AP6N100JV
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
60V
RDS(ON)
100mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
7.5A
S
Description
AP6N100 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-251VS(JV)
The TO-251VS short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Parameter
Rating
Units
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
7.5
A
ID@TC=100℃
Drain Current, VGS @ 10V
4.7
A
Symbol
VDS
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
Single Pulse Avalanche Energy
EAS
3
30
A
12.5
W
1.13
W
8.8
mJ
℃
℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
1
201706201
AP6N100JV
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
Min.
Typ.
60
-
-
V
VGS=10V, ID=5A
-
-
100
mΩ
VGS=4.5V, ID=3A
-
-
125
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=48V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
4
-
ns
tr
Rise Time
ID=5A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
13
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
672
pF
Coss
Output Capacitance
VDS=30V
Crss
Rg
-
32
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
24
-
pF
Gate Resistance
f=1.0MHz
-
0.9
1.8
Ω
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
11
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N100JV
24
16
o
T C = 25 C
16
ID , Drain Current (A)
ID , Drain Current (A)
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
12
8
12
8
4
4
0
0
0
2
4
6
8
10
12
0
1
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
76
2.8
I D =5A
V GS =10V
I D =3A
o
2.4
68
.
Normalized RDS(ON)
T C =25 C
72
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2.0
1.6
1.2
0.8
64
0.4
0.0
60
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N100JV
f=1.0MHz
12
1000
I D = 5A
V DS =48V
800
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
12
1
21
Q G , Total Gate Charge (nC)
41
61
81
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
ID (A)
10us
.
1
100us
1ms
10ms
DC
0.1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
0.1
1
10
0.00001
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
2
I D =1mA
10
Normalized BVDSS
ID , Drain Current (A)
1.6
8
6
4
1.2
0.8
0.4
2
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
-100
-50
0
T
j
50
100
150
, Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP6N100JV
400
20
o
T j =25 C
PD, Power Dissipation(W)
16
RDS(ON) (mΩ)
300
200
4.5V
V GS =10V
100
12
8
4
0
0
0
4
8
12
16
0
20
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
16
ID , Drain Current (A)
V DS =5V
12
8
.
T j =150 o C
4
T j =25 o C
T j = -55 o C
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 15. Transfer Characteristics
5
AP6N100JV
MARKING INFORMATION
Part Number
6N100
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6