STMicroelectronics M25P40-VMN3P 4 mbit, low voltage, serial flash memory with 40mhz spi bus interface Datasheet

M25P40
4 Mbit, Low Voltage, Serial Flash Memory
With 40MHz SPI Bus Interface
FEATURES SUMMARY
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■
■
■
■
■
■
■
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4 Mbit of Flash Memory
Page Program (up to 256 Bytes) in 1.5ms
(typical)
Sector Erase (512 Kbit) in 1s (typical)
Bulk Erase (4 Mbit) in 4.5s (typical)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
40MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature (12h)
Figure 1. Packages
8
1
SO8 (MN)
150 mil width
VDFPN8 (MP)
(MLP8)
August 2004
1/40
M25P40
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. SO and VDFPN Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
SIGNAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SPI MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Bus Master and Memory Devices on the SPI Bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. SPI Modes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
OPERATING FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Page Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Sector Erase and Bulk Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Polling During a Write, Program or Erase Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Active Power, Stand-by Power and Deep Power-Down Modes. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
BP2, BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SRWD bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2. Protected Area Sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Hold Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Hold Condition Activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
MEMORY ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 3. Memory Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Instruction Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/40
M25P40
Figure 8. Write Enable (WREN) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. Write Disable (WRDI) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5. Status Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
BP2, BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SRWD bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10.Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence . . . . . . . 15
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11.Write Status Register (WRSR) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. Protection Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Data Bytes (READ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 12.Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . 18
Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 13.Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence 19
Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 14.Page Program (PP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 15.Sector Erase (SE) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Bulk Erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 16.Bulk Erase (BE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 17.Deep Power-down (DP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Release from Deep Power-down and Read Electronic Signature (RES) . . . . . . . . . . . . . . . . . 24
Figure 18.Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and Data-Out Sequence24
Figure 19.Release from Deep Power-down (RES) Instruction Sequence . . . . . . . . . . . . . . . . . . . . 25
POWER-UP AND POWER-DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 20.Power-up Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 7. Power-Up Timing and VWI Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
INITIAL DELIVERY STATE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Operating Conditions . . . . . . . . . . . . . . . . . . . . . . .
Table 10. Data Retention and Endurance . . . . . . . . . . . . . . .
Table 11. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Table 12. DC Characteristics (Device Grade 6) . . . . . . . . . .
Table 13. DC Characteristics (Device Grade 3) . . . . . . . . . .
......
......
......
......
......
.......
.......
.......
.......
.......
......
......
......
......
......
......
......
......
......
......
. . . . 29
. . . . 29
. . . . 29
. . . . 30
. . . . 30
3/40
M25P40
Table 14. Instruction Times (Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 15. Instruction Times (Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 16. AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 21.AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 17. AC Characteristics (25MHz Operation, Device Grade 6 or 3) . . . . . . . . . . . . . . . . . . . . . 32
Table 18. AC Characteristics (40MHz Operation, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 22.Serial Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 23.Write Protect Setup and Hold Timing during WRSR when SRWD=1 . . . . . . . . . . . . . . . 34
Figure 24.Hold Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 25.Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 26.SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline . . . . 36
Table 19. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Mechanical Data
36
Figure 27.MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Outline . . . . . . . 37
Table 20. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Mechanical Data37
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 21. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 22. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
4/40
M25P40
SUMMARY DESCRIPTION
The M25P40 is a 4 Mbit (512K x 8) Serial Flash
Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible
bus.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide.
Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288 bytes.
The whole memory can be erased using the Bulk
Erase instruction, or a sector at a time, using the
Sector Erase instruction.
Figure 3. SO and VDFPN Connections
M25P40
S
Q
W
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
C
D
AI04091B
Figure 2. Logic Diagram
VCC
D
Q
Note: 1. There is an exposed die paddle on the underside of the
MLP8 package. This is pulled, internally, to V SS, and
must not be allowed to be connected to any other voltage
or signal line on the PCB.
2. See PACKAGE MECHANICAL section for package dimensions, and how to identify pin-1.
C
S
M25P40
W
HOLD
VSS
AI04090
Table 1. Signal Names
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
5/40
M25P40
SIGNAL DESCRIPTION
Serial Data Output (Q). This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D). This input signal is used to
transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of
Serial Clock (C).
Serial Clock (C). This input signal provides the
timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S). When this input signal is High,
the device is deselected and Serial Data Output
(Q) is at high impedance. Unless an internal Program, Erase or Write Status Register cycle is in
progress, the device will be in the Standby mode
6/40
(this is not the Deep Power-down mode). Driving
Chip Select (S) Low enables the device, placing it
in the active power mode.
After Power-up, a falling edge on Chip Select (S)
is required prior to the start of any instruction.
Hold (HOLD). The Hold (HOLD) signal is used to
pause any serial communications with the device
without deselecting the device.
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.
Write Protect (W). The main purpose of this input signal is to freeze the size of the area of memory that is protected against program or erase
instructions (as specified by the values in the BP2,
BP1 and BP0 bits of the Status Register).
M25P40
SPI MODES
These devices can be driven by a microcontroller
with its SPI peripheral running in either of the two
following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on
the rising edge of Serial Clock (C), and output data
is available from the falling edge of Serial Clock
(C).
The difference between the two modes, as shown
in Figure 5., is the clock polarity when the bus
master is in Stand-by mode and not transferring
data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
Figure 4. Bus Master and Memory Devices on the SPI Bus
SDO
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
C Q D
C Q D
C Q D
SPI Memory
Device
SPI Memory
Device
SPI Memory
Device
Bus Master
(ST6, ST7, ST9,
ST10, Others)
CS3
CS2
CS1
S
W
HOLD
S
W
HOLD
S
W
HOLD
AI03746D
Note: The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.
Figure 5. SPI Modes Supported
CPOL
CPHA
0
0
C
1
1
C
D
Q
MSB
MSB
AI01438B
7/40
M25P40
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,
and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the
internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP)
instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the
same page of memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to
be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all
1s (FFh). This can be achieved either a sector at a
time, using the Sector Erase (SE) instruction, or
throughout the entire memory, using the Bulk
Erase (BE) instruction. This starts an internal
Erase cycle (of duration tSE or tBE).
The Erase instruction must be preceded by a Write
Enable (WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status
Register (WRSR), Program (PP) or Erase (SE or
BE) can be achieved by not waiting for the worst
case delay (tW, tPP, tSE, or tBE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous
Write cycle, Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is enabled, and in the Active Power mode.
When Chip Select (S) is High, the device is disabled, but could remain in the Active Power mode
until all internal cycles have completed (Program,
8/40
Erase, Write Status Register). The device then
goes in to the Stand-by Power mode. The device
consumption drops to I CC1.
The Deep Power-down mode is entered when the
specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device
consumption drops further to ICC2. The device remains in this mode until another specific instruction (the Release from Deep Power-down Mode
and Read Electronic Signature (RES) instruction)
is executed.
All other instructions are ignored while the device
is in the Deep Power-down mode. This can be
used as an extra software protection mechanism,
when the device is not in active use, to protect the
device from inadvertent Write, Program or Erase
instructions.
Status Register
The Status Register contains a number of status
and control bits that can be read or set (as appropriate) by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2,
BP1, BP0) bits are non-volatile. They define the
size of the area to be software protected against
Program and Erase instructions.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits
of the Status Register (SRWD, BP2, BP1, BP0)
become read-only bits.
M25P40
Protection Modes
The environments where non-volatile memory devices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P40 boasts the
following data protection mechanisms:
■
Power-On Reset and an internal timer (tPUW)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
■
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
■
All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit . This bit is returned to its reset state
by the following events:
– Power-up
– Write Disable (WRDI) instruction
completion
–
■
■
■
Write Status Register (WRSR) instruction
completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
The Block Protect (BP2, BP1, BP0) bits allow
part of the memory to be configured as readonly. This is the Software Protected Mode
(SPM).
The Write Protect (W) signal allows the Block
Protect (BP2, BP1, BP0) bits and Status
Register Write Disable (SRWD) bit to be
protected. This is the Hardware Protected
Mode (HPM).
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Powerdown instruction).
Table 2. Protected Area Sizes
Status Register
Content
Memory Content
BP2
Bit
BP1
Bit
BP0
Bit
0
0
0
none
All sectors1 (eight sectors: 0 to 7)
0
0
1
Upper eighth (Sector 7)
Lower seven-eighths (seven sectors: 0 to 6)
0
1
0
Upper quarter (two sectors: 6 and 7)
Lower three-quarters (six sectors: 0 to 5)
0
1
1
Upper half (four sectors: 4 to 7)
Lower half (four sectors: 0 to 3)
1
0
0
All sectors (eight sectors: 0 to 7)
none
1
0
1
All sectors (eight sectors: 0 to 7)
none
1
1
0
All sectors (eight sectors: 0 to 7)
none
1
1
1
All sectors (eight sectors: 0 to 7)
none
Protected Area
Unprotected Area
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0.
9/40
M25P40
Hold Condition
The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this
signal Low does not terminate any Write Status
Register, Program or Erase cycle that is currently
in progress.
To enter the Hold condition, the device must be
selected, with Chip Select (S) Low.
The Hold condition starts on the falling edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low (as shown in Figure 6.).
The Hold condition ends on the rising edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low.
If the falling edge does not coincide with Serial
Clock (C) being Low, the Hold condition starts after Serial Clock (C) next goes Low. Similarly, if the
rising edge does not coincide with Serial Clock (C)
being Low, the Hold condition ends after Serial
Clock (C) next goes Low. (This is shown in Figure
6.).
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
Normally, the device is kept selected, with Chip
Select (S) driven Low, for the whole duration of the
Hold condition. This is to ensure that the state of
the internal logic remains unchanged from the moment of entering the Hold condition.
If Chip Select (S) goes High while the device is in
the Hold condition, this has the effect of resetting
the internal logic of the device. To restart communication with the device, it is necessary to drive
Hold (HOLD) High, and then to drive Chip Select
(S) Low. This prevents the device from going back
to the Hold condition.
Figure 6. Hold Condition Activation
C
HOLD
Hold
Condition
(standard use)
Hold
Condition
(non-standard use)
AI02029D
10/40
M25P40
MEMORY ORGANIZATION
The memory is organized as:
■
524,288 bytes (8 bits each)
■
8 sectors (512 Kbits, 65536 bytes each)
■
2048 pages (256 bytes each).
Each page can be individually programmed (bits
are programmed from 1 to 0). The device is Sector
or Bulk Erasable (bits are erased from 0 to 1) but
not Page Erasable.
Table 3. Memory Organization
Sector
Address Range
7
70000h
7FFFFh
6
60000h
6FFFFh
5
50000h
5FFFFh
4
40000h
4FFFFh
3
30000h
3FFFFh
2
20000h
2FFFFh
1
10000h
1FFFFh
0
00000h
0FFFFh
11/40
M25P40
Figure 7. Block Diagram
HOLD
W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
7FFFFh
Y Decoder
Size of the
read-only
memory area
00000h
000FFh
256 Bytes (Page Size)
X Decoder
AI04986
12/40
M25P40
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4..
Every instruction sequence starts with a one-byte
instruction code. Depending on the instruction,
this might be followed by address bytes, or by data
bytes, or by both or none. Chip Select (S) must be
driven High after the last bit of the instruction sequence has been shifted in.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read), Read
Status Register (RDSR) or Release from Deep
Power-down, and Read Electronic Signature
(RES) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip
Select (S) can be driven High after any bit of the
data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase
(SE), Bulk Erase (BE), Write Status Register
(WRSR), Write Enable (WREN), Write Disable
(WRDI) or Deep Power-down (DP) instruction,
Chip Select (S) must be driven High exactly at a
byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses
after Chip Select (S) being driven Low is an exact
multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or
Erase cycle are ignored, and the internal Write
Status Register cycle, Program cycle or Erase cycle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDSR
Read Status Register
0000 0101
05h
0
0
1 to ∞
WRSR
Write Status Register
0000 0001
01h
0
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to ∞
0000 1011
0Bh
3
1
1 to ∞
FAST_READ Read Data Bytes at Higher Speed
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
Release from Deep Power-down,
and Read Electronic Signature
0
3
1010 1011
ABh
1 to ∞
0
0
0
RES
Release from Deep Power-down
13/40
M25P40
(SE), Bulk Erase (BE) and Write Status Register
(WRSR) instruction.
The Write Enable (WREN) instruction is entered
by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S)
High.
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 8.)
sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase
Figure 8. Write Enable (WREN) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281E
–
–
–
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9.)
resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by
driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under
the following conditions:
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction
completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
–
–
–
Figure 9. Write Disable (WRDI) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750D
14/40
M25P40
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a
Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress,
it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the
device. It is also possible to read the Status Register continuously, as shown in Figure 10..
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is
set, when set to 0 the internal Write Enable Latch
is reset and no Write Status Register, Program or
Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2,
BP1, BP0) bits are non-volatile. They define the
size of the area to be software protected against
Program and Erase instructions. These bits are
written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect
(BP2, BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 2.) becomes protected against Page Program (PP) and Sector Erase
(SE) instructions. The Block Protect (BP2, BP1,
BP0) bits can be written provided that the Hardware Protected mode has not been set. The Bulk
Erase (BE) instruction is executed if, and only if,
both Block Protect (BP2, BP1, BP0) bits are 0.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode (when the Status Register Write
Disable (SRWD) bit is set to 1, and Write Protect
(W) is driven Low). In this mode, the non-volatile
bits of the Status Register (SRWD, BP2, BP1,
BP0) become read-only bits and the Write Status
Register (WRSR) instruction is no longer accepted
for execution.
Table 5. Status Register Format
b7
SRWD
b0
0
0
BP2
BP1
BP0
WEL
WIP
Status Register
Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
The status and control bits of the Status Register
are as follows:
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1,
such a cycle is in progress, when reset to 0 no
such cycle is in progress.
Figure 10. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031E
15/40
M25P40
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded and executed, the device sets
the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is
entered by driving Chip Select (S) Low, followed
by the instruction code and the data byte on Serial
Data Input (D).
The instruction sequence is shown in Figure 11..
The Write Status Register (WRSR) instruction has
no effect on b6, b5, b1 and b0 of the Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the
eighth bit of the data byte has been latched in. If
not, the Write Status Register (WRSR) instruction
is not executed. As soon as Chip Select (S) is driven High, the self-timed Write Status Register cycle
(whose duration is tW) is initiated. While the Write
Status Register cycle is in progress, the Status
Register may still be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable
Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block
Protect (BP2, BP1, BP0) bits, to define the size of
the area that is to be treated as read-only, as defined in Table 2.. The Write Status Register
(WRSR) instruction also allows the user to set or
reset the Status Register Write Disable (SRWD)
bit in accordance with the Write Protect (W) signal.
The Status Register Write Disable (SRWD) bit and
Write Protect (W) signal allow the device to be put
in the Hardware Protected Mode (HPM). The Write
Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is
entered.
Figure 11. Write Status Register (WRSR) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282D
16/40
M25P40
Table 6. Protection Modes
W
Signal
SRWD
Bit
1
0
0
0
1
1
0
1
Memory Content
Mode
Write Protection of the
Status Register
Software
Protected
(SPM)
Status Register is Writable
(if the WREN instruction
has set the WEL bit)
The values in the SRWD,
BP2, BP1 and BP0 bits
can be changed
Protected against Page
Program, Sector Erase
and Bulk Erase
Ready to accept Page
Program and Sector Erase
instructions
Hardware
Protected
(HPM)
Status Register is
Hardware write protected
The values in the SRWD,
BP2, BP1 and BP0 bits
cannot be changed
Protected against Page
Program, Sector Erase
and Bulk Erase
Ready to accept Page
Program and Sector Erase
instructions
Protected Area1
Unprotected Area1
Note: 1. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in Table 2..
The protection features of the device are summarized in Table 6..
When the Status Register Write Disable (SRWD)
bit of the Status Register is 0 (its initial delivery
state), it is possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit has
previously been set by a Write Enable (WREN) instruction, regardless of the whether Write Protect
(W) is driven High or Low.
When the Status Register Write Disable (SRWD)
bit of the Status Register is set to 1, two cases
need to be considered, depending on the state of
Write Protect (W):
– If Write Protect (W) is driven High, it is
possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit
has previously been set by a Write Enable
(WREN) instruction.
– If Write Protect (W) is driven Low, it is not
possible to write to the Status Register even if
the Write Enable Latch (WEL) bit has
previously been set by a Write Enable
(WREN) instruction. (Attempts to write to the
Status Register are rejected, and are not
accepted for execution). As a consequence,
all the data bytes in the memory area that are
software protected (SPM) by the Block Protect
(BP2, BP1, BP0) bits of the Status Register,
are also hardware protected against data
modification.
Regardless of the order of the two events, the
Hardware Protected Mode (HPM) can be entered:
– by setting the Status Register Write Disable
(SRWD) bit after driving Write Protect (W) Low
– or by driving Write Protect (W) Low after
setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware Protected Mode
(HPM) once entered is to pull Write Protect (W)
High.
If Write Protect (W) is permanently tied High, the
Hardware Protected Mode (HPM) can never be
activated, and only the Software Protected Mode
(SPM), using the Block Protect (BP2, BP1, BP0)
bits of the Status Register, can be used.
17/40
M25P40
Read Data Bytes (READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte
address (A23-A0), each bit being latched-in during
the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at
a maximum frequency fR, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 12..
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) instruction.
When the highest address is reached, the address
counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
Figure 12. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Data Out 1
High Impedance
Q
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI03748D
Note: 1. Address bits A23 to A19 are Don’t Care.
18/40
M25P40
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency fC, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 13..
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out
Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
C
Instruction
24 BIT ADDRESS
23 22 21
D
3
2
1
0
High Impedance
Q
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
D
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
Q
7
MSB
6
5
4
3
2
1
0
7
MSB
6
5
4
3
2
1
0
7
MSB
AI04006
Note: 1. Address bits A23 to A19 are Don’t Care.
19/40
M25P40
Page Program (PP)
The Page Program (PP) instruction allows bytes to
be programmed in the memory (changing bits from
1 to 0). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, three address bytes and at least
one data byte on Serial Data Input (D). If the 8
least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end
of the current page are programmed from the start
address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero).
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 14..
If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256
data bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data
bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same
page.
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the selftimed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Page Program (PP) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3. and Table 2.) is not executed.
Figure 14. Page Program (PP) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
28 29 30 31 32 33 34 35 36 37 38 39
9 10
C
Instruction
24-Bit Address
23 22 21
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
MSB
MSB
2078
2079
2077
2076
2075
2074
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
S
1
0
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte 3
1
MSB
0
7
MSB
6
5
4
3
2
Data Byte 256
1
0
7
6
5
4
3
2
MSB
AI04082B
Note: 1. Address bits A23 to A19 are Don’t Care.
20/40
M25P40
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15..
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3. and Table 2.) is not executed.
Figure 15. Sector Erase (SE) Instruction Sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
D
24 Bit Address
23 22
2
1
0
MSB
AI03751D
Note: 1. Address bits A23 to A19 are Don’t Care.
21/40
M25P40
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 16..
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
tBE) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Bulk Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
The Bulk Erase (BE) instruction is executed only if
all Block Protect (BP2, BP1, BP0) bits are 0. The
Bulk Erase (BE) instruction is ignored if one, or
more, sectors are protected.
Figure 16. Bulk Erase (BE) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
AI03752D
22/40
M25P40
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this
mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
to reduce the standby current (from I CC1 to I CC2,
as specified in Table 12.).
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction. This releases
the device from this mode. The Release from
Deep Power-down and Read Electronic Signature
(RES) instruction also allows the Electronic Signa-
ture of the device to be output on Serial Data Output (Q).
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 17..
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of tDP before the
supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that
is in progress.
Figure 17. Deep Power-down (DP) Instruction Sequence
S
0
1
2
3
4
5
6
7
tDP
C
Instruction
D
Stand-by Mode
Deep Power-down Mode
AI03753D
23/40
M25P40
Release from Deep Power-down and Read
Electronic Signature (RES)
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction. Executing this
instruction takes the device out of the Deep Power-down mode.
The instruction can also be used to read, on Serial
Data Output (Q), the 8-bit Electronic Signature,
whose value for the M25P40 is 12h.
Except while an Erase, Program or Write Status
Register cycle is in progress, the Release from
Deep Power-down and Read Electronic Signature
(RES) instruction always provides access to the 8bit Electronic Signature of the device, and can be
applied even if the Deep Power-down mode has
not been entered.
Any Release from Deep Power-down and Read
Electronic Signature (RES) instruction while an
Erase, Program or Write Status Register cycle is in
progress, is not decoded, and has no effect on the
cycle that is in progress.
The device is first selected by driving Chip Select
(S) Low. The instruction code is followed by 3
dummy bytes, each bit being latched-in on Serial
Data Input (D) during the rising edge of Serial
Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data
Output (Q), each bit being shifted out during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 18..
The Release from Deep Power-down and Read
Electronic Signature (RES) instruction is terminated by driving Chip Select (S) High after the Electronic Signature has been read at least once.
Sending additional clock cycles on Serial Clock
(C), while Chip Select (S) is driven Low, cause the
Electronic Signature to be output repeatedly.
When Chip Select (S) is driven High, the device is
put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the
transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by tRES2, and Chip Select (S) must remain High for at least tRES2(max),
as specified in Table 17.. Once in the Stand-by
Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
Sequence and Data-Out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
C
Instruction
23 22 21
D
tRES2
3 Dummy Bytes
3
2
1
0
MSB
Electronic Signature Out
High Impedance
Q
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
Stand-by Mode
AI04047C
Note: The value of the 8-bit Electronic Signature, for the M25P40, is 12h.
24/40
M25P40
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
S
0
1
2
3
4
5
6
7
tRES1
C
Instruction
D
High Impedance
Q
Deep Power-down Mode
Stand-by Mode
AI04078B
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in Figure 19.), still insures that the device is put into
Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If
the device was previously in the Deep Powerdown mode, though, the transition to the Stand-by
Power mode is delayed by t RES1, and Chip Select
(S) must remain High for at least tRES1(max), as
specified in Table 17.. Once in the Stand-by Power
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
25/40
M25P40
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must
not be selected (that is Chip Select (S) must follow
the voltage applied on VCC) until V CC reaches the
correct value:
– VCC(min) at Power-up, and then for a further
delay of tVSL
– VSS at Power-down
Usually a simple pull-up resistor on Chip Select (S)
can be used to insure safe and proper Power-up
and Power-down.
To avoid data corruption and inadvertent write operations during power up, a Power On Reset
(POR) circuit is included. The logic inside the device is held reset while VCC is less than the POR
threshold value, V WI – all operations are disabled,
and the device does not respond to any instruction.
Moreover, the device ignores all Write Enable
(WREN), Page Program (PP), Sector Erase (SE),
Bulk Erase (BE) and Write Status Register
(WRSR) instructions until a time delay of tPUW has
elapsed after the moment that V CC rises above the
VWI threshold. However, the correct operation of
the device is not guaranteed if, by this time, VCC is
still below VCC(min). No Write Status Register,
26/40
Program or Erase instructions should be sent until
the later of:
– tPUW after V CC passed the VWI threshold
– tVSL afterVCC passed the VCC(min) level
These values are specified in Table 7..
If the delay, tVSL, has elapsed, after VCC has risen
above VCC(min), the device can be selected for
READ instructions even if the tPUW delay is not yet
fully elapsed.
At Power-up, the device is in the following state:
– The device is in the Standby mode (not the
Deep Power-down mode).
– The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail
decoupling, to stabilize the VCC feed. Each device
in a system should have the VCC rail decoupled by
a suitable capacitor close to the package pins.
(Generally, this capacitor is of the order of 0.1µF).
At Power-down, when VCC drops from the operating voltage, to below the POR threshold value,
VWI, all operations are disabled and the device
does not respond to any instruction. (The designer
needs to be aware that if a Power-down occurs
while a Write, Program or Erase cycle is in
progress, some data corruption can result.)
M25P40
Figure 20. Power-up Timing
VCC
VCC(max)
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
VCC(min)
tVSL
Reset State
of the
Device
Read Access allowed
Device fully
accessible
VWI
tPUW
time
AI04009C
Table 7. Power-Up Timing and VWI Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL 1
VCC(min) to S low
10
tPUW1
Time delay to Write instruction
1
10
ms
VWI1
Write Inhibit Voltage
1
2
V
µs
Note: 1. These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each byte contains
FFh). The Status Register contains 00h (all Status
Register bits are 0).
27/40
M25P40
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 8. Absolute Maximum Ratings
Symbol
Parameter
TSTG
Storage Temperature
TLEAD
Lead Temperature during Soldering
Max.
Unit
–65
150
°C
See note 1
°C
VIO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
VCC
Supply Voltage
–0.6
4.0
V
VESD
Electrostatic Discharge Voltage (Human Body model) 2
–2000
2000
V
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)
28/40
Min.
ECOPACK ®
7191395 specification, and
M25P40
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parameters.
Table 9. Operating Conditions
Symbol
VCC
Parameter
Min.
Max.
Unit
Supply Voltage
2.7
3.6
V
Ambient Operating Temperature (Device Grade 6)
–40
85
Ambient Operating Temperature (Device Grade 3)
–40
125
Min.
Max.
°C
TA
Table 10. Data Retention and Endurance
Parameter
Condition
Device Grade 6
Erase/Program Cycles
100 000
Device Grade 3 1
Data Retention
10 000
Device Grade 6
20
Device Grade 3 1 (at 85°C)
20
Unit
cycles per
sector
years
Note: 1. This is preliminary data
Table 11. Capacitance
Symbol
COUT
CIN
Parameter
Output Capacitance (Q)
Input Capacitance (other pins)
Test Condition
Min.
Max.
Unit
VOUT = 0V
8
pF
VIN = 0V
6
pF
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 20MHz.
29/40
M25P40
Table 12. DC Characteristics (Device Grade 6)
Symbol
Parameter
Test Condition
(in addition to those in Table 9.)
Min.
Max.
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
S = VCC, VIN = VSS or VCC
50
µA
ICC2
Deep Power-down Current
S = VCC, VIN = VSS or VCC
10
µA
C = 0.1VCC / 0.9.VCC at 40MHz,
Q = open
8
mA
C = 0.1VCC / 0.9.VCC at 20MHz,
Q = open
4
mA
ICC3
Operating Current (READ)
ICC4
Operating Current (PP)
S = VCC
15
mA
ICC5
Operating Current (WRSR)
S = VCC
15
mA
ICC6
Operating Current (SE)
S = VCC
15
mA
ICC7
Operating Current (BE)
S = VCC
15
mA
VIL
Input Low Voltage
–0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6mA
0.4
V
VOH
Output High Voltage
IOH = –100µA
VCC–0.2
Test Condition
(in addition to those in Table 9.)
Min.1
V
Table 13. DC Characteristics (Device Grade 3)
Symbol
Parameter
Max.1
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
S = VCC, VIN = VSS or VCC
100
µA
ICC2
Deep Power-down Current
S = VCC, VIN = VSS or VCC
50
µA
C = 0.1VCC / 0.9.VCC at 40MHz,
Q = open
8
mA
C = 0.1VCC / 0.9.VCC at 20MHz,
Q = open
4
mA
ICC3
Operating Current (READ)
ICC4
Operating Current (PP)
S = VCC
15
mA
ICC5
Operating Current (WRSR)
S = VCC
15
mA
ICC6
Operating Current (SE)
S = VCC
15
mA
ICC7
Operating Current (BE)
S = VCC
15
mA
VIL
Input Low Voltage
– 0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6mA
0.4
V
VOH
Output High Voltage
IOH = –100µA
Note: 1. This is preliminary data
30/40
VCC–0.2
V
M25P40
Table 14. Instruction Times (Device Grade 6)
Test conditions specified in Table 9. and Table 16.
Symbol
Alt.
Parameter
tW
Write Status Register Cycle Time
tPP
Page Program Cycle Time
tSE
Sector Erase Cycle Time
tBE
Bulk Erase Cycle Time
Min.
Typ.
Max.
Unit
5
15
ms
1.4
5
ms
1
3
s
4.5
10
s
Typ.1,2
Max.2
Unit
8
15
ms
1.5
5
ms
1
3
s
4.5
10
s
Table 15. Instruction Times (Device Grade 3)
Test conditions specified in Table 9. and Table 16.
Symbol
Alt.
Parameter
tW
Write Status Register Cycle Time
tPP
Page Program Cycle Time
tSE
Sector Erase Cycle Time
tBE
Bulk Erase Cycle Time
Min.
Note: 1. At 85°C
2. This is preliminary data
Table 16. AC Measurement Conditions
Symbol
CL
Parameter
Min.
Max.
Load Capacitance
30
Input Rise and Fall Times
Unit
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VCC / 2
V
Output Timing Reference Voltages
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
Input Levels
0.8VCC
0.2VCC
Input and Output
Timing Reference Levels
0.7VCC
0.5VCC
0.3VCC
AI07455
31/40
M25P40
Table 17. AC Characteristics (25MHz Operation, Device Grade 6 or 3)
Test conditions specified in Table 9. and Table 16.
Symbol
Alt.
fC
fC
fR
Parameter
Min.5
Typ.
Max.5
Unit
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES,
WREN, WRDI, RDSR, WRSR
D.C.
25
MHz
Clock Frequency for READ instructions
D.C.
20
MHz
tCH 1
tCLH
Clock High Time
18
ns
tCL 1
tCLL
Clock Low Time
18
ns
tCLCH 2
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL 2
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
10
ns
S Not Active Hold Time (relative to C)
10
ns
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
10
ns
tSHCH
S Not Active Setup Time (relative to C)
10
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ 2
tDIS
Output Disable Time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
10
ns
tCHHH
HOLD Hold Time (relative to C)
10
ns
tHHCH
HOLD Setup Time (relative to C)
10
ns
tCHHL
HOLD Hold Time (relative to C)
10
ns
tHHQX 2
tLZ
HOLD to Output Low-Z
15
ns
tHLQZ 2
tHZ
HOLD to Output High-Z
20
ns
tWHSL 4
Write Protect Setup Time
20
ns
tSHWL 4
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
µs
tRES1 2
S High to Standby Mode without Electronic
Signature Read
3
µs
tRES2 2
S High to Standby Mode with Electronic
Signature Read
1.8
µs
tDP 2
Note: 1.
2.
3.
4.
5.
32/40
tCH + tCL must be greater than or equal to 1/ fC
Value guaranteed by characterization, not 100% tested in production.
Expressed as a slew-rate.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
For device grade 3, this is Preliminary Data
M25P40
Table 18. AC Characteristics (40MHz Operation, Device Grade 6)
40MHz available for products marked since week 20 of 2004, only 5
Test conditions specified in Table 9. and Table 16.
Symbol
Alt.
fC
fC
fR
Parameter
Min.
Typ.
Max.
Unit
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES,
WREN, WRDI, RDSR, WRSR
D.C.
40
MHz
Clock Frequency for READ instructions
D.C.
20
MHz
tCH 1
tCLH
Clock High Time
11
ns
tCL 1
tCLL
Clock Low Time
11
ns
tCLCH 2
Clock Rise Time3 (peak to peak)
0.1
V/ns
tCHCL 2
Clock Fall Time3 (peak to peak)
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
tSLCH
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ 2
tDIS
Output Disable Time
9
ns
tCLQV
tV
Clock Low to Output Valid
9
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX 2
tLZ
HOLD to Output Low-Z
9
ns
tHLQZ 2
tHZ
HOLD to Output High-Z
9
ns
tWHSL 4
Write Protect Setup Time
20
ns
tSHWL 4
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
µs
tRES1 2
S High to Standby Mode without Electronic
Signature Read
3
µs
tRES2 2
S High to Standby Mode with Electronic
Signature Read
1.8
µs
tDP 2
Note: 1.
2.
3.
4.
5.
tCH + tCL must be greater than or equal to 1/ fC
Value guaranteed by characterization, not 100% tested in production.
Expressed as a slew-rate.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Details of how to find the date of marking are given in Application Note, AN1995.
33/40
M25P40
Figure 22. Serial Input Timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
D
Q
MSB IN
tCLCH
LSB IN
High Impedance
AI01447C
Figure 23. Write Protect Setup and Hold Timing during WRSR when SRWD=1
W
tSHWL
tWHSL
S
C
D
High Impedance
Q
AI07439
34/40
M25P40
Figure 24. Hold Timing
S
tHLCH
tCHHL
tHHCH
C
tCHHH
tHLQZ
tHHQX
Q
D
HOLD
AI02032
Figure 25. Output Timing
S
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
tQLQH
tQHQL
D ADDR.LSB IN
AI01449D
35/40
M25P40
PACKAGE MECHANICAL
Figure 26. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline
h x 45˚
A
C
B
CP
e
D
N
E
H
1
A1
α
L
SO-a
Note: Drawing is not to scale.
Table 19. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Mechanical Data
mm
inches
Symb.
Typ.
Min.
Max.
A
1.35
A1
Min.
Max.
1.75
0.053
0.069
0.10
0.25
0.004
0.010
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
–
–
–
–
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.40
0.90
0.016
0.035
α
0°
8°
0°
8°
N
8
e
CP
36/40
1.27
Typ.
0.050
8
0.10
0.004
M25P40
Figure 27. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Outline
D
D1
E E1
E2
e
b
θ
A
D2
A2
L
A1 A3
VDFPN-01
Note: Drawing is not to scale.
Table 20. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Mechanical Data
mm
inches
Symb.
Typ.
A
Min.
0.85
A1
0.00
Max.
Typ.
1.00
0.0335
0.05
A2
0.65
0.0256
A3
0.20
0.0079
b
0.40
D
6.00
0.2362
D1
5.75
0.2264
D2
3.40
E
5.00
0.1969
E1
4.75
0.1870
E2
4.00
e
1.27
L
0.60
θ
0.35
3.20
3.80
0.48
3.60
4.20
0.0157
0.1339
0.1575
Min.
Max.
0.0394
0.0000
0.0020
0.0138
0.0189
0.1260
0.1417
0.1496
0.1654
0.0197
0.0295
0.0500
0.50
0.75
12°
0.0236
12°
37/40
M25P40
PART NUMBERING
Table 21. Ordering Information Scheme
Example:
M25P40
–
V MN
6
T
P
Device Type
M25P = Serial Flash Memory for Code Storage
Device Function
40 = 4 Mbit (512K x 8)
Operating Voltage
V = VCC = 2.7 to 3.6V
Package
MN = SO8 (150 mil width)
MP = VDFPN8 6x5mm (MLP8)
Device Grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3 4 = Device tested with High Reliability Certified Flow1.
Automotive temperature range (–40 to 125 °C)
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating Technology
blank = Standard SnPb plating
P2 = Lead-Free and RoHS compliant
G3 = Lead-Free, RoHS compliant, Sb2O3-free and TBBA-free
Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.
2. Available for SO8 package only
3. Available for MLP package only
4. Device grade 3 available in SO8 Lead-free and RoHS compliant package
For a list of available options (speed, package, etc.) or for further information on any aspect of this device,
please contact your nearest ST Sales Office.
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REVISION HISTORY
Table 22. Document Revision History
Date
Rev.
Description of Revision
12-Apr-2001
1.0
Document written
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection modes;
Release from Power-down and Read Electronic Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, VWI, ICC3 and clock slew
rate. Descriptions of Polling, Hold Condition, Page Programming, Release for Deep Powerdown made more precise. Value of tW(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Stand-by Power mode from Deep Power-down mode,
and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current changed. Write Protect setup
and hold times specified, for applications that switch Write Protect to exit the Hardware
Protection mode immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added.
40MHz AC Characteristics table included as well as 25MHz. I CC3(max), tSE(typ) and tBE(typ)
values improved. Change of naming for VDFPN8 package
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for RoHS compliant
devices
05-Aug-2004
4.0
Device Grade information clarified. Data-retention measurement temperature corrected.
Details of how to find the date of marking added.
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