BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 225 mWatts Unit: inch (mm) FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .007(.20)MIN .119(3.00) .110(2.80) MECHANICAL DATA .083(2.10) .066(1.70) Case: SOT-23, Plastic .086(2.20) • PNP epitaxial silicon, planar design .006(.15) .002(.05) .006(.15)MAX Device Marking : BC807-16 : 7A .020(.50) .013(.35) .044(1.10) Approx. Weight: 0.008 gram .035(0.90) Terminals: Solderable per MIL-STD-750, Method 2026 BC807-25 : 7B BC807-40 : 7C 3 COLLECTOR Top View 3 Collector 1 BASE 1 Base 2 Emitter 2 EMITTER MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V C EO -45 v Collector-Base Voltage V C BO -50 v Emitter-Base Voltage V EBO -5.0 v IC -500 mA Max Power Dissipation (Note 1) PTOT 225 mW Junction and Storage Temperature Range TJ , TSTG -55 to 150 oC Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT Thermal Resistance , Junction to Ambient RθJA 556 oC /W Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in STAD-SEP.24.2005 PAGE . 1 ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0) V(BR)CEO -45 - - V Collector-Emitter Breakdown Voltage (VEB=0V, Ic=-100uA V(BR)CES -50 - - V Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0) V(BR)EBO -5.0 - - V I EBO - - -100 nA - -0.1 nA I C BO -5.0 uA 100 160 250 - Emitter-Base Cutoff Current (VEB=-4V) O TJ =25 C Collector-Base Cutoff Current (VCB=-20V,IE=0) TJ DC Current Gain (Ic=-100mA,VCE=-1V) =150O C BC807-16 BC807-25 BC807-40 hFE 250 400 600 40 - - (Ic=-500mA,VcE=-1V) - Collector-Emitter Saturation Voltage (Ic=-500mA ,I B=-50mA) VCE(SAT) - - -0.7 V Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) VBE(ON) - - -1.2 V C C BO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (VCB=-10v,I E=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz) ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 150°C TJ = 150°C 100 hFE hFE TJ = 25°C TJ = 25°C 100 TJ = 100°C TJ = 100°C V CE = 1V V CE = 1V 10 0.01 0.1 1 10 100 10 0.01 1000 0.1 Fig. 1. 10 100 1000 Colle ctor Cur r e nt, IC (m A) Colle ctor Cur r e nt, IC (m A) Fig. 2. BC807-16 Typical hFE vs. IC 1000 1 BC807-25 Typical hFE vs. IC 100 TJ = 150°C CIB (EB) 100 Capacitance, C (pF hFE TJ = 25°C TJ = 100°C 10 COB (EB) V CE = 1V 10 0.01 0.1 1 10 100 1000 1 0.1 Colle ctor Curre nt, IC (m A) Fig. 3. STAD-SEP.24.2005 BC807-40 Typical hFE vs. IC 1 10 100 Reverse Voltage, VR (V) Fig. 4. Typical Capacitances PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-SEP.24.2005 PAGE . 3