AD OP467 Quad precision, high speed operational amplifier Datasheet

Quad Precision, High
Speed Operational Amplifier
OP467
PIN CONFIGURATIONS
High slew rate: 170 V/μs
Wide bandwidth: 28 MHz
Fast settling time: <200 ns to 0.01%
Low offset voltage: <500 μV
Unity-gain stable
Low voltage operation: ±5 V to ±15 V
Low supply current: <10 mA
Drives capacitive loads
OUT A 1
14 OUT D
–IN A 2
+
13 –IN D
+
12 +IN D
+IN A 3
OP467
+IN B 5
–IN B 6
+
11 V–
10 +IN C
+
V+ 4
OUT B 7
9
–IN C
8
OUT C
The dc performance of the OP467 includes less than 0.5 mV of
offset, a voltage noise density below 6 nV/√Hz, and a total
supply current under 10 mA. The common-mode rejection
ratio (CMRR) is typically 85 dB. The power supply rejection
ratio (PSRR) is typically 107 dB. PSRR is maintained to better than
40 dB with input frequencies as high as 1 MHz. The low offset and
drift plus high speed and low noise make the OP467 usable in
applications such as high speed detectors and instrumentation.
NC
8
NC
–IN D
9
16
V–
15
NC
14
+IN C
10 11 12 13
00302-003
NC
+IN B 8
11 –IN C
9
OP467
(TOP VIEW)
NC 7
12 +IN C
NC = NO CONNECT
OUT D
NC
V+ 6
13 V–
10 OUT C
–IN A
+IN D
17
–IN C
–IN B 6
OUT B 7
OP467
18
NC 5
–IN B
V+ 4
+IN B 5
20 19
+IN A 4
NC
14 +IN D
1
OUT C
15 –IN D
2
NC = NO CONNECT
Figure 2. 16-Lead SOIC (S Suffix)
Figure 3. 20-Terminal LCC (RC Suffix)
V+
+IN
OUT
–IN
V–
00302-004
The internal compensation of the OP467 ensures stable unitygain operation, and it can drive large capacitive loads without
oscillation. With a gain bandwidth product of 28 MHz driving a
30 pF load, output slew rate is 170 V/μs, and settling time to
0.01% in less than 200 ns, the OP467 provides excellent
dynamic accuracy in high speed data acquisition systems. The
channel-to-channel separation is typically 60 dB at 10 MHz.
–IN A 2
+IN A 3
3
OUT B
The OP467 is a quad, high speed, precision operational
amplifier. It offers the performance of a high speed op amp
combined with the advantages of a precision op amp in a single
package. The OP467 is an ideal choice for applications where,
traditionally, more than one op amp was used to achieve this
level of speed and precision.
16 OUT D
00302-002
GENERAL DESCRIPTION
OUT A 1
OUT A
Figure 1. 14-Lead CERDIP (Y Suffix) and 14-Lead PDIP (P Suffix)
APPLICATIONS
High speed image display drivers
High frequency active filters
Fast instrumentation amplifiers
High speed detectors
Integrators
Photo diode preamps
00302-001
FEATURES
Figure 4. Simplified Schematic
The OP467 is specified for operation from ±5 V to ±15 V over
the extended industrial temperature range (−40°C to +85°C)
and is available in a 14-lead PDIP, a 14-lead CERDIP, a 16-lead
SOIC, and a 20-terminal LCC.
Contact your local sales office for the MIL-STD-883 data sheet
and availability.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2007 Analog Devices, Inc. All rights reserved.
OP467
TABLE OF CONTENTS
Features .............................................................................................. 1
Output Short-Circuit Performance.......................................... 13
Applications....................................................................................... 1
Unused Amplifiers ..................................................................... 13
General Description ......................................................................... 1
Printed Circuit Board (PCB) Layout Considerations ........... 13
Pin Configurations ........................................................................... 1
Grounding ................................................................................... 13
Revision History ............................................................................... 2
Power Supply Considerations................................................... 13
Specifications..................................................................................... 3
Signal Considerations ................................................................ 13
Electrical Characteristics............................................................. 3
Phase Reversal ............................................................................ 14
Wafer Test Limits.......................................................................... 5
Saturation Recovery Time......................................................... 14
Absolute Maximum Ratings............................................................ 6
High Speed Instrumentation Amplifier .................................. 14
Thermal Resistance ...................................................................... 6
2 MHz Biquad Band-Pass Filter ............................................... 15
Dice Characteristics ..................................................................... 6
Fast I-to-V Converter ................................................................ 16
ESD Caution.................................................................................. 6
OP467 SPICE Marco-Model..................................................... 17
Typical Performance Characteristics ............................................. 7
Outline Dimensions ....................................................................... 19
Applications Information .............................................................. 13
Ordering Guide .......................................................................... 20
REVISION HISTORY
5/07—Rev. E to Rev. F
Updated Format..................................................................Universal
Changes to General Description .................................................... 1
Changes to Table 1............................................................................ 3
Changes to Table 2............................................................................ 4
Changes to Table 3............................................................................ 5
Updated Outline Dimensions ....................................................... 19
Changes to Ordering Guide .......................................................... 20
4/01—Rev. C to Rev. D
Footnote added to Power Supply.....................................................2
Footnote added to Max Ratings ......................................................4
Edits to Power Supply Considerations Section........................... 11
3/04—Rev. D to Rev. E
Changes to TPC 1 ............................................................................. 5
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ....................................................... 16
Rev. F | Page 2 of 20
OP467
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
@ VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
Conditions
Min
VOS
Input Bias Current
IB
Input Offset Current
IOS
Common-Mode Rejection
Large Signal Voltage Gain
CMR
CMR
AVO
Offset Voltage Drift
Bias Current Drift
Long-Term Offset Voltage Drift 1
ΔVOS/ΔT
ΔIB/ΔT
ΔVOS/ΔT
−40°C ≤ TA ≤ +85°C
VCM = 0 V
VCM = 0 V, −40°C ≤ TA ≤ +85°C
VCM = 0 V
VCM = 0 V, −40°C ≤ TA ≤ +85°C
VCM = ±12 V
VCM = ±12 V, −40°C ≤ TA ≤ +85°C
RL = 2 kΩ
RL = 2 kΩ, −40°C ≤ TA ≤ +85°C
80
80
83
77.5
Typ
Max
Unit
0.2
0.5
1
600
700
100
150
mV
mV
nA
nA
nA
nA
dB
dB
dB
dB
μV/°C
pA/°C
μV
150
150
10
10
90
88
86
3.5
0.2
750
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
RL = 2 kΩ
RL = 2 kΩ, −40°C ≤ TA ≤ +85°C
±13.0
±12.9
±13.5
±13.12
V
V
POWER SUPPLY 2
Power Supply Rejection Ratio
PSRR
±4.5 V ≤ VS ≤ ±18 V
−40°C ≤ TA ≤ +85°C
VO = 0 V
VO = 0 V, −40°C ≤ TA ≤ +85°C
96
86
120
115
8
dB
dB
mA
mA
V
Supply Current
ISY
Supply Voltage Range
VS
±4.5
10
13
±18
DYNAMIC PERFORMANCE
Gain Bandwidth Product
Slew Rate
Full-Power Bandwidth
Settling Time
Phase Margin
Input Capacitance
Common Mode
Differential
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
1
2
GBP
SR
BWρ
tS
θ0
eN p-p
eN
iN
AV = +1, CL = 30 pF
VIN = 10 V step, RL = 2 kΩ, CL = 30 pF
AV = +1
AV = −1
VIN = 10 V step
To 0.01%, VIN = 10 V step
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
125
28
MHz
170
350
2.7
200
45
V/μs
V/μs
MHz
ns
Degrees
2.0
1.0
pF
pF
0.15
6
0.8
μV p-p
nV/√Hz
pA/√Hz
Long-term offset voltage drift is guaranteed by 1000 hrs. Life test performed on three independent wafer lots at 125°C, with an LTPD of 1.3.
For proper operation, the positive supply must be sequenced ON before the negative supply.
Rev. F | Page 3 of 20
OP467
@ VS = ±5.0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
Min
VOS
Input Bias Current
IB
Input Offset Current
IOS
Common-Mode Rejection
CMR
CMR
AVO
Large Signal Voltage Gain
Conditions
−40°C ≤ TA ≤ +85°C
VCM = 0 V
VCM = 0 V, −40°C ≤ TA ≤ +85°C
VCM = 0 V
VCM = 0 V, −40°C ≤ TA ≤ +85°C
VCM = ±2.0 V
VCM = ±2.0 V, −40°C ≤ TA ≤ +85°C
RL = 2 kΩ
RL = 2 kΩ, −40°C ≤ TA ≤ +85°C
Typ
Max
Unit
0.3
0.5
1
600
700
100
150
3.5
0.2
mV
mV
nA
nA
nA
nA
dB
dB
dB
dB
μV/°C
pA/°C
125
150
20
76
76
80
74
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
RL = 2 kΩ
RL = 2 kΩ, −40°C ≤ TA ≤ +85°C
±3.0
±3.0
±3.5
±3.20
V
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
±4.5 V ≤ VS ≤ ±5.5 V
−40°C ≤ TA ≤ +85°C
VO = 0 V
VO = 0 V, −40°C ≤ TA ≤ +85°C
92
83
107
105
8
dB
dB
mA
mA
Supply Current
DYNAMIC PERFORMANCE
Gain Bandwidth Product
Slew Rate
Full-Power Bandwidth
Settling Time
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
ΔVOS/ΔT
ΔIB/ΔT
85
80
83
ISY
GBP
SR
BWρ
tS
θ0
eN p-p
eN
iN
AV = +1
VIN = 5 V step, RL = 2 kΩ, CL = 39 pF
AV = +1
AV = −1
VIN = 5 V step
To 0.01%, VIN = 5 V step
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Rev. F | Page 4 of 20
10
12
22
MHz
90
90
2.5
280
45
V/μs
V/μs
MHz
ns
Degrees
0.15
7
0.8
μV p-p
nV/√Hz
pA/√Hz
OP467
WAFER TEST LIMITS 1
@ VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range 2
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Range
Supply Current
Symbol
VOS
IB
IOS
Conditions
CMRR
PSRR
AVO
VO
ISY
VCM = ±12 V
V = ±4.5 V to ±18 V
RL = 2 kΩ
RL = 2 kΩ
VO = 0 V, RL = ∞
VCM = 0 V
VCM = 0 V
1
Limit
±0.5
600
100
±12
80
96
83
±13.0
10
Unit
mV max
nA max
nA max
V min/max
dB min
dB min
dB min
V min
mA max
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult sales to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
2
Guaranteed by CMR test.
Rev. F | Page 5 of 20
OP467
ABSOLUTE MAXIMUM RATINGS
Table 4.
−65°C to +175°C
−65°C to +150°C
−55°C to +125°C
−40°C to +85°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 5.
−65°C to +175°C
−65°C to +150°C
300°C
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For proper operation, the positive supply must be sequenced ON before the
negative supply.
3
For supply voltages less than ±18 V, the absolute maximum input voltage is
equal to the supply voltage.
θJA1
94
76
88
78
Package Type
14-Lead CERDIP (Y)
14-Lead PDIP (P)
16-Lead SOIC (S)
20-Terminal LCC (RC)
θJC
10
33
23
33
Unit
°C/W
°C/W
°C/W
°C/W
1
θJA is specified for the worst-case conditions, that is, θJA is specified for device
in socket for CERDIP, PDIP, and LCC packages, and θJA is specified for device
soldered in circuit board for the SOIC package.
–IN A
2
OUT D
DICE CHARACTERISTICS
OUT A
1
14
+IN A 3
V+
13 –IN D
12 +IN D
4
11 V–
+IN B 5
6
7
8
9
Figure 5. 0.111 Inch × 0.100 Inch DIE Size, 11,100 sq. mils,
Substrate Connected to V+, 165 Transistors
ESD CAUTION
Rev. F | Page 6 of 20
–IN C
00302-005
–IN B
10 +IN C
OUT C
1
Rating
±18 V
±18 V
±26 V
Limited
OUT B
Parameter 1
Supply Voltage 2
Input Voltage 3
Differential Input Voltage3
Output Short-Circuit Duration
Storage Temperature Range
14-Lead CERDIP and 20-Terminal LCC
14-Lead PDIP and 16-Lead SOIC
Operating Temperature Range
OP467A
OP467G
Junction Temperature Range
14-Lead CERDIP and 20-Terminal LCC
14-Lead PDIP and 16-Lead SOIC
Lead Temperature (Soldering, 60 sec)
OP467
TYPICAL PERFORMANCE CHARACTERISTICS
100
80
40
30
20
–90
PHASE
–135
0
–180
–10
–20
1k
10k
100k
1M
10M
40
AVCL = +10
20
AVCL = +1
00302-006
10
AVCL = +100
60
00302-009
GAIN
IMPEDANCE (Ω)
50
80
PHASE SHIFT (Degrees)
60
OPEN-LOOP GAIN (dB)
VS = ±15V
TA = 25°C
VS = ±15V
RL = 1MΩ
CL = 30pF
70
0
100
100M
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 6. Open-Loop Gain, Phase vs. Frequency
Figure 9. Closed-Loop Output Impedance vs. Frequency
80
VS = ±15V
TA = 25°C
0.3
VS = ±5V
0.2
GAIN ERROR (dB)
40
20
0.1
0.0
VS = ±15V
–0.1
–0.2
–0.3
00302-007
0
–20
10k
100k
1M
10M
00302-010
CLOSED-LOOP GAIN (dB)
60
0
100k
100M
3.4
1M
5.8
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7. Closed-Loop Gain vs. Frequency
Figure 10. Gain Error vs. Frequency
25
30
AVCL = –1
25
15
TA = +25°C
10
TA = –55°C
5
0
0
±5
±10
±15
±20
AVCL = +1
20
15
10
5
0
1k
VS = ±15V
TA = 25°C
RL = 2kΩ
00302-011
MAXIMUM OUTPUT SWING (V)
TA = +125°C
00302-008
OPEN-LOOP GAIN (V/mV)
20
10k
100k
1M
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
Figure 11. Maximum VOUT Swing vs. Frequency
Figure 8. Open-Loop Gain vs. Supply Voltage
Rev. F | Page 7 of 20
10M
OP467
12
60
VS = ±5V
TA = 25°C
RL = 2kΩ
50
AVCL = +1
OVERSHOOT (%)
8
AVCL = –1
6
4
40
30
20
10
10k
100k
1M
00302-015
2
0
1k
0
10M
200
0
400
FREQUENCY (Hz)
1000
1200
1400
1600
Figure 15. Small Signal Overshoot vs. Load Capacitance
120
60
VS = ±15V
TA = 25°C
100
VS = ±15V
RL = 2kΩ
VVIN = 100mV p-p
50
OVERSHOOT (%)
80
60
40
AVCL = +1
AVCL = –1
40
30
20
10
0
1k
10k
100k
1M
00302-016
20
00302-013
COMMON-MODE REJECTION (V)
800
600
LOAD CAPACITANCE (pF)
Figure 12. Maximum VOUT Swing vs. Frequency
0
10M
200
0
400
FREQUENCY (Hz)
1000
1200
1400
1600
Figure 16. Small Signal Overshoot vs. Load Capacitance
120
60
VS = ±15V
TA = 25°C
100
VS = ±15V
50
40
30
GAIN (dB)
80
60
40
1000pF
500pF
20
200pF
10000pF
10
0
–10
CIN = NETWORK
ANALYZER
00302-014
1k
10k
100k
00302-017
–20
20
0
100
800
600
LOAD CAPACITANCE (pF)
Figure 13. Common-Mode Rejection vs. Frequency
POWER SUPPLY REJECTION (dB)
AVCL = +1
AVCL = –1
00302-012
MAXIMUM OUTPUT SWING (V)
10
VS = ±15V
RL = 2kΩ
VVIN = 100mV p-p
–30
–40
10k
1M
FREQUENCY (Hz)
100k
1M
10M
100M
FREQUENCY (Hz)
Figure 14. Power-Supply Rejection vs. Frequency
Figure 17. Noninverting Gain vs. Capacitive Loads
Rev. F | Page 8 of 20
OP467
4
0
VS = ±15V
VS = ±15V
VIN = ±5V
CL = 50pF
3
–20
2
VOUT ERROR (mV)
–30
–40
–50
–60
–70
1
0
–1
–2
–80
1k
10k
1M
100k
10M
00302-021
–90
–100
100
–3
00302-018
CHANNEL SEPARATION (dB)
–10
–4
100M
0
100
200
Figure 18. Channel Separation vs. Frequency
500
4
±5V ≤ VS ≤ 15V
VS = ±15V
VIN = ±5V
CL = 50pF
3
10
2
VOUT ERROR (mV)
8
6
4
1
0
–1
–2
2
0
10
1
100
00302-022
–3
00302-019
INPUT CURRENT NOISE DENSITY (pA/√Hz)
400
Figure 21. Settling Time, Negative Edge
12
–4
1k
0
100
200
FREQUENCY (Hz)
400
500
Figure 22. Settling Time, Positive Edge
20
100
TA = 25°C
INPUT VOLTAGE RANGE (V)
15
10
1
10
100
1k
10
5
0
–5
–10
00302-023
–15
00302-020
1.0
0.1
300
TIME (ns)
Figure 19. Input Current Noise Density vs. Frequency
VOLTAGE NOISE DENSITY (nV/√Hz)
300
TIME (ns)
FREQUENCY (Hz)
–20
10k
0
FREQUENCY (Hz)
±5
±10
±15
SUPPLY VOLTAGE (V)
Figure 20. Voltage Noise Density vs. Frequency
Figure 23. Input Voltage Range vs. Supply Voltage
Rev. F | Page 9 of 20
±20
OP467
500
50
40
30
VS = ±15V
TA = 25°C
1252 × OP AMPS
VS1 = ±15V
VS2 = ±5V
RL = 10kΩ
CL = 50pF
400
VS1 = ±15V
10
300
UNITS
0
200
–10
VS2 = ±5V
–20
100
00302-024
–30
–40
–50
10k
100k
1M
10M
0
–100
100M
00302-027
GAIN (dB)
20
–50
0
Figure 24. Noninverting Gain vs. Supply Voltage
14
100
150
200
250
300
350
400
350
400
4.5
5.0
Figure 27. Input Offset Voltage Distribution
500
VS = ±5V
TA = 25°C
1252 × OP AMPS
VS = ±15V
TA = 25°C
400
10
8
POSITIVE
SWING
300
UNITS
OUTPUT SWING (V)
12
50
INPUT OFFSET VOLTAGE (VOS µV)
FREQUENCY (Hz)
6
200
NEGATIVE
SWING
4
00302-025
0
10
100
1k
0
–100
10k
00302-028
100
2
–50
Figure 25. Output Swing vs. Load Resistance
5
50
100
150
200
250
300
Figure 28. Input Offset Voltage Distribution
500
VS = ±15V
TA = 25°C
VS = ±15V
TA = 25°C
1252 × OP AMPS
400
4
POSITIVE
SWING
300
UNITS
3
NEGATIVE
SWING
2
200
0
10
100
1k
10k
LOAD RESISTANCE (Ω)
0
00302-029
100
1
00302-026
OUTPUT SWING (V)
0
INPUT OFFSET VOLTAGE (VOS µV)
LOAD RESISTANCE (Ω)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TC VOS (µV/°C)
Figure 26. Output Swing vs. Load Resistance
Figure 29. TC VOS Distribution
Rev. F | Page 10 of 20
4.0
OP467
500
400
VS = ±5V
TA = 25°C
1252 × OP AMPS
350
400
VS = ±5V
RL = 2kΩ
AVCL = +1
SLEW RATE (V/µs)
300
UNITS
300
200
200
+SR
150
100
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
–SR
0
–75
5.0
00302-033
50
00302-030
0
250
–50
–25
TC VOS (µV/°C)
Figure 30. TC VOS Distribution
29.0
28.0
ФM
45
27.5
25
50
75
27.0
125
100
VS = ±15V
RL = 2kΩ
AVCL = –1
100
125
500
+SR
450
400
350
300
250
–75
–50
–25
0
25
50
75
TEMPERATURE (°C)
Figure 31. Phase Margin and Gain Bandwidth vs. Temperature
Figure 34. Slew Rate vs. Temperature
400
400
VS = ±5V
RL = 2kΩ
AVCL = –1
VS = ±15V
RL = 2kΩ
AVCL = +1
350
300
–SR
200
+SR
150
+SR
250
200
–SR
150
100
50
50
00302-032
100
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
0
–75
00302-035
SLEW RATE (V/µs)
300
250
0
–75
125
–SR
TEMPERATURE (°C)
350
100
00302-034
50
0
75
550
SLEW RATE (V/µs)
VS = ±5V
RL = 2kΩ
600
GAIN BANDWIDTH PRODUCT (MHz)
28.5
–25
50
650
00302-031
55
SLEW RATE (V/µs )
PHASE MARGIN (Degrees)
GBW
–50
25
Figure 33. Slew Rate vs. Temperature
60
40
–75
0
TEMPERATURE (°C)
–50
–25
0
25
50
75
TEMPERATURE (°C)
Figure 32. Slew Rate vs. Temperature
Figure 35. Slew Rate vs. Temperature
Rev. F | Page 11 of 20
100
125
OP467
5
6
3
0.1%
4
2
2
1
0
0
–5
–2
–4
–4
0.1%
–3
–6
0.1%
–8
–10
0
100
VS = ±15V
–2
200
300
160
INPUT BIAS CURRENT (nA)
0.1%
200
4
OUTPUT STEP FOR ±5V SUPPLY (V)
OUTPUT STEP FOR ±15V SUPPLY (V)
8
00302-036
RF = 5kΩ
TA = 25°C
–1
400
120
90
40
0
–75
00302-038
10
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
SETTLING TIME (ns)
Figure 36. Output Step vs. Settling Time
Figure 38. Input Bias Current vs. Temperature
25
VS = ±15V
10
INPUT OFFSET CURRENT (nA)
TA = +125°C
TA = +25°C
6
TA = –55°C
4
15
10
5
0
0
±5
±10
±15
±20
0
–75
00302-039
2
00302-037
SUPPLY CURRENT (mA)
8
20
–50
–25
0
25
50
75
100
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Figure 37. Supply Current vs. Supply Voltage
Figure 39. Input Offset Current vs. Temperature
Rev. F | Page 12 of 20
125
OP467
APPLICATIONS INFORMATION
OUTPUT SHORT-CIRCUIT PERFORMANCE
To achieve a wide bandwidth and high slew rate, the OP467
output is not short-circuit protected. Shorting the output to
ground or to the supplies may destroy the device.
For safe operation, the output load current should be limited so
that the junction temperature does not exceed the absolute
maximum junction temperature.
The maximum internal power dissipation can be calculated by
TJ max − TA
θ JA
where:
TJ and TA are junction and ambient temperatures, respectively.
PD is device internal power dissipation.
θJA is the packaged device thermal resistance given in the data sheet.
UNUSED AMPLIFIERS
It is recommended that any unused amplifiers in the quad
package be connected as a unity-gain follower with a 1 kΩ
feedback resistor with noninverting input tied to the ground plain.
PRINTED CIRCUIT BOARD (PCB) LAYOUT
CONSIDERATIONS
Satisfactory performance of a high speed op amp largely
depends on a good PCB layout. To achieve the best dynamic
performance, follow the high frequency layout technique.
On the other hand, ceramic chip capacitors have excellent ESR
and effective series inductance (ESL) performance at higher
frequencies, and because of their small size, they can be placed
very close to the device pin, further reducing the stray inductance.
Best results are achieved by using a combination of these two
capacitors. A 5 μF to 10 μF tantalum parallel capacitor with a
0.1 μF ceramic chip capacitor is recommended. If additional
isolation from high frequency resonances of the power supply is
needed, a ferrite bead should be placed in series with the supply
lines between the bypass capacitors and the power supply. Note
that addition of the ferrite bead introduces a new pole and zero
to the frequency response of the circuit and could cause unstable
operation if it is not selected properly.
+VS
+
GROUNDING
10µF TANTALUM
0.1µF CERAMIC CHIP
A good ground plain is essential to achieve the optimum
performance in high speed applications. It can significantly
reduce the undesirable effects of ground loops and IR drops by
providing a low impedance reference point. Best results are
obtained with a multilayer board design with one layer assigned
to the ground plain. To maintain a continuous and low impedance
ground, avoid running any traces on this layer.
POWER SUPPLY CONSIDERATIONS
0.1µF CERAMIC CHIP
10µF TANTALUM
–VS
00302-040
PD =
A practical solution to this problem is to reduce the resonance
frequency low enough to take advantage of the power supply
rejection of the amplifier. This is easily done by placing
capacitors across the supply line and the ground plane as close
as possible to the device pin. Because capacitors also have
internal parasitic components, such as stray inductance,
selecting the right capacitor is important. To be effective, they
should have low impedance over the frequency range of
interest. Tantalum capacitors are an excellent choice for their
high capacitance/size ratio, but their effective series resistance
(ESR) increases with frequency making them less effective.
Figure 40. Recommended Power Supply Bypass
SIGNAL CONSIDERATIONS
For proper operation, the positive supply must be sequenced on
before the negative supply. All users should take steps to ensure
this. In high frequency circuits, device lead length introduces an
inductance in series with the circuit. This inductance, combined
with stray capacitance, forms a high frequency resonance circuit.
Poles generated by these circuits cause gain peaking and additional
phase shift, reducing the phase margin of the op amp and leading
to an unstable operation.
Input and output traces need special attention to assure a
minimum stray capacitance. Input nodes are very sensitive to
capacitive reactance, particularly when connected to a high
impedance circuit. Stray capacitance can inject undesirable
signals from a noisy line into a high impedance input. Protect
high impedance input traces by providing guard traces around
them, which also improves the channel separation significantly.
Additionally, any stray capacitance in parallel with the input
capacitance of the op amp generates a pole in the frequency
response of the circuit. The additional phase shift caused by this
pole reduces the gain margin of the circuit. If this pole is within
the gain range of the op amp, it causes unstable performance. To
reduce these undesirable effects, use the lowest impedance
where possible. Lowering the impedance at this node places the
poles at a higher frequency, far above the gain range of the
Rev. F | Page 13 of 20
OP467
amplifier. Stray capacitance on the PCB can be reduced by making
the traces narrow and as short as possible. Further reduction
can be realized by choosing a smaller pad size, increasing the
spacing between the traces, and using PCB material with a low
dielectric constant insulator (dielectric constant of some common
insulators: air = 1, Teflon® = 2.2, and FR4 = 4.7, with air being
an ideal insulator).
DLY 9.824µs
100
90
Removing segments of the ground plane directly under the
input and output pads is recommended.
10
Outputs of high speed amplifiers are very sensitive to capacitive
loads. A capacitive load introduces a pair of pole and zero to the
frequency response of the circuit, reducing the phase margin,
leading to unstable operation or oscillation.
5V
5V
00302-042
0%
20ns
Figure 42. Saturation Recovery Time, Positive Rail
Generally, it is good design practice to isolate the output of the
amplifier from any capacitive load by placing a resistor between
the output of the amplifier and the rest of the circuits. A series
resistor of 10 Ω to 100 Ω is normally sufficient to isolate the
output from a capacitive load.
DLY 4.806µs
100
90
The OP467 is internally compensated to provide stable
operation and is capable of driving large capacitive loads
without oscillation.
PHASE REVERSAL
The OP467 is immune to phase reversal; its inputs can exceed
the supply rails by a diode drop without any phase reversal.
ΔV1
15.8V
100
10
0%
5V
5V
00302-043
Sockets are not recommended because they increase the lead
inductance/capacitance and reduce the power dissipation of the
package by increasing the thermal resistance of the leads. If
sockets must be used, use Teflon or pin sockets with the shortest
possible leads.
20ns
Figure 43. Saturation Recovery Time, Negative Rail
HIGH SPEED INSTRUMENTATION AMPLIFIER
The OP467 performance lends itself to a variety of high speed
applications, including high speed precision instrumentation
amplifiers. Figure 44 represents a circuit commonly used for
data acquisition, CCD imaging, and other high speed
applications.
The circuit gain is set by RG. A 2 kΩ resistor sets the circuit gain
to 2; for unity gain, remove RG. For any other gain settings, use
the following formula
OUTPUT 90
G = 2/RG (Resistor Value is in kΩ)
RC is used for adjusting the dc common-mode rejection, and CC
is used for ac common-mode rejection adjustments.
10
INTPUT 0%
–VIN
200µs
CC
2kΩ
Figure 41. No Phase Reversal (AV = +1)
1kΩ
SATURATION RECOVERY TIME
RG
The OP467 has a fast and symmetrical recovery time from
either rail. This feature is very useful in applications such as
high speed instrumentation and measurement circuits, where
the amplifier is frequently exposed to large signals that overload
the amplifier.
Rev. F | Page 14 of 20
2kΩ
10kΩ
2kΩ
OUTPUT
1kΩ
1.9kΩ
10kΩ
5pF
RC
200Ω
10T
+VIN
Figure 44. A High Speed Instrumentation Amplifier
00302-044
10V
00302-041
10V
OP467
2 MHz BIQUAD BAND-PASS FILTER
0.01% 10V STEP
VS = ±15V
NEG SLOPE
The circuit in Figure 48 is commonly used in medical imaging
ultrasound receivers. The 30 MHz bandwidth is sufficient to
accurately produce the 2 MHz center frequency, as the measured
response shows in Figure 49. When the bandwidth of the op
amp is too close to the center frequency of the filter, the internal
phase shift of the amplifier causes excess phase shift at 2 MHz,
which alters the response of the filter. In fact, if the chosen op
amp has a bandwidth close to 2 MHz, the combined phase shift
of the three op amps causes the loop to oscillate.
2.5mV
00302-045
–2.5mV
Figure 45. Instrumentation Amplifier Settling Time to 0.01% for a
10 V Step Input (Negative Slope)
Careful consideration must be given to the layout of this circuit
as with any other high speed circuit.
If the phase shift introduced by the layout is large enough, it can
alter the circuit performance, or worse, cause oscillation.
0.01% 10V STEP
VS = ±15V
POS SLOPE
R6
1kΩ
C1
50pF
R2
2kΩ
2.5mV
–2.5mV
R1
3kΩ
1/4
OP467
2kΩ
R4
2kΩ
C2
50pF
R3
2kΩ
R5
2kΩ
1/4
OP467
1/4
OP467
00302-046
1/4
OP467
Figure 46. Instrumentation Amplifier Settling Time to 0.01% for a
10 V Step Input (Positive Slope)
00302-048
VOUT
VIN
Figure 48. 2 MHz Biquad Filter
+VS
+
AD9617
2kΩ
1kΩ
–10
ERROR
TO SCOPE
GAIN (dB)
–20
–VS
61.9Ω
549Ω
–30
00302-049
TO
IN-AMP
OUTPUT
0
+
00302-047
TO
INPUT
2kΩ
–40
Figure 47. Settling Time Measurement Circuit
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 49. Biquad Filter Response
Rev. F | Page 15 of 20
100M
OP467
+5V
C1
10pF
2
1
OUT A
OP467
3
+15V
0.1µF
4
OUT B
7
6
OP467
11
5
C2
10pF
+10V
0.1µF
–15V
1
VDD
DAC8408
2
VREF A
3
RFBA
+10V
DGND 28
VREF C 27
RFBC 26
C3
10pF
4
IOUT 1A
IOUT 1C 25
13
5
IOUT 2A/
IOUT 2B
IOUT 2C/
IOUT 2D 24
12
6
IOUT 1B
IOUT 1D 23
7
RFBB
8
VREF B
9
RFBD 22
DB0 (LSB)
DS2 20
DS1 19
11 DB2
R/W 18
12 DB3
A/B 17
13 DB4
(MSB) DB7 16
14 DB5
DB6 15
14
OUT D
OP467
8
OUT C
9
VREF D 21
10 DB1
OP467
C4
10pF
+10V
10
DIGITAL
CONTROL
SIGNALS
00302-050
+10V
Figure 50. Quad DAC Unipolar Operation
FAST I-TO-V CONVERTER
251.0ns
The fast slew rate and fast settling time of the OP467 are well
suited to the fast buffers and I-to-V converters used in a variety
of applications. The circuit in Figure 50 is a unipolar quad DAC
consisting of only two ICs. The current output of the DAC8408
is converted to a voltage by the OP467 configured as an I-to-V
converter. This circuit is capable of settling to 0.1% within 200 ns.
Figure 51 and Figure 52 show the full-scale settling time of the
outputs. To obtain reliable circuit performance, keep the traces
from the IOUT of the DAC to the inverting inputs of the OP467
short to minimize parasitic capacitance.
100
90
10
2V
260.0ns
50mV
100ns
00302-052
0%
Figure 52. Rising Edge Output Settling Time
DAC8408
RFB
100
90
DC OFFSET
3pF
IOUT
2kΩ
I-V
OP467
2kΩ
AD847
1kΩ
50kΩ
60.4kΩ
10
2V
50mV
100ns
00302-051
0%
Figure 53. DAC VOUT Settling Time Circuit
Figure 51. Falling Edge Output Settling Time
Rev. F | Page 16 of 20
00302-053
604Ω
OP467
OP467 SPICE MARCO-MODEL
* Node assignments
noninverting input
inverting input
positive supply
negative supply
output
*
. SUBCKT OP467
1
2
99
50
27
*
* INPUT STAGE
*
I1
4
10E–3
5
0
CIN
1
2
1E–12
IOS
1
2
5E–9
Q1
5
2
8 QN
Q2
6
7
9 QN
R3
99 5
185 . 681
R4
99 6
185 . 681
R5
8
4
180 . 508
R6
9
4
180 . 508
EOS
7
1
POLY (1)
(14,20)
50E–6
EREF
98 0
(20,0) 1
*
* GAIN STAGE AND DOMINANT POLE AT 1.5 kHz
*
R7
10 98
3 . 714E6
C2
10 98
28 . 571E–12
G1
98 10
(5,6) 5 . 386E–3
V1
99 11
1.6
V2
12 50
1.6
D1
10 11
DX
D2
12 10
DX
RC
10 28
1 . 4E3
CC
28 27
12E–12
1
*
* COMMON-MODE STAGE WITH ZERO AT 1.26 kHz
*
ECM
13 98
POLY (2) (1, 20)
(2,20) 0 0. 5 0 . 5
R8
13 14
1E6
R9
14 98
25 . 119
C3
13 14
126 . 721E–12
*
*POLE AT 400E6
*
R10
15
98
1E6
C4
15
98
0 . 398E–15
G2
98
15
(10,20) 1E–6
*
* OUTPUT STAGE
*
ISY
99
50
–8 . 183E–3
RMP1
99
20
96 . 429E3
RMP2
20
50
96 . 429E3
RO1
99
26
200
RO2
26
50
200
L1
26
27
1E–7
GO1
26
99
(99,15) 5E–3
GO2
50
26
(15,50) 5E–3
G4
23
50
(15,26) 5E–3
G5
24
50
(26,15) 5E–3
V3
21
26
50
V4
26
22
50
D3
15
21
DX
D4
22
15
DX
D5
99
23
DX
D6
99
24
DX
D7
50
23
DY
D8
50
24
DY
*
* MODELS USED
*
. MODEL QN NPN (BF=33.333E3)
. MODEL DX D
. MODEL DY D (BV=50)
. ENDS OP467
Rev. F | Page 17 of 20
OP467
99
99
99
D5
RMP1
D3
20
15
21
D4
98
RMP2
G4
N–
27
2
26
22
23
CIN
24
D7
D8
1
R02
G5
N+
G02
50
50
Q2
8
R5
RC
28
7
Rev. F | Page 18 of 20
27
C3
R6
4
–+
EOS
R7
G1
EREF
+
–
C2
98
13
ECM +
–
R8
14
R9
D2
12
V2 +
–
Figure 55. SPICE Macro-Model Input and Gain Stage
Figure 54. SPICE Macro-Model Output Stage
CC
10
9
I1
50
11
D1
6
Q1
IOS
V4
–+
C4
EREF +
–
5
R01
L1
15
R10
G2
V3
+–
+
V1 –
R4
R3
G01
00302-054
ISY
D6
50
00302-055
99
OP467
OUTLINE DIMENSIONS
0.775 (19.69)
0.750 (19.05)
0.735 (18.67)
14
8
1
7
0.280 (7.11)
0.250 (6.35)
0.240 (6.10)
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.100 (2.54)
BSC
0.060 (1.52)
MAX
0.210 (5.33)
MAX
0.015
(0.38)
MIN
0.150 (3.81)
0.130 (3.30)
0.110 (2.79)
SEATING
PLANE
0.015 (0.38)
GAUGE
PLANE
0.430 (10.92)
MAX
0.005 (0.13)
MIN
0.014 (0.36)
0.010 (0.25)
0.008 (0.20)
0.070 (1.78)
0.050 (1.27)
0.045 (1.14)
COMPLIANT TO JEDEC STANDARDS MS-001
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.
Figure 56. 14-Lead Plastic Dual In-Line Package [PDIP]
(N-14)
P-Suffix
Dimensions shown in inches and (millimeters)
0.005 (0.13) MIN
14
1
PIN 1
0.098 (2.49) MAX
8
7
0.310 (7.87)
0.220 (5.59)
0.100 (2.54) BSC
0.785 (19.94) MAX
0.200 (5.08)
MAX
0.200 (5.08)
0.125 (3.18)
0.023 (0.58)
0.014 (0.36)
0.320 (8.13)
0.290 (7.37)
0.060 (1.52)
0.015 (0.38)
0.150
(3.81)
MIN
SEATING
0.070 (1.78) PLANE
0.030 (0.76)
15°
0°
0.015 (0.38)
0.008 (0.20)
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 57. 14-Lead Ceramic Dual In-Line Package [CERDIP]
(Q-14)
Y-Suffix
Dimensions shown in inches and (millimeters)
Rev. F | Page 19 of 20
070606-A
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
0.195 (4.95)
0.130 (3.30)
0.115 (2.92)
OP467
10.50 (0.4134)
10.10 (0.3976)
9
16
7.60 (0.2992)
7.40 (0.2913)
1
8
1.27 (0.0500)
BSC
0.30 (0.0118)
0.10 (0.0039)
COPLANARITY
0.10
0.51 (0.0201)
0.31 (0.0122)
10.65 (0.4193)
10.00 (0.3937)
0.75 (0.0295)
0.25 (0.0098)
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
45°
8°
0°
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
032707-B
COMPLIANT TO JEDEC STANDARDS MS-013- AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 58. 16-Lead Standard Small Outline Package [SOIC_W]
Wide Body (RW-16)
S-Suffix
Dimensions shown in millimeters and (inches)
0.358 (9.09)
0.342 (8.69)
SQ
0.358
(9.09)
MAX
SQ
0.088 (2.24)
0.054 (1.37)
0.200 (5.08)
REF
0.100 (2.54) REF
0.015 (0.38)
MIN
0.075 (1.91)
REF
0.095 (2.41)
0.075 (1.90)
0.011 (0.28)
0.007 (0.18)
R TYP
0.075 (1.91)
REF
0.055 (1.40)
0.045 (1.14)
19
18
3
20
4
0.028 (0.71)
0.022 (0.56)
1
BOTTOM
VIEW
0.050 (1.27)
BSC
8
14
13
9
45° TYP
0.150 (3.81)
BSC
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
022106-A
0.100 (2.54)
0.064 (1.63)
Figure 59. 20-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-20-1) RC-Suffix
Dimensions shown in inches and (millimeters)
ORDERING GUIDE
Model
OP467GP
OP467GPZ 1
OP467GS
OP467GS-REEL
OP467GSZ1
OP467GSZ-REEL1
OP467ARC/883C
OP467AY/883C
OP467GBC
1
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−55°C to +125°C
−55°C to +125°C
Package Description
14-Lead PDIP
14-Lead PDIP
16-Lead SOIC_W
16-Lead SOIC_W
16-Lead SOIC_W
16-Lead SOIC_W
20-Terminal LCC
14-Lead CERDIP
DIE
Z = RoHS Compliant Part.
©2007 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00302-0-5/07(F)
Rev. F | Page 20 of 20
Package Option
N-14
N-14
RW-16
RW-16
RW-16
RW-16
E-20-1
Q-14