Sirectifier MBR10150CT High tjm low irrm schottky barrier diode Datasheet

MBR10150CT thru MBR10200CT
High Tjm Low IRRM Schottky Barrier Diodes
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
MBR10150CT
MBR10200CT
VRRM
V
150
200
VRMS
V
105
140
Symbol
VDC
V
150
200
Characteristics
10
A
120
A
10000
V/us
IF=5A @TJ=25 Co
IF=5A @TJ=125 Co
IF=10A @TJ=25 oC
IF=10A @TJ=125 oC
0.95
0.95
0.80
V
@TJ=25oC
@TJ=125oC
0.05
15
mA
@TC=120oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
ROJC
TSTG
o
4.5
Typical Thermal Resistance (Note 2)
Operating Temperature Range
TJ
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Unit
Maximum Average Forward Rectified Current
Maximum Forward
Voltage (Note 1)
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
C/W
-55 to +150
o
-55 to +150
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
P1
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
C
C
MBR10150CT thru MBR10200CT
High Tjm Low IRRM Schottky Barrier Diodes
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
100
70
10,000
50
TJ=150
1,000
IR , REVERSE CURRENT (u A)
TJ=150
20
TJ=125
10
7
TJ=100
5
TJ=25
2
TJ=125
100
TJ=100
10
1
0.1
TJ=25
1
0.01
0.2
0.4
VF
0.6
0.8
1
0
SQUARE
WAVE
10
32
28
dc
IPK
=20
IAV
20
16
12
8
4
0
100
120
140
160
180
200
RATED VOLTAGE
Rth JC=2 /W
10
SQUARE
WAVE
5
5
10
15
20
25
30
35
90
100
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
110
120
130
140
150
160
TC , CASE TEMPERATURE
Figure 3. Forward Power Dissipation
Figure 4. Forward Current Derating, Case
500
10
RATED VOLTAGE
Rth JA=16 /W
TJ=25
400
8
C , CAPACITANCE (pF)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
80
0
0
6
4
300
200
100
2
0
0
0
25
50
75
100
125
TA , AMBIENT TEMPERATURE
Figure 5. Current Derating, Ambient
P2
60
Figure 2. Typical Reverse Current (Per Leg)
IF(AV) , AVERAGE POWER CURRENT (AMPS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
TJ=125
36
24
40
VR , REVERSE CURRENT (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg)
40
20
, INSTANTANEOUS VOLTAGE (VOLTS)
150
175
1
2
5
10
20
50
70
100
VR , REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance (Per Leg)
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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