Fairchild FGB40N60SM 600v, 40a field stop igbt Datasheet

FGB40N60SM
tm
600V, 40A Field Stop IGBT
Features
General Description
o
• Maximum Junction Temperature : TJ =175 C
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop 2nd generation IGBTs offer the optimum performance for welding and PFC applications where low conduction
and switching losses are essential.
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
• IR Reflow Only
Applications
• Welding, PFC
C
COLLECTOR
(FLANGE)
G
TO-263AB/D2-PAK
G C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
IC
ICM (1)
PD
TJ
25oC
Collector Current
@ TC =
80
A
Collector Current
@ TC = 100oC
40
A
120
A
Maximum Power Dissipation
@ TC = 25oC
349
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Collector Current
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
174
W
-55 to +175
o
-55 to +175
oC
300
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. A
1
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FGB40N60SM 600V, 40A Field Stop IGBT
November 2011
Symbol
RθJC(IGBT)
Parameter
Typ.
Max.
-
0.43
o
C/W
62.5
o
C/W
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
-
Units
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGB40N60SM
FGB40N60SM
TO-263AB/D2-PAK
-
-
50
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
600
-
-
V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
3.5
4.5
6.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
-
1.9
2.3
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
-
1880
-
pF
-
180
-
pF
-
50
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
12
16
ns
tr
Rise Time
-
20
28
ns
td(off)
Turn-Off Delay Time
-
92
120
ns
tf
Fall Time
-
13
17
ns
Eon
Turn-On Switching Loss
-
0.87
1.30
mJ
Eoff
Turn-Off Switching Loss
-
0.26
0.34
mJ
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
1.13
1.64
mJ
td(on)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-Off Delay Time
-
116
-
ns
tf
Fall Time
-
16
-
ns
Eon
Turn-On Switching Loss
-
0.97
-
mJ
Eoff
Turn-Off Switching Loss
-
0.60
-
mJ
Ets
Total Switching Loss
-
1.57
-
mJ
FGB40N60SM Rev. A
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
2
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FGB40N60SM 600V, 40A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGB40N60SM Rev. A
VCE = 400V, IC = 40A,
VGE = 15V
3
Min.
Typ.
Max
Units
-
119
180
nC
-
13
20
nC
-
58
90
nC
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FGB40N60SM 600V, 40A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
120
o
TC = 25 C
20V
15V
120
12V
o
TC = 175 C
100
10V
80
60
VGE = 8V
40
12V
10V
80
60
VGE = 8V
40
20
20
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 175 C
80
TC = 25 C
Collector Current, IC [A]
100
Collector Current, IC [A]
20V
15V
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
60
40
90 T = 175oC
C
60
30
20
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
0
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Common Emitter
VGE = 15V
80A
2.0
40A
1.5
IC = 20A
1.0
25
4
12
Common Emitter
o
TC = -40 C
16
12
8
40A
80A
4
IC = 20A
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGB40N60SM Rev. A
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
3.0
2.5
2
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGB40N60SM 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
80A
4
IC = 20A
0
o
TC = 175 C
16
12
8
80A
4
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
4000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
3000
Cies
2000
1000
Coes
TC = 25 C
400V
12
VCC = 200V
300V
9
6
3
Cres
0
0
0.1
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
40
80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
300
10µs
100
tr
100µs
1ms
Switching Time [ns]
Collector Current, Ic [A]
120
10 ms
10
DC
1
*Notes:
0.1
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
o
1. TC = 25 C
TC = 25 C
o
o
2. TJ = 175 C
3. Single Pulse
0.01
1
FGB40N60SM Rev. A
10
100
Collector-Emitter Voltage, VCE [V]
TC = 175 C
1
0
1000
5
10
20
30
40
Gate Resistance, RG [Ω]
50
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FGB40N60SM 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 6Ω
o
TC = 25 C
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
10
o
Switching Time [ns]
Switching Time [ns]
td(off)
TC = 175 C
100
tr
10
td(on)
o
TC = 25 C
o
TC = 175 C
1
0
10
20
30
40
1
20
50
30
40
50
60
70
80
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
5
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 6Ω
o
Eon
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
20
30
40
50
60
TC = 175 C
70
0.1
80
0
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Turn off Switching
SOA Characteristics
200
6
Collector Current, IC [A]
Switching Loss [mJ]
100
Eon
1
Eoff
Common Emitter
VGE = 15V, RG = 6Ω
o
TC = 25 C
10
Safe Operating Area
o
o
TC = 175 C
0.1
20
30
40
50
60
70
VGE = 15V, TC = 175 C
1
80
1
Collector Current, IC [A]
FGB40N60SM Rev. A
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
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FGB40N60SM 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequency
90
o
TJ < 175 C, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6Ω
100
70
60
50
40
30
20
90
80
70
o
Tc = 75 C
60
o
Tc = 100 C
50
40
30
20
10
0
25
Square Wave
110
Collector Current, IC [A]
Collector Current, IC [A]
120
Common Emitter
VGE = 15V
80
10
0
1k
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
10k
100k
Switching Frequency, f [Hz]
1M
Figure 21.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
Rectangular Pulse Duration [sec]
FGB40N60SM Rev. A
7
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FGB40N60SM 600V, 40A Field Stop IGBT
Typical Performance Characteristics
FGB40N60SM 600V, 40A Field Stop IGBT
Mechanical Dimensions
TO-263AB/D2-PAK
FGB40N60SM Rev. A
8
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FGB40N60SM Rev. A
9
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FGB40N60SM 600V, 40A Field Stop IGBT
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