MUR10100, MUR10120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 MUR10100 MUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 35 10 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 40 A 6.9 mJ 0.8 A EAS IAR o TVJ=25 C; non-repetitive; IAS=8A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight P1 o C 60 W 0.4...0.6 Nm 2 g typical ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR10100, MUR10120 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 60 0.25 uA mA VF IF=10A; TVJ=150oC TVJ=25oC 1.96 2.94 V RthJC RthCH 2.5 0.5 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC trr o VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C IRM K/W 40 ns 4 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch P2 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR10100, MUR10120 Ultra Fast Recovery Diodes 30 2000 IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V A 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 150 2.0 Kf Qr 90 40 us tfr VFR 80 0.8 40 0.4 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 110 0.5 1.2 V 120 IRM 600 A/us 800 1000 -diF/dt TVJ= 100°C IF = 10A VFR 130 1.0 400 Fig. 3 Peak reverse current IRM versus -diF/dt 140 trr 1.5 200 120 TVJ= 100°C VR = 600V ns 0 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/us 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 s 0.1 1 t Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com