Boca MJE15029 High frequency drivers in audio amplifier Datasheet

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
MJE15028, MJE15030
MJE15029, MJE15031
Boca Semiconductor Corp.
BSC
MJE15028, 15030
MJE15029, 15031
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
High frequency Drivers in Audio Amplifiers
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
F
DIM
M IN.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
K
All dim insions in m m .
L
N
O
1 2 3
O
A
H
B
C
E
J
D
G
M
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1A; IB = 0.1A
D.C. current gain
IC = 0.1 A; VCE = 2 V
M A X.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
VCBO
VCEO
IC
Ptot
Tj
15028
15029
max. 120
max. 120
max.
max.
max.
15030
15031
150 V
150 V
8.0
A
50
W
150
°C
VCEsat
max.
0.5
hFE
min.
40
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
3
VCBO
VCEO
15028
15029
max. 120
max. 120
V
15030
15031
150 V
150 V
http://www.bocasemi.com
Continental Device India Limited
Data Sheet
Page 1 of 3
MJE15028, MJE15030
MJE15029, MJE15031
Emitter base voltage (open collector)
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Total power dissipation up to TA = 25°C
Derate above 25°C
Junction temperature
Storage temperature
VEBO
IC
IC
IB
Ptot
Tj
T stg
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth j–c
Rth j–a
Ptot
max.
max.
max.
max.
max.
max.
max.
max.
max.
=
=
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 120V
IB = 0; VCE = 150V
IE = 0; VCB = 120V
IE = 0; VCB = 150V
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 10 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 1 A; IB = 0.1 A
Base emitter on voltage
IC = 1A; VCE = 2V
D.C. current gain
IC = 0.1 A; VCE = 2 V
IC = 2 A; VCE = 2 V
IC = 3 A; VCE = 2 V
IC = 4 A; VCE = 2 V
Transition frequency f = 10 MHz
IC = 500 mA; VCE = 10 V
5.0
8.0
16
2.0
50
0.4
2.0
0.016
150
–65 to +150
2.5
62.5
15028
15029
ICEO
ICEO
ICBO
ICBO
max. 0.1
max. –
max. 10
max. –
IEBO
max.
V
A
A
A
W
W/°C
W
W/°C
ºC
ºC
°C/W
°C/W
15030
15031
–
0.1
–
10
10
mA
mA
µA
µA
µA
VCEO(sus)* min. 120
VCBO
min. 120
VEBO
min.
150 V
150 V
5.0
V
VCEsat*
max.
0.5
V
VBE(on)*
max.
1.0
V
hFE*
hFE*
hFE*
hFE*
min.
min.
min.
min.
40
40
40
20
fT (1)
min.
30
MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
http://www.bocasemi.com
Continental Device India Limited
Data Sheet
Page 2 of 3
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