PHOTODIODE 16 ELEMENT AXUV16ELG Dimensions are in inch [metric] units. FEATURES • 40 pin dual in-line package • Ideal for electron detection • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (Per Element) PARAMETERS TEST CONDITIONS MIN 2mm x 5mm Active Area TYP MAX mm2 10 A/W (see graphs on next page) Responsivity, R Reverse Breakdown Voltage, VR IR = 1µA Capacitance, C VR = 0V Rise Time VR = 0V Shunt Resistance (per element) Vf = ±10mV UNITS Volts 25 40 500 100 pF nsec MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 -10° TO 40°C1 Nitrogen or Vacuum -20°C TO 80°C 70°C Maximum Junction Temperature Lead soldering temperature 2 260°C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 2 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 16 ELEMENT RESPONSIVITY (A/W) 0.30 AXUV16ELG ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013