APTC60AM35SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NT C2 VBUS VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Q1 G1 - O UT S1 Q2 G2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration 0/VBUS S2 NT C1 OUT Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated • • VBUS Benefits • Outstanding performance at high frequency operation 0/VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance S2 S1 NTC2 • Solderable terminals both for power and signal for G1 G2 NTC1 easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 288 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 www.microsemi.com 1–8 APTC60AM35SCTG – Rev 3 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com July, 2006 OUT APTC60AM35SCTG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min VGS = 10V, ID = 36A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Min Typ 14 5.13 0.42 518 Unit mΩ V nA nF nC 30 84 804 1315 µJ 2412 Typ Max 350 600 Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 www.microsemi.com µJ 1960 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 283 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω IF = 60A VR = 133V di/dt = 400A/µs Max µA 21 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω IF = 60A IF = 120A IF = 60A Unit 222 Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω VR=200V Max 50 500 35 3.9 ±150 58 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.1 VGS = 10V VBus = 300V ID = 72A Series diode ratings and characteristics IRM Typ Tj = 25°C Tj = 125°C Unit V µA A 1.15 V July, 2006 Symbol ns nC 2–8 APTC60AM35SCTG – Rev 3 Electrical Characteristics APTC60AM35SCTG Parallel SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IF Maximum Reverse Leakage Current VR=600V DC Forward Current Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 200 400 40 1.6 2.0 800 4000 VF Diode Forward Voltage IF = 40A QC Total Capacitive Charge IF = 40A, VR = 300V di/dt =1200A/µs 56 C Total Capacitance f = 1MHz, VR = 200V 260 f = 1MHz, VR = 400V 200 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To Heatsink M5 2500 -40 -40 -40 2.5 R 25 V nC pF Max 0.3 0.65 0.8 Unit °C/W V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T July, 2006 RT = Min µA A 1.8 2.4 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V www.microsemi.com 3–8 APTC60AM35SCTG – Rev 3 IRM Test Conditions APTC60AM35SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4–8 APTC60AM35SCTG – Rev 3 July, 2006 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC60AM35SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 T J=125°C 40 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS =20V 1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 Normalized to VGS=10V @ 36A T J=-55°C 0.95 70 60 50 40 30 20 10 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 5–8 APTC60AM35SCTG – Rev 3 RDS(on) Drain to Source ON Resistance ID, Drain Current (A) 280 ID, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 10 0.6 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss 10000 Coss 1000 Crss 10 1000 14 ID=72A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 100 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 72A www.microsemi.com 6–8 APTC60AM35SCTG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM35SCTG APTC60AM35SCTG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 80 40 40 60 80 100 tr 20 0 20 0 120 0 20 ID, Drain Current (A) Eoff 4 Eon 2 ZVS 5 10 15 20 25 Source to Drain Diode Forward Voltage 1000 ZCS 0 T J=150°C 100 TJ=25°C 10 1 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) www.microsemi.com 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 Hard Switching V DS =400V D=50% RG =2.5Ω T J=125°C 0 I DR, Reverse Drain Current (A) Frequency (kHz) 6 Eoff Gate Resistance (Ohms) 120 20 VDS=400V ID=72A T J=125°C L=100µH 8 120 140 40 120 7–8 APTC60AM35SCTG – Rev 3 40 60 80 100 ID, Drain Current (A) Operating Frequency vs Drain Current 60 100 0 20 160 80 80 Switching Energy vs Gate Resistance Eon 0 100 60 10 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH 40 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 tf 60 td(on) 0 VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60AM35SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 800 T J=25°C 60 T J=75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 80 T J=175°C 40 TJ=125°C 20 700 500 0.5 1 1.5 2 2.5 3 TJ=125°C T J=75°C 400 300 200 T J=25°C 100 0 0 T J=175°C 600 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 1600 C, Capacitance (pF) 1400 1200 1000 800 600 400 200 0 1000 July, 2006 10 100 VR Reverse Voltage “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APTC60AM35SCTG – Rev 3 1