual Supply Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures, Dual Supply 450 600 VDD = +12V VSS = 0V TA = +25°C 400 TA = +125°C 500 350 TA = +85°C ON RESISTANCE (Ω) ON RESISTANCE (Ω) TA = +25°C 50 04779-006 ON RESISTANCE (Ω) VDD = +15V VSS = –15V TA = +25°C VDD = +5.5V VSS = –5.5V 300 250 200 150 400 300 200 TA = –40°C 100 TA = +25°C 50 0 –5 –4 –3 –2 –1 0 1 2 3 SOURCE OR DRAIN VOLTAGE (V) 4 0 5 04779-007 04779-004 100 0 4 6 8 SOURCE OR DRAIN VOLTAGE (V) 12 10 Figure 5. On Resistance as a Function of VD (VS), Dual Supply Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures, Single Supply 450 0.30 TA = 25°C 400 0.20 LEAKAGE (nA) 300 250 VDD = 13.2V VSS = 0V 200 150 ID, IS (ON) 0.15 0.10 IS (OFF) 0.05 0 04779-005 50 0 2 4 6 8 10 SOURCE OR DRAIN VOLTAGE (V) 12 14 ID (OFF) –0.05 –0.10 04779-008 100 0 VDD = +16.5V VSS = –16.5V VBIAS = +10V/–10V 0.25 VDD = 12V VSS = 0V VDD = 10.8V VSS = 0V 350 ON RESISTANCE (Ω) 2 0 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 9. Leakage Currents as a Function of Temperature, Dual Supply Figure 6. On Resistance as a Function of VD (VS), Single Supply Rev. B | Page 9 of 16 ADG1204 0.20 250 VDD = 13.2V VSS = 0V VBIAS = 10V/1V 0.15 200 VDD = +12V, VSS = 0V ID, IS (ON) 0.05 TIME (ns) LEAKAGE (nA) 0.10 ID (OFF) 0 –0.05 150 VDD = +15V, VSS = –15V 100 IS (OFF) –0.10 04779-009 –0.20 0 20 40 60 80 TEMPERATURE (°C) 100 0 –40 120 Figure 10. Leakage Currents as a Function of Temperature, Single Supply –20 0 20 40 60 TEMPERATURE (°C) 80 100 120 Figure 13. Transition Times vs. Temperature 60 0 IDD PER CHANNEL TA = +25°C –10 50 –20 OFF ISOLATION (dB) VDD = +15V, VSS = –15V 40 IDD (µA) 04779-015 50 –0.15 30 20 VDD = +15V VSS = –15V TA = +25°C –30 –40 –50 –60 –70 –80 VDD = +12V, VSS = 0V 0 2 4 6 8 10 LOGIC, INX (V) 12 –100 –110 10k 14 Figure 11. IDD vs. Logic Level 1M 10M FREQUENCY (Hz) 100M 1G 0 SOURCE TO DRAIN DRAIN TO SOURCE TA = +25°C –10 –20 VDD = +15V VSS = –15V TA = +25°C –30 0 CROSSTALK (dB) 2 VDD = +5V, VSS = –5V VDD = +12V, VSS = 0V –2 –40 S1 TO S2 –50 –60 –70 S2 TO S4 –80 –90 –6 –15 VDD = +15V, VSS = –15V –10 –5 0 VS (V) –100 5 10 15 Figure 12. Charge Injection vs. Source Voltage 04779-017 –4 04779-014 CHARGE INJECTION (pC) 100k Figure 14. Off Isolation vs. Frequency 6 4 04779-016 0 –90 04779-011 10 –110 –120 10k 100k 1M 10M FREQUENCY (Hz) Figure 15. Crosstalk vs. Frequency Rev. B | Page 10 of 16 100M 1G ADG1204 6.5 0 VDD = +15V VSS = –15V TA = +25°C 6.3 6.1 CAPACITANCE (pF) –10 –15 –20 5.9 S1 5.7 S3 5.5 S4 5.3 S2 5.1 4.9 04779-018 –25 –30 10k 100k 1M 10M 100M FREQUENCY (Hz) 1G 04779-032 ON RESPONSE (dB) –5 VDD = +15V VSS = –15V TA = +25°C 4.7 4.5 –10 10G Figure 16. On Response vs. Frequency –8 –6 –4 –2 0 2 VBIAS (V) 4 6 8 10 Figure 19. On Capacitance vs. Source Voltage 9 10.00 LOAD = +10kΩ TA = +25°C VDD = 12V VSS = 0V TA = 25°C 8 SOURCE/DRAIN ON CAPACITANCE (pF) 7 THD + N (%) 1.00 VDD = +5V, VSS = –5V, VS = +3.5Vrms VDD = +15V, VSS = –15V, VS = +5Vrms 0.10 6 5 4 DRAIN OFF 3 0.01 10 100 1k FREQUENCY (Hz) 10k 100k Figure 17. THD + N vs. Frequency 3.0 D VDD = +15V VSS = –15V TA = +25°C 2.5 2.0 S1 1.5 S3 1.0 S2 0.5 0 –10 04779-031 CAPACITANCE (pF) 3.5 S4 –8 –6 –4 –2 0 2 4 0 SOURCE OFF 0 2 4 6 VBIAS (V) 8 10 Figure 20. Capacitance vs. Source Voltage, Single Supply 4.5 4.0 1 04779-033 04779-019 2 6 8 10 VBIAS (V) Figure 18. Off Capacitance vs. Source Voltage Rev. B | Page 11 of 16 12 ADG1204 TEST CIRCUITS V A IDS A S NC VDD VSS A0 EN 0.1µF S1 S2 S3 S4 ADDRESS DRIVE (VIN) VS1 VS4 3V 50% 90% 90% VOUT RL 300Ω 50% 0V VOUT D GND tTRANSITION CL 35pF tTRANSITION Figure 24. Address to Output Switching Times VS 50Ω 2.4V A1 A0 VDD VSS VDD VSS EN 0.1µF S1 S2 S3 S4 VOUT D GND ADDRESS DRIVE (VIN) VS1 0V VOUT CL 35pF RL 300Ω 3V 80% 80% 04779-024 0.1µF tBBM Figure 25. Break-Before-Make Time Delay A1 VDD VSS VDD VSS A0 EN VS 50Ω 0.1µF S1 S2 S3 S4 ENABLE DRIVE (VIN) VS 50% VO RL 300Ω CL 35pF VOUT 0.9VO 0.9VO 0V Figure 26. Enable-to-Output Switching Delay Rev. B | Page 12 of 16 50% 0V OUTPUT D GND 3V tON (EN) tOFF (EN) 04779-025 0.1µF A VD Figure 23. On Leakage 04779-023 A1 VDD VSS D NC = NO CONNECT Figure 22. Off Leakage 0.1µF 2.4V ID (ON) ID (OFF) VD Figure 21. On Resistance VS D VS 04779-020 VS S 04779-022 IS (OFF) D 04779-021 S ADG1204 VDD VSS VDD VSS S D VOUT RS ΔVOUT QINJ = CL × ΔVOUT VOUT VIN CL 1nF VS DECODER SW OFF SW OFF SW ON GND SW ON VIN SW OFF SW OFF 04779-026 A1 A2 EN Figure 27. Charge Injection VDD VSS VDD NETWORK ANALYZER NETWORK ANALYZER VSS S VOUT 0.1µF VDD D VS S2 D GND VOUT R 50Ω VS GND OFF ISOLATION = 20 log VOUT VS 04779-027 RL 50Ω VSS S1 RL 50Ω 50Ω 50Ω CHANNEL-TO-CHANNEL CROSSTALK = 20 log Figure 28. Off Isolation VDD VSS 0.1µF 0.1µF 04779-029 VDD 0.1µF VOUT VS Figure 30. Channel-to-Channel Crosstalk VSS 0.1µF VDD VDD VSS S S D IN VOUT VOUT WITHOUT SWITCH 04779-028 VOUT WITH SWITCH VS V p-p D VIN INSERTION LOSS = 20 log AUDIO PRECISION VSS RS VS GND 0.1µF VDD 50Ω RL 50Ω VSS 0.1µF NETWORK ANALYZER Figure 29. Bandwidth GND RL 10kΩ Figure 31. THD + Noise Rev. B | Page 13 of 16 VOUT 04779-030 0.1µF ADG1204 TERMINOLOGY IDD The positive supply current. CD, CS (On) The on switch capacitance, measured with reference to ground. ISS The negative supply current. CIN The digital input capacitance. VD (VS) The analog voltage on Terminal D and Terminal S. tON (EN) The delay between applying the digital control input and the output switching on. RON The ohmic resistance between D and S. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance, as measured over the specified analog signal range. IS (OFF) The source leakage current with the switch off. tOFF (EN) The delay between applying the digital control input and the output switching off. tTRANS The delay time between the 50% and 90% points of the digital input and switch on condition when switching from one address state to another. ID (OFF) The drain leakage current with the switch off. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. ID, IS (ON) The channel leakage current with the switch on. Off Isolation A measure of unwanted signal coupling through an off switch. VINL The maximum input voltage for Logic 0. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. VINH The minimum input voltage for Logic 1. IINL (IINH) The input current of the digital input. CS (OFF) The off switch source capacitance, which is measured with reference to ground. CD (OFF) The off switch drain capacitance, which is measured with reference to ground. Bandwidth The frequency at which the output is attenuated by −3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. Total Harmonic Distortion + Noise (THD + N) The ratio of the harmonic amplitude plus noise of the signal to the fundamental. Rev. B | Page 14 of 16 ADG1204 OUTLINE DIMENSIONS 5.10 5.00 4.90 14 8 4.50 4.40 4.30 6.40 BSC 1 7 PIN 1 0.65 BSC 1.20 MAX 0.15 0.05 COPLANARITY 0.10 0.30 0.19 0.20 0.09 0.75 0.60 0.45 8° 0° SEATING PLANE 061908-A 1.05 1.00 0.80 COMPLIANT TO JEDEC STANDARDS MO-153-AB-1 Figure 32. 14-Lead Thin Shrink Small Outline Package [TSSOP] (RU-14) Dimensions shown in millimeters 3.15 3.00 SQ 2.85 SEATING PLANE 12° MAX 10 9 0.75 0.60 0.50 7 EXPOSED PAD (BOTTOM VIEW) 6 PIN 1 INDICATOR 12 1 *1.45 1.30 SQ 1.15 3 4 0.25 MIN 0.80 MAX 0.65 TYP 0.05 MAX 0.02 NOM 0.30 0.23 0.18 0.20 REF COPLANARITY 0.08 *COMPLIANT TO JEDEC STANDARDS MO-220-VEED-1 EXCEPT FOR EXPOSED PAD DIMENSION. 050808-B 1.00 0.85 0.80 0.50 BSC 0.60 MAX 2.95 2.75 SQ 2.55 TOP VIEW PIN 1 INDICATOR 0.60 MAX Figure 33. 12-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 3 mm × 3 mm Body, Very Thin Quad (CP-12-1) Dimensions shown in millimeters ORDERING GUIDE Model ADG1204YRUZ 1 ADG1204YRUZ-REEL1 ADG1204YRUZ-REEL71 ADG1204YCPZ-500RL71 ADG1204YCPZ-REEL71 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 14-Lead Thin Shrink Small Outline Package (TSSOP) 14-Lead Thin Shrink Small Outline Package (TSSOP) 14-Lead Thin Shrink Small Outline Package (TSSOP) 12-Lead Lead Frame Chip Scale Package (LFCSP_VQ) 12-Lead Lead Frame Chip Scale Package (LFCSP_VQ) Z = RoHS Compliant Part.. Rev. B | Page 15 of 16 Package Option RU-14 RU-14 RU-14 CP-12-1 CP-12-1 ADG1204 NOTES ©2005–2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04779-0-2/09(B) Rev. B | Page 16 of 16