BLF571 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 20 27.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: u Average output power = 20 W u Power gain = 27.5 dB u Efficiency = 70 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (10 MHz to 500 MHz) n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Industrial, scientific and medical applications n Broadcast transmitter applications BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF571 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 110 V VGS gate-source voltage −0.5 +11 V ID drain current - 3.6 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 20 W 2.9 BLF571_2 Product data sheet K/W © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 2 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.25 mA 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 25 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 50 mA 1.25 1.75 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 3.0 3.6 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 1.25 A - 1.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 833 mA - 1.34 - Ω Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.18 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 22.9 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 9.64 - pF Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Gp power gain PL = 20 W 25.5 27.5 29.5 dB RLin input return loss PL = 20 W 10 13 - dB ηD drain efficiency PL = 20 W 67 70 - % BLF571_2 Product data sheet Typ Max Unit © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 3 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj172 50 Coss (pF) 40 30 20 10 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 20 W; f = 225 MHz. 7. Application information 7.1 Impedance information Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f ZS ZL MHz Ω Ω 225 9.7 + j31.5 31.7 + j29.3 drain ZL gate ZS 001aaf059 Fig 2. Definition of transistor impedance BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 4 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj173 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 10 (7) (8) (9) (10) (11) 1 0 0.4 0.8 1.2 1.6 IDS(DC) (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 3. BLF571 electromigration BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 5 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aaj174 30 80 ηD (%) Gp (dB) Gp (dB) 60 28 26 40 26 24 20 24 0 22 28 Gp 001aaj175 30 ηD 22 0 5 10 15 20 25 PL (W) 30 (5) (4) (3) (2) (1) 0 VDS = 50 V; IDq = 50 mA; f = 225 MHz. 5 10 15 20 25 PL (W) 30 VDS = 50 V; f = 225 MHz. (1) IDq = 20 mA (2) IDq = 40 mA (3) IDq = 50 mA (4) IDq = 60 mA (5) IDq = 80 mA Fig 4. Power gain and drain efficiency as function of load power; typical values Fig 5. Power gain as a function of load power; typical values BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 6 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj176 50 PL (dBm) 48 ideal PL 46 (2) 44 (1) PL 42 40 13 15 17 19 21 Pi (dBm) VDS = 50 V; IDq = 50 mA; f = 225 MHz. (1) PL(1dB) = 43.3 dBm (21.4 W) (2) PL(3dB) = 44 dBm (25.1 W) Fig 6. Load power as function of input power; typical values 8.1.2 2-Tone CW 001aaj177 30 ηD (%) Gp (dB) 28 IMD3 (dBc) 60 Gp 26 001aaj178 0 80 −20 40 ηD (1) (2) (3) (4) (5) −40 24 20 22 0 0 10 20 −60 30 0 PL(PEP) (W) VDS = 50 V; IDq = 50 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. 10 20 30 PL(PEP) (W) VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 20 mA (2) IDq = 40 mA (3) IDq = 50 mA (4) IDq = 60 mA (5) IDq = 80 mA Fig 7. Power gain and drain efficiency as function of peak envelope load power; typical values Fig 8. Third order intermodulation distortion as a function of peak envelope load power; typical values BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 7 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 8.2 Test circuit Table 9. List of components All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10. Component Description Value Remarks C1, C3, C4, C5, C14 multilayer ceramic chip capacitor 100 pF [1] C2 multilayer ceramic chip capacitor 39 pF [1] C6 multilayer ceramic chip capacitor 68 pF [1] C7, C9 multilayer ceramic chip capacitor 1 nF [1] C8 multilayer ceramic chip capacitor 4.7 µF C10 multilayer ceramic chip capacitor 8.2 pF C11 electrolytic capacitor C12 multilayer ceramic chip capacitor 33 pF [1] C13 multilayer ceramic chip capacitor 15 pF [1] L1 1 turn enamelled copper wire D = 5.5 mm; d = 1 mm; length = 1 mm L2 2 turns enamelled copper wire D = 3.5 mm; d = 1 mm; length = 3 mm L3 5 turns enamelled copper wire D = 6 mm; d = 1 mm; length = 5 mm L4 3.3 turns enamelled copper wire D = 3 mm; d = 1 mm; length = 4 mm L5 3 turns enamelled copper wire D = 3 mm; d = 1 mm; length = 3 mm L6 stripline - [2] (L × W) 16.5 mm × 2.4 mm L7, L8, L10, stripline L11, L17, L19, L20 - [2] (L × W) 3.0 mm × 5.0 mm L9 stripline - [2] (L × W) 43.0 mm × 2.4 mm L12, L15 stripline - [2] (L × W) 3.5 mm × 2.4 mm - [2] (L × W) 8.0 mm × 8.0 mm - [2] (L × W) 3.0 mm × 5.9 mm (L × W) 27.0 mm × 2.4 mm (L × W) 28.5 mm × 2.4 mm L13, L14 L16 stripline stripline TDK C4532X7R1E475MT020U or equivalent [1] 220 µF L18 stripline - [2] L21 stripline - [2] R1 metal film resistor 1000 Ω; 0.6 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 8 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor VGG C11 C7 C9 R1 input 50 Ω C1 L7 L6 L1 L8 C3 C4 L3 L10 L2 L11 L9 L16 L4 L17 L13 C2 VDD C8 C5 L12 C6 L19 L5 L20 L18 L21 C14 output 50 Ω L14 L15 C10 C12 C13 001aaj179 Fig 9. Class-AB common-source production test circuit C11 C8 C7 C9 R1 L1 C1 L3 L2 C2 C3 C4 3 mm 5.5 mm C5 C6 L5 L4 C12 C10 9 mm 6.5 mm NXP BLF571 225 MHz INPUT PCB REV1 C14 C13 5 mm NXP BLF571 225 MHz OUTPUT PCB REV2 001aaj180 Fig 10. Component layout for class-AB production test circuit BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 9 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 11. Package outline SOT467C BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 10 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF571_2 20090224 Product data sheet - BLF571_1 Modifications: BLF571_1 • Data sheet status updated from Preliminary to Product 20081211 Preliminary data sheet BLF571_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 11 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 February 2009 12 of 13 BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2009 Document identifier: BLF571_2