CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity in use are desirable. The CDP1822 features high speed and a wide operating voltage range. Both types have separate data inputs and outputs and utilize single power supplies of 4V to 6.5V for the CDP1822C and 4V to 10.5V for the CDP1822. • Industry Standard Pinout • Two Chip-Select Inputs-Simple Memory Expansion • Memory Retention for Standby Battery Voltage of 2V Minimum • Output-Disable for Common I/O Systems • Three-State Data Output for Bus-Oriented Systems • Separate Data Inputs and Outputs Ordering Information 5V CDP1822CE 10V CDP1822E CDP1822CEX CDP1822EX CDP1822CD CDP1822CDX CDP1822D - PACKAGE TEMP. RANGE PDIP -40oC to +85oC E22.4 E22.4 Burn-In SBDIP PKG. NO. -40oC to +85oC D22.4A D22.4A Burn-In Two Chip-Select inputs are provided to simplify system expansion. An Output Disable control provides Wire-OR capability and is also useful in common Input/Output systems. The Output Disable input allows these RAMs to be used in common data Input/Output systems by forcing the output into a high-impedance state during a write operation independent of the Chip-Select input condition. The output assumes a high-impedance state when the Output Disable is at high level or when the chip is deselected by CS1 and/or CS2. The high noise immunity of the CMOS technology is preserved in this design. For TTL interfacing at 5V operation, excellent system noise margin is preserved by using an external pull-up resistor at each input. Pinout CDP1822, CDP1822C (PDIP, SBDIP) TOP VIEW A3 1 22 VDD A2 2 21 A4 A1 3 20 R/W A0 4 19 CS1 A5 5 18 O. D. A6 6 17 CS2 A7 7 16 DO4 VSS 8 15 DI4 DI1 9 14 DO3 DO1 10 13 DI3 DI2 11 12 DO2 OPERATIONAL MODES INPUTS CHIP SELECT 1 (CS1) CHIP SELECT 2 (CS2) Read 0 1 0 1 Read Write 0 1 0 0 Data In Write 0 1 1 0 High Impedance Standby 1 X X X High Impedance Standby X 0 X X High Impedance Output Disable X X 1 X High Impedance MODE OUTPUT READ/ DISABLE WRITE (OD) (R/W) OUTPUT NOTE: Logic 1 = High, Logic 0 = Low, X = Don’t Care. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 6-11 File Number 1074.2 CDP1822, CDP1822C Absolute Maximum Ratings Thermal Information DC Supply Voltage Range, (VDD) (All Voltages Referenced to VSS Terminal) CDP1822 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +11V CDP1822C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Thermal Resistance (Typical) θJA (oC/W) θJC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 75 N/A SBDIP Package . . . . . . . . . . . . . . . . . . 80 21 Maximum Operating Temperature Range (TA) Package Type D. . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to +125oC Package Type E . . . . . . . . . . . . . . . . . . . . . . . . . . .-40oC to +85oC Maximum Junction Temperature Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175oC Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC Storage Temperature Range (TSTG). . . . . . . . . . . .-65oC to +150oC TA = -40oC to +60oC (Package Type E) . . . . . . . . . . . . . . 500mW TA = +60oC to +85oC (Package Type E) . . . . . . Derate Linearly at . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12mW/oC to 200mW Lead Temperature (During Soldering). . . . . . . . . . . . . . . . . . . 300oC Recommended Operating Conditions At TA = Full Package Temperature Range. For maximum reliability, operating conditions should be selected so that operation is always within the following ranges: LIMITS CDP1822 PARAMETER SYMBOL MIN MAX MIN MAX UNITS 4 10.5 4 6.5 V VSS VDD VSS VDD V DC Operating Voltage Range Input Voltage Range CDP1822C At TA = -40oC to +85oC, Except as Noted Static Electrical Specifications CONDITIONS LIMITS CDP1822 CDP1822C SYMBOL VO (V) VIN (V) VDD (V) MIN (NOTE 1) TYP MAX MIN (NOTE 1) TYP MAX UNITS Quiescent Device Current IDD - 0, 5 5 - - 500 - - 500 µA - 0, 10 10 - - 1000 - - - µA Output Low (Sink) Current IOL 0.4 0, 5 5 2 4 - 2 4 - mA 0.5 0, 10 10 4.5 9 - - - - mA Output High (Source) Current IOH 4.6 0, 5 5 -1 -2 - -1 -2 - mA 9.5 0, 10 10 -2.2 -4.4 - - - - mA Output Voltage Low-Level VOL - 0, 5 5 - 0 0.1 - 0 0.1 V - 0, 10 10 - 0 0.1 - - - V Output Voltage High-Level VOH - 0, 5 5 4.9 5 - 4.9 5 - V - 0, 10 10 9.9 10 - - - - V Input Low Voltage VIL 0.5, 4.5 - 5 - - 1.5 - - 1.5 V 0.5, 9.5 - 10 - - 3 - - - V 0.5, 9.5 - 5 3.5 - - 3.5 - - V 0.5, 9.5 - 10 7 - - - - - V - 0, 5 5 - - ±5 - - ±5 µA - 0, 10 10 - - ±10 - - - µA PARAMETER Input High Voltage Input Leakage Current VIH IIN 6-12 CDP1822, CDP1822C At TA = -40oC to +85oC, Except as Noted (Continued) Static Electrical Specifications CONDITIONS LIMITS CDP1822 CDP1822C SYMBOL VO (V) VIN (V) VDD (V) MIN (NOTE 1) TYP MAX MIN (NOTE 1) TYP MAX UNITS Operating Current (Note 2) IDD1 - 0, 5 5 - 4 8 - 4 8 mA - 0, 10 10 - 8 16 - - - mA Three-State Output Leakage Current IOUT 0, 5 0, 5 5 - - ±5 - - ±5 µA 0, 10 0, 10 10 - - ±10 - - - µA Input Capacitance CIN - - - - 5 7.5 - 5 7.5 pF COUT - - - - 10 15 - 10 15 pF PARAMETER Output Capacitance NOTES: 1. Typical values are for TA = +25oC and nominal VDD. 2. Outputs open circuited; Cycle time = 1µs. Dynamic Electrical Specifications At TA + -40 to +85oC, VDD ±5%, Input t R, t F = 20ns, VIH = 0.7 VDD, VIL = 0.3 VDD , CL = 100 pF TEST CONDITIONS LIMITS CD1822 PARAMETER CDP1822C VDD (V) (NOTE 1) MIN (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX UNITS 5 450 - - 450 - - ns 10 250 - - - - - ns 5 - 250 450 - 250 450 ns 10 - 150 250 - - - ns 5 - 250 450 - 250 450 ns 10 - 150 250 - - - ns 5 - 250 450 - 250 450 ns 10 - 150 250 - - - ns 5 - - 200 - - 200 ns 10 - - 110 - - - ns 5 20 - - 20 - - ns 10 20 - - - - - ns 5 20 - - 20 - - ns 10 20 - - - - - ns 5 20 - - 20 - - ns 10 20 - - - - - ns Read Cycle Times (Figure 1) Read Cycle Access from Address Output Valid from Chip-Select 1 Output Valid from Chip-Select 2 tRC tAA tDOA1 tDOA2 Output Valid from Output Disable tDOA3 Output Hold from Chip-Select 1 Output Hold from Chip-Select 2 tDOH1 tDOH2 Output Hold from Output Disable tDOH3 NOTES: 1. Time required by a limit device to allow for indicated function. 2. Typical values are for TA = 25oC and nominal VDD. 6-13 CDP1822, CDP1822C tRC A0 - A7 tDOA1 CHIP-SELECT 1 CHIP-SELECT 2 tDOH1 tDOH2 tDOA2 tDOA3 OUTPUT DISABLE tDOH3 READ/WRITE tAA DATA OUT VALID DATA OUT HIGH IMPEDANCE HIGH IMPEDANCE FIGURE 1. READ CYCLE TIMING WAVEFORMS Dynamic Electrical Specifications At TA + -40 to +85oC, VDD ±5%, Input t R, t F = 20ns, VIH = 0.7 VDD, VIL = 0.3 VDD , CL = 100 pF. LIMITS TEST CONDITIONS PARAMETER CD1822 CDP1822C VDD (V) (NOTE 1) MIN (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX UNITS 5 500 - - 500 - - ns 10 300 - - - - - ns 5 200 - - 200 - - ns 10 110 - - - - - ns 5 50 - - 50 - - ns 10 40 - - - - - ns 5 250 - - 250 - - ns 10 150 - - - - - ns 5 250 - - 250 - - ns 10 150 - - - - - ns 5 50 - - 50 - - ns 10 40 - - - - - ns 5 200 - - 200 - - ns 10 110 - - - - - ns 5 200 - - 200 - - ns 10 110 - - - - - ns Read Cycle Times (Figure 2) Write Cycle Address Setup Write Recovery Write Width Input Data Setup Time Data Hold Chip-Select 1 Setup Chip-Select 2 Setup tWC tAS tWR tWRW tDS tDH tCS1S tCS2S 6-14 CDP1822, CDP1822C Dynamic Electrical Specifications At TA + -40 to +85oC, VDD ±5%, Input t R, t F = 20ns, VIH = 0.7 VDD, VIL = 0.3 VDD , CL = 100 pF. (Continued) LIMITS TEST CONDITIONS PARAMETER Chip-Select 1 Hold tCS1H Chip-Select 2 Hold tCS2H Output Disable Set-Up tODS CD1822 CDP1822C VDD (V) (NOTE 1) MIN (NOTE 2) TYP MAX (NOTE 1) MIN (NOTE 2) TYP MAX UNITS 5 0 - - 0 - - ns 10 0 - - 0 - - ns 5 0 - - 0 - - ns 10 0 - - 0 - - ns 5 200 - - 200 - - ns 10 110 - - - - - ns NOTES: 1. Time required by a limit device to allow for indicated function. 2. Typical values are for TA = 25oC and nominal VDD. tWC tWR A0-A7 tCSIS tCSIH CHIP-SELECT 1 CHIP-SELECT 2 tCS2S OUTPUT DISABLE tCS2H (NOTE) tODS tDS DI1-DI4 tDH DATA IN STABLE tWRW READ/WRITE tAS DON’T CARE NOTE: tODS is required for common I/O operation only. For separate I/O operations, output disable is don’t care. FIGURE 2. WRITE CYCLE TIME WAVEFORMS 6-15 CDP1822, CDP1822C At TA = -40 to +85oC, see Figure 3. Data Retention Specifications LIMITS TEST CONDITIONS PARAMETER Min. Data Retention Voltage VDR Data Retention Quiescent Current IDD Chip Deselect to Data Retention Time tCDR Recovery to Normal Operation Time tRC VDD to VDR Rise and Fall Time tR, tF CDP1822 CDP1822C VDR (V) VDD (V) MIN (NOTE 1) TYP MAX MIN (NOTE 1) TYP MAX UNITS - - - 1.5 2 - 1.5 2 V 2 - - 30 100 - 30 100 µA - 5 600 - - 600 - - ns - 10 300 - - - - - ns - 5 600 - - 600 - - ns - 10 300 - - - - - ns 2 5 1 - - 1 - - µA NOTE: Typical values are for TA = 25oC and nominal VDD. VDD DATA RETENTION MODE 0.95 VDD DATA IN 0.95 VDD VDR tCDR CS2 VIH VIL tf tr VSS tRC READ ADDRESS DECODER WRITE ADDRESS DECODER VIH DATA OUT VDD VIL VDD FIGURE 3. LOW VDD DATA RETENTION TIME WAVEFORMS FIGURE 4. MEMORY CELL CONFIGURATION 6-16 CDP1822, CDP1822C A0 A1 A2 A3 A4 DI1 DI2 DI3 DI4 A5 A6 A7 R/W CSI CS2 OD †4 †3 †2 †1 † 21 (5) INPUT BUFFERS AND ALL ROWS DESELECT FUNCTION (32) ROW 22 DECODERS (8 x 32) STORAGE ARRAY †9 † 11 † 13 † 15 †5 †6 †7 †17 (8 x 32) STORAGE ARRAY (8 x 32) STORAGE ARRAY (4) GATES (4) BITS (1-4) (3) INPUT BUFFERS AND ALL COLUMNS DESELECT FUNCTION †20 †19 (8 x 32) STORAGE ARRAY BIT (1) BIT (2) BIT (3) (8) (8) (8) (8) COLUMN DECODERS COLUMN DECODERS COLUMN DECODERS COLUMN DECODERS BUFFER DRIVERS 10 ††† VDD †† D01 12 †† D02 14 †† D03 16 †† D04 BIT (4) CONTROL B 8 CONTROL C CONTROL A †18 VDD VDD VSS † INPUT PROTECTION NETWORK VDD VSS † † OUTPUT VSS † † † OVER VOLTAGE PROTECTION CIRCUIT PROTECTION CIRCUIT FIGURE 5. FUNCTIONAL BLOCK DIAGRAM FOR CDP1822 AND CDP1822C 6-17 ††† VSS CDP1822, CDP1822CS C CONTROL A CS1 19 A CHIP-SELECT CONTROL CS2 17 CONTROL B B CHIP-SELECT AND R/W CONTROL R/W 20 CONTROL C C OUTPUT DISABLE CONTROL OUTPUT 18 DISABLE FIGURE 6. LOGIC DIAGRAM OF CONTROLS FOR CDP1822 AND CDP1822C All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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