Jiangsu CJP08N65 N-channel power mosfet Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N65
N-Channel Power MOSFET
V(BR)DSS
ID
RDS(on)MAX
1.4Ω@10V
650V
TO-220-3L
8A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
recovery time. Desighed for high voltage, high speed switching
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
1 2
3
FEATURE
High Current Rating


Lower RDS(on)
Lower Capacitance

Lower Total Gate Charge


Tighter VSD Specifications
Avalanche Energy Specified

MARKING
CJP08N65
XXX
G
D
EQUIVALENT CIRCUIT
CJP08N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
S
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
±30
Continuous Drain Current
ID
8
Pulsed Drain Current
IDM
32
Single Pulsed Avalanche Energy (note1)
EAS
250
mJ
Thermal Resistance from Junction to Ambient
RθJA
62.5
℃/W
TJ, TSTG
-55 ~+150
TL
260
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
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1
V
A
℃
C,Apr,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
650
V
Drain-source diode forward voltage
VSD
VGS = 0V, IS =8A
1.4
Zero gate voltage drain current
IDSS
VDS =650V, VGS =0V
10
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±30V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
3.5
4.0
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =4A
1.1
1.4
Ω
VDS =50V, ID =3.9A
8.5
On characteristics (note2)
Forward transconductance
gfs
2.0
S
Dynamic characteristics (note 3)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
1255
VDS =25V,VGS =0V,f =1MHz
135
pF
16
Switching characteristics (note 3)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
28
VDS =520V,VGS =10V,ID =8A
36
nC
4.5
12
45
VDD=325V, RG=25Ω, ID =8A
tf
130
170
ns
140
Notes :
1.
L=7mH, IL=8A, VDD=50V, RG=25Ω, Starting TJ=25℃.
2.
Pulse Test: Pulse width≤300µs, duty cycle ≤2%.
3.
These parameters have no way to verify.
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2
C,Apr,2016
7\SLFDO&KDUDFWHULVWLFV
Transfer Characteristics
Output Characteristics
8
8
VGS= 6V、 8V、10V
VDS=50V
Pulsed
VGS=5.5V
DRAIN CURRENT
DRAIN CURRENT
6
Ta=100℃
ID
(A)
6
ID
(A)
Pulsed
4
VGS=5V
4
Ta=25℃
2
2
VGS=4.5V
0
0
10
20
30
DRAIN TO SOURCE VOLTAGE
VDS
0
40
0
(V)
1
2
3
4
5
GATE TO SOURCE VOLTAGE
VGS
6
RDS(ON)—— VGS
RDS(ON) —— ID
8
3.0
Ta=25℃
Pulsed
VGS=10V
( Ω)
6
RDS(ON)
5
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
1.5
Pulsed
ID=4A
7
( Ω)
2.5
2.0
7
(V)
1.0
4
3
Ta=100℃
2
0.5
1
Ta=25℃
0.0
0
2
4
6
DRAIN CURRENT
10
8
ID
0
2
(A)
4
6
10
8
GATE TO SOURCE VOLTAGE
VGS
12
(V)
Threshold Voltage
IS —— VSD
10
5
(V)
4
ID=250uA
VTH
1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
Pulsed
Ta=100℃
0.1
Ta=25℃
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
1.2
VSD (V)
3
2
1
0
25
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
C,Apr,2016
TO-220-3L Package Outline Dimensions
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
h
L
L1
Φ
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Dimensions In Millimeters
Min
Max
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
8.500
8.900
12.060
12.460
2.540 TYP
4.980
5.180
2.590
2.890
0.000
0.300
13.400
13.800
3.560
3.960
3.735
3.935
4
Dimensions In Inches
Min
Max
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.394
0.406
0.335
0.350
0.475
0.491
0.100 TYP
0.196
0.204
0.102
0.114
0.000
0.012
0.528
0.543
0.140
0.156
0.147
0.155
C,Apr,2016
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