AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS 700V@150℃ ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 4.4Ω 100% UIS Tested! 100% Rg Tested! TO251 D Top View Bottom View Bottom View D D G G S S G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C D G S Maximum 600 Units V ±30 V 2 ID 1.4 IDM A 8 Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 120 5 56.8 mJ V/ns W 0.45 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 5: Nov 2010 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 1.8 0.5 2.2 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD2N60/AOU2N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA 700 V o ID=250µA, VGS=0V VDS=600V, VGS=0V V/ C 0.56 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 4.4 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 3.6 gFS Forward Transconductance VDS=40V, ID=1A 3.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current 8 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2A S 215 270 325 pF 23 29 35 pF 2.2 2.8 3.4 pF 3.5 4.4 6.6 Ω 9.5 11 nC 1.9 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 6 nC tD(on) Turn-On DelayTime 17.2 21 ns tr Turn-On Rise Time 14.3 17 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=2A, RG=25Ω 27 32 ns tf trr Turn-Off Fall Time 17 20 ns IF=2A,dI/dt=100A/µs,VDS=100V 154 185 Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 0.8 0.96 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2010 www.aosmd.com Page 2 of 6 AOD2N60/AOU2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 10V -55°C VDS=40V 4 6.5V ID (A) 3 ID(A) 6V 125°C 1 2 1 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 6.5 Normalized On-Resistance 6.0 5.5 RDS(ON) (Ω ) 6 5.0 4.5 4.0 VGS=10V 3.5 VGS=10V ID=1A 2 1.5 1 0.5 3.0 0 1 2 3 4 0 5 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+01 1.0E+00 40 1.1 1 IS (A) BVDSS (Normalized) ID=30A 125°C 125°C 1.0E-01 25°C 1.0E-02 0.9 25°C 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev 5: Nov 2010 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD2N60/AOU2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=2A 12 9 6 100 Coss 10 Crss 3 0 1 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0.1 10 1ms 10ms 0.1s DC 0.1 100 TJ(Max)=150°C TC=25°C 600 100µs Power (W) ID (Amps) 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 800 10µs RDS(ON) limited 1 400 200 TJ(Max)=150°C TC=25°C 0 0.01 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Nov 2010 www.aosmd.com Page 4 of 6 AOD2N60/AOU2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 2.5 2.0 Current rating ID(A) Power Dissipation (W) 50 40 30 20 1.5 1.0 0.5 10 0 0.0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) 400 TJ(Max)=150°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev 5: Nov 2010 www.aosmd.com Page 5 of 6 AOD2N60/AOU2N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 5: Nov 2010 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6