BCD AP2111M-1.2G1 600ma cmos ldo regulator with enable Datasheet

Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
General Description
Features
The AP2111 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 600mA (Min) continuous load current.
•
•
•
•
•
The AP2111 provides 1.2V, 1.8V, 2.5V, 3.3V, 4.8V
regulated output and 0.8V to 5V adjustable output,
and provides excellent output accuracy 1.5%, it is
also provides a excellent load regulation, line
regulation and excellent load transient performance
due to very fast loop response. The AP2111 has
built-in auto discharge function.
•
•
•
•
•
•
•
•
The AP2111 features low power consumption.
The AP2111 is available in SOIC-8, PSOP-8
SOT-223 and SOT-23-5 packages.
•
•
AP2111
Output Voltage Accuracy: ±1.5%
Output Current: 600mA (Min)
Foldback Short Current Protection: 50mA
Enable Function to Turn On/Off VOUT
Low Dropout Voltage (3.3V):
250mV (Typ) @ IOUT=600mA
Excellent Load Regulation: 0.2%/A (Typ)
Excellent Line Regulation: 0.02%/V (Typ)
Low Quiescent Current: 55μA (Typ)
Low Standby Current: 0.01μA (Typ)
Low Output Noise: 50μVRMS
PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz
OTSD Protection
Stable with 1.0μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
Operating Temperature Range: -40°C to 85°C
ESD: MM 400V, HBM 4000V
Applications
•
•
•
Laptop computer
Potable DVD
LCD Monitor
SOIC-8
PSOP-8
SOT-223
SOT-23-5
Figure 1. Package Types of AP2111
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
1
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Pin Configuration
M Package
MP Package
(SOIC-8)
(PSOP-8)
H Package
K Package
(SOT-223)
(SOT-23-5)
1
5
2
3
4
Figure 2. Pin Configuration of AP2111 (Top View)
Pin Descriptions
Pin Number
SOIC-8/PSOP-8
SOT-223
Pin Name
4
3
3
VIN
2
2
4
VOUT
1
EN
2
GND
5
ADJ/NC
8
1, 3, 5, 6, 7
May 2012
SOT-23-5
1
Function
Input voltage
Output voltage
Chip enable, H – normal work, L – shutdown output
Rev. 1. 5
Ground
Adjust output for ADJ version/No connected for
fixed version
BCD Semiconductor Manufacturing Limited
2
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Functional Block Diagram
A (B)
A: SOIC-8/PSOP-8
B: SOT-223
Figure 3. Functional Block Diagram of AP2111 for Fixed Version
EN
1
3
UVLO &
Shutdown Logic
VIN
Foldback
Current Limit
Thermal
Shutdown
4
VOUT
3m
5
ADJ/NC
VREF
2
GND
SOT-23-5
Figure 4. Functional Block Diagram of AP2111 for Adjustable Version
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
3
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Ordering Information
AP2111
G1: Green
Blank: Tube
TR: Tape & Reel
Circuit Type
Package
M: SOIC-8
MP: PSOP-8
H: SOT-223
K: SOT-23-5
Package
SOIC-8
PSOP-8
SOT-223
SOT-23-5
Temperature
Range
-40 to 85°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
1.2: Fixed Output 1.2V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
4.8: Fixed Output 4.8V
ADJ: Adjustable Output
Part Number
Marking ID
Packing Type
AP2111M-1.2G1
2111M-1.2G1
Tube
AP2111M-1.2TRG1
2111M-1.2G1
Tape & Reel
AP2111M-1.8G1
2111M-1.8G1
Tube
AP2111M-1.8TRG1
2111M-1.8G1
Tape & Reel
AP2111M-2.5G1
2111M-2.5G1
Tube
AP2111M-2.5TRG1
2111M-2.5G1
Tape & Reel
AP2111M-3.3G1
2111M-3.3G1
Tube
Tape & Reel
AP2111M-3.3TRG1
2111M-3.3G1
AP2111MP-1.2G1
2111MP-1.2G1
Tube
AP2111MP-1.2TRG1
2111MP-1.2G1
Tape & Reel
AP2111MP-1.8G1
2111MP-1.8G1
Tube
AP2111MP-1.8TRG1
2111MP-1.8G1
Tape & Reel
AP2111MP-2.5G1
2111MP-2.5G1
Tube
AP2111MP-2.5TRG1
2111MP-2.5G1
Tape & Reel
AP2111MP-3.3G1
2111MP-3.3G1
Tube
AP2111MP-3.3TRG1
2111MP-3.3G1
Tape & Reel
AP2111H-1.2TRG1
GH11B
Tape & Reel
AP2111H-1.8TRG1
GH11G
Tape & Reel
AP2111H-2.5TRG1
GH11H
Tape & Reel
AP2111H-3.3TRG1
GH11C
Tape & Reel
AP2111H-4.8TRG1
GH13D
Tape & Reel
AP2111K-ADJG1
G3Q
Tube
AP2111K-ADJTRG1
G3Q
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
4
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
VIN
6.5
V
Power Supply Voltage
Operating Junction Temperature
Range
Storage Temperature Range
TJ
150
ºC
TSTG
-65 to 150
ºC
Lead Temperature (Soldering, 10sec)
TLEAD
260
ºC
Thermal Resistance (No Heatsink)
θJA
SOIC-8
144
PSOP-8
143
SOT-223
128
SOT-23-5
250
ºC/W
ESD (Machine Model)
400
V
ESD (Human Body Model)
4000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient
Range
May 2012
Temperature
Symbol
Min
VIN
TA
Rev. 1. 5
Typ
Max
Unit
2.5
6.0
V
-40
85
°C
BCD Semiconductor Manufacturing Limited
5
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics
AP2111-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output
Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Symbol
VOUT
IOUT(Max)
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
VDROP
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
(△VOUT/VOUT)
△T
Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
VIN=2.5V, VOUT=1.182V to 1.218V
Min
Typ
Max
Unit
VOUT
×98.5%
1.2
VOUT
×101.5%
V
600
mA
VIN=2.5V, 1mA ≤ IOUT ≤600mA
0.2
%/A
2.5V≤VIN≤6V, IOUT=30mA
0.02
%/V
IOUT =10mA
1000
1300
IOUT =300mA
1000
1300
IOUT=600mA
1000
1300
55
80
μA
0.01
1.0
μA
VIN=2.5V, IOUT=0mA
VIN=2.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz
65
f=1kHz
65
IOUT=30mA
TA=-40°C to 85°C
mV
dB
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
EN Pull Down Resistor
VOUT
Discharge
Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
tS
No Load
RPD
RDCHG
Set EN pin at Low
20
μs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
30
θJC
V
°C
SOIC-8
PSOP-8
SOT-223
74.6
43.7
50.9
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
6
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-1.8 Electrical Characteristic (Note 2)
VIN=2.8V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Conditions
Min
Typ
Max
Unit
VOUT
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
VOUT
×98.5%
1.8
VOUT
×101.5%
V
IOUT(Max)
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)
△T
VIN=2.8V,
VOUT=1.773V to 1.827V
VIN=VOUT+1V,
VOUT=1.8V,
1mA ≤ IOUT ≤600mA
600
mA
0.2
%/A
2.8V≤VIN≤6V, IOUT=30mA
0.02
%/V
IOUT =10mA
500
700
IOUT =300mA
500
700
IOUT=600mA
500
700
VIN=2.8V, IOUT=0mA
55
80
μA
0.01
1.0
μA
VIN=2.8V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=2.8V,
IOUT=100mA
f=100Hz
65
f=1kHz
65
mV
dB
IOUT=30mA
TA=-40°C to 85°C
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
tS
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
RPD
RDCHG
Set EN pin at Low
20
μs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
30
θJC
V
°C
SOIC-8
PSOP-8
SOT-223
74.6
43.7
50.9
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
7
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Conditions
Min
Typ
Max
Unit
VOUT
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
VOUT
×98.5%
2.5
VOUT
×101.5%
V
IOUT(Max)
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)
△T
VIN=3.5V, VOUT=2.463V to
2.537V
VIN=VOUT+1V,
VOUT=2.5V,
1mA ≤ IOUT ≤600mA
600
3.5V≤VIN≤6V, IOUT=30mA
mA
0.2
%/A
0.02
%/V
IOUT =10mA
5
8
IOUT =300mA
125
200
IOUT=600mA
250
400
VIN=3.5V, IOUT=0mA
55
80
μA
0.01
1.0
μA
VIN=3.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
65
f=1kHz
65
mV
dB
IOUT=30mA
TA=-40°C to 85°C
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
tS
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
RPD
RDCHG
Set EN pin at Low
20
μs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
30
θJC
V
°C
SOIC-8
PSOP-8
SOT-223
74.6
43.7
50.9
°C /W
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
8
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Symbol
Conditions
Min
Typ
Max
Unit
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
VOUT
×98.5%
3.3
VOUT
×101.5%
V
IOUT(Max)
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
Load Regulation
Line Regulation
Dropout Voltage
VDROP
Quiescent Current
Standby Current
IQ
ISTD
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
PSRR
(△VOUT/VOUT)
△T
VIN=4.3V,
3.350V
VOUT=3.251V
to
600
mA
VIN=4.3V, 1mA ≤ IOUT ≤600mA
0.2
%/A
4.3V≤VIN≤6V, IOUT=30mA
0.02
%/V
IOUT =10mA
5
8
IOUT =300mA
125
200
IOUT=600mA
250
400
VIN=4.3V, IOUT=0mA
55
80
μA
0.01
1.0
μA
VIN=4.3V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz
65
f=1kHz
65
mV
dB
IOUT=30mA
TA=-40°C to 85°C
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
tS
EN Pull Down Resistor
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
Thermal Resistance
(Junction to Case)
No Load
RPD
RDCHG
Set EN pin at Low
20
μs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
30
θJC
V
°C
SOIC-8
PSOP-8
SOT-223
74.6
43.7
50.9
°C /W
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223)
VIN=5.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Output Voltage
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Standby Current
Power Supply Rejection
Ratio
Output Voltage
Temperature Coefficient
Symbol
Conditions
Min
Typ
Max
Unit
VOUT
VIN =5.5V, 1mA ≤ IOUT ≤ 30mA
VOUT
×98.5%
4.8
VOUT
×101.5%
V
IOUT(Max)
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
VDROP
IQ
ISTD
PSRR
(△VOUT/VOUT)
△T
VIN=5.5V,
4.850V
VOUT=4.751V
to
600
mA
VIN=5.5V, 1mA ≤ IOUT ≤600mA
0.2
%/A
5.5V≤VIN≤6V, IOUT=30mA
0.02
%/V
IOUT =10mA
5
8
IOUT =300mA
100
200
IOUT=600mA
200
400
VIN=5.5V, IOUT=0mA
55
80
μA
0.01
1.0
μA
VIN=5.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=5.5V,
IOUT=100mA
f=100Hz
65
f=1kHz
65
mV
dB
IOUT=30mA
TA=-40°C to 85°C
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
TOTSD
160
THYOTSD
30
θJC
SOT-223
°C
50.9
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
10
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C
ranges, unless otherwise specified (Note 3).
Parameter
Symbol
Reference Voltage
VREF
Maximum Output
Current
IOUT(Max)
Load Regulation
Line Regulation
Quiescent Current
(△VOUT/VOUT)
△IOUT
(△VOUT/VOUT)
△VIN
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
(△VOUT/VOUT)
△T
Conditions
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
VIN=2.5V, VREF=0.788V to 0.812V
Min
Typ
Max
Unit
VREF
×98.5%
0.8
VREF
×101.5%
V
600
mA
VIN=2.5V, 1mA ≤ IOUT ≤600mA
0.2
%/A
2.5V≤VIN≤6V, IOUT=30mA
0.02
%/V
VIN=2.5V, IOUT=0mA
VIN=2.5V, VEN in OFF mode
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
55
80
μA
0.01
1.0
μA
f=100Hz
65
f=1kHz
65
IOUT=30mA
TA=-40°C to 85°C
dB
±100
ppm/°C
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
μVRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
Start-up Time
EN Pull Down Resistor
VOUT
Discharge
Resistor
Thermal
Shutdown
Temperature
Thermal
Shutdown
Hysteresis
Thermal Resistance
(Junction to Case)
tS
No Load
RPD
RDCHG
Set EN pin at Low
20
μs
3.0
mΩ
60
Ω
TOTSD
160
THYOTSD
30
θJC
V
°C
SOT-23-5
150
°C /W
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
11
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
1.6
4.0
1.4
3.5
1.2
3.0
Output Voltage (V)
Output Voltage (V)
Typical Performance Characteristics
1.0
0.8
No Load
o
TA=-40 C
0.6
2.5
2.0
No Load
1.5
o
TA=-40 C
o
TA=25 C
0.4
o
TA=25 C
1.0
o
TA=85 C
0.2
o
VOUT=1.2V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
TA=85 C
0.5
0.0
0.0
6.0
VOUT=3.3V
0.5
1.0
1.5
2.0
Input Voltage (V)
Figure 5. Output Voltage vs. Input Voltage
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 6. Output Voltage vs. Input Voltage
5.0
70
68
VOUT=4.8V
4.5
Quiescent Current (μA)
TA=25 C
4.0
3.5
3.0
2.5
2.0
IOUT=0mA
1.5
IOUT=100mA
1.0
IOUT=300mA
0.5
IOUT=600mA
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
64
62
60
58
56
54
52
50
48
6.0
46
-40
-20
0
20
40
60
80
o
Input Voltage (V)
Temperature ( C)
Figure 7. Output Voltage vs. Input Voltage
May 2012
VIN=2.5V
No Load
66
O
Output Voltage (V)
2.5
Input Voltage (V)
Figure 8. Quiescent Current vs. Temperature
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
12
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Typical Performance Characteristics (Continued)
1.210
VIN=2.5V
70
Output Voltage (V)
Quiescent Current (μA)
CIN=1μF
1.208
60
50
40
30
No Load
20
COUT=1μF
1.206
1.204
IOUT=10mA
IOUT=100mA
o
TA=-40 C
1.202
o
10
TA=25 C
IOUT=300mA
IOUT=600mA
o
TA=85 C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.200
-40
6.0
-20
0
20
40
60
80
o
Temperature ( C)
Input Voltage (V)
Figure 9. Quiescent Current vs. Input Voltage
Figure 10. Output Voltage vs. Temperature
1.3
1.2
3.35
Output Voltage (V)
3.33
1.1
CIN=1μF
1.0
Output Voltage (V)
3.34
VIN=4.3V
COUT=1μF
3.32
3.31
3.30
3.29
0.9
0.8
0.7
0.6
0.5
0.4
VIN=2.5V
3.28
IOUT=10mA
0.3
3.27
IOUT=100mA
0.2
IOUT=300mA
0.1
TA=25 C
IOUT=600mA
0.0
TA=85 C
3.26
3.25
-40
o
o
-0.1
-20
0
20
40
60
80
0.0
o
Temperature ( C)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Output Current (A)
Figure 11. Output Voltage vs. Temperature
May 2012
o
TA= -40 C
Figure 12. Output Voltage vs. Output Current
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
13
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Typical Performance Characteristics (Continued)
1.2
4.0
VIN=2.0V
3.5
Output Voltage (V)
Output Voltage (V)
3.0
2.5
2.0
1.5
1.0
VIN=2.5V
0.8
VIN=5.5V
VIN=5.0V
VIN=6.0V
0.6
0.4
VIN=4.3V
1.0
o
o
TA=-40 C
0.5
TA=25 C
0.2
CIN=1μF
o
TA= 25 C
0.0
-0.5
0.0
o
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
COUT=1μF
0.0
TA= 85 C
1.0
0.0
0.1
0.2
0.3
Output Current (A)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Output Current (A)
Figure 13. Output Voltage vs. Output Current
Figure 14. Output Voltage vs. Output Current
5.0
4.0
4.5
3.5
VOUT=4.8V
4.0
VIN=4.0V
3.5
VIN=4.3V
2.5
Output Voltage (V)
Output Voltage (V)
3.0
VIN=5.0V
2.0
VIN=5.5V
VIN=6.0V
1.5
1.0
o
TA=25 C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VIN=5.0V
1.5
VIN=5.3V
VIN=5.5V
VIN=6.0V
0.0
0.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Output Current (A)
Output Current (A)
Figure 15. Output Voltage vs. Output Current
May 2012
2.0
0.5
0.0
0.0
2.5
1.0
CIN=1μF
COUT=1μF
0.5
3.0
Figure 16. Output Voltage vs. Output Current
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
14
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Typical Performance Characteristics (Continued)
350
350
VOUT=4.8V
300
o
TA=-40 C
O
TA=-40 C
o
250
TA= 25 C
o
TA= 85 C
200
150
100
TA=25 C
O
TA=85 C
200
150
100
50
50
0
0.0
O
250
Dropout Voltage (V)
Dropout Voltage (mV)
300
VOUT=3.3V
0.1
0.2
0.3
0.4
0.5
0
0.0
0.6
0.1
0.2
Output Current (A)
0.3
0.4
0.5
0.6
Output Current (A)
Figure 17. Dropout Voltage vs. Output Current
Figure 18. Dropout Voltage vs. Output Current
260
Ground Current (μA)
220
70
VIN=4.3V
o
65
TA=-40 C
o
200
TA= 25 C
180
TA= 85 C
60
o
PSRR (dB)
240
160
140
120
100
55
50
VIN=2.5V
45
Ripple=0.5V
VOUT=1.2V
40
80
IOUT=10mA
IOUT=100mA
35
IOUT=300mA
60
30
40
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 19. Ground Current vs. Output Current
May 2012
20
100
1k
10k
100k
Frequency (Hz)
Output Current (A)
Figure 20. PSRR vs. Frequency
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
15
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Typical Performance Characteristics (Continued)
Figure 21. Load Transient
Figure 22. Enable On
Figure 23. Enable Off
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
16
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Typical Application (Note 4)
Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as
input/output capacitors.
Figure 24. Typical Application of AP2111
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
17
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Mechanical Dimensions
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.800(0.031)
0.300(0.012)
R0.150(0.006)
0.100(0.004)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.190(0.007)
0.250(0.010)
1°
5°
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
18
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Mechanical Dimensions (Continued)
Unit: mm(inch)
3.202(0.126)
3.402(0.134)
PSOP-8
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
19
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Mechanical Dimensions (Continued)
Rev. 1. 5
Unit: mm(inch)
3.700(0.146)
3.300(0.130)
6.700(0.264)
May 2012
7.300(0.287)
SOT-223
BCD Semiconductor Manufacturing Limited
20
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.950(0.037)
TYP
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
May 2012
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
21
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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the right
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any liability
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or use
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