Rectron BC558B Pnp silicon planar epitaxial transistor Datasheet

BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
PNP Silicon Planar Epitaxial Transistors
1
2
3
TO-92 SMD Package
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
SYMBOL
BC556
DESCRIPTION
VCEO
65
Collector Emitter Voltage
V
Collector Emmitter Voltage
80
CES
VCBO
Collector Base Voltage
80
VEBO
5
Emitter Base Voltage
IC
Collector Current Continuous
ICM
Peak
IEM
Emitter Current - Peak
IBM
Base Current - Peak
BC557
45
50
50
5
100
200
200
200
Total power dissipation up to
Tamb = 25 oC
Ptot
500
Storge Temperature
Junction Temperature
Tstg
Tj
-55 to +150
150
Thermal Resistance
From junction to ambient
Rth(j-a)
250
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BC558
30
30
30
5
UNITS
V
V
V
V
mA
mA
mA
mW
o
o
o
C
C
C/W
1 of 3
BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics (Ta=25 oC unless otherwise specified)
SYMBOL TEST CONDITION
DESCRIPTION
IC = 2mA, IB = 0
Collector Emitter Voltage
VCEO
BC556
BC557
BC558
Collector Base Voltage
BC556
BC557
BC558
VCBO
VEBO
ICBO
Emitter Base Voltage
Collector Cut off Current
Collector Cut off Current
BC556
BC557
BC558
BC556
BC557
BC558
ICES
Base Emitter On Voltage
VBE(on)
Collector Emitter Saturation Voltage
VCE(Sat)
Base Emitter Saturation Voltage
VBE(Sat)
DC Current Gain
hFE
MIN TYP MAX
65
45
30
UNITS
V
IC = 100uA, IE = 0
IE = 100uA, IC = 0
80
50
30
5
V
VCB = 30V, IE = 0
15
VCB = 30V, IE = 0, Tj = 150oC
4
VCE = 80V
VCE = 50V
VCE = 30V
VCE = 80V, Tj = 125 oC
VCE = 50V, Tj = 125 oC
VCE = 30V, Tj = 125 oC
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 100mA, I B = 5mA
IC = 10mA, IB = 0.5mA
IC = 100mA, I B = 5mA
0.20
0.20
0.20
0.55
0.66
0.09
0.25
0.70
0.90
15
15
15
4
4
4
0.70
0.82
0.30
0.65
V
nA
uA
nA
nA
nA
uA
uA
uA
V
V
V
VCE = 5V, IC = 10uA
A
B
C
90
150
270
VCE = 5V, IC = 2mA
BC556
BC557/BC558
A
B
C
75
75
110
200
420
180
290
500
475
800
220
450
800
VCE = 5V, IC = 100mA
A
B
C
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120
200
400
2 of 3
BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics (Ta=25 oC unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMICS CHARACTERISTICS
IC = 10mA, V CE = 5V, f = 100MHZ
fT
Transition Frequency
VCB = 10V, f = 1MHZ
Ccbo
Collector output Capacitance
Noise Figure
NF
MIN TYP MAX
UNITS
150
MHZ
6
VCE = 5V, IC = 0.2mA
2
10
pF
dB
RS= 2k ohm, f = 1KH Z, B= 200HZ
Small Signal Current Gain
Input Impedance
Voltage Feedback
Output Admittance
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hfe
hie
hre
hoe
VCE = 5V, IC = 2mA, f= 1kH Z
A
B
C
220
330
600
VCE = 5V, IC = 2mA, f= 1kH Z
A
B
C
1.6
3.2
6.0
2.7
4.5
8.7
4.5
8.5
15
k ohm
VCE = 5V, IC = 2mA, f= 1kH Z
A
B
C
1.5
2.0
3.0
x10
VCE = 5V, IC = 2mA, f= 1kH Z
A
B
C
18
30
60
30
60
110
u MHO
3 of 3
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