UNISONIC TECHNOLOGIES CO., LTD MCR101 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thrusters, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. FEATURES *Sensitive Gate Allows Triggering by Micro Controllers and other Logic Circuits *Blocking Voltage to 600V *On-State Current Rating of 0.8A RMS at 80°C *High Surge Current Capability – 10A *Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design *Immunity to dV/dt – 20V/μsec Minimum at 110°C *Glass-Passivated Surface for Reliability and Uniformity ORDERING INFORMATION Ordering Number Normal Lead Free Plating Halogen Free MCR101-x-xx-T92-B MCR101L-x-xx-T92-B MCR101G-x-xx-T92-B MCR101-x-xx-T92-K MCR101L-x-xx-T92-K MCR101G-x-xx-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 G A K G A K Packing Tape Box Bulk Note: Pin Assignment: G: Gate A: Anode K: Cathode MCR101L-x-xx-T92-B (1)Packing Type (1) B: Tape Reel, K: Bulk (2)Package Type (2) T92: TO-92 (3)Rank (3) xx: refer to Classification of IGT (4)Peak Voltage (4) 4: 200V, 6: 400V, 8: 600V (5)Lead Plating (5) L: Lead Free Plating, Blank: Pb/Sn (5) G: Halogen Free www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-009,D MCR101 SCR ABSOLUTE MAXIMUM RATINGS PARAMETER Peak Repetitive Off-State Voltage(note) (TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open) SYMBOL RATINGS UNIT MCR101-4 200 V MCR101-6 VDRM,VRRM 400 MCR101-8 600 On-Sate RMS Current (Tc=80°C) 180° Condition Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current ITSM 10 A (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) Circuit Fusing Considerations (t=8.3 ms) I2t 0.415 A2s Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0μs) PGM 0.1 W Forward Average Gate Power (TA=25°C, t=8.3ms) PG(AV) 0.1 W Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0μs) IGM 1 A Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0μs) VGRM 5 V Operating Junction Temperature @ Rated VRRM and VDRM TJ -40 ~ +110 °C Storage Temperature TSTG -40 ~ +150 °C Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATING 200 75 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Peak Forward or Reverse Tc=25°C IDRM, IRRM VD=Rated VDRM and VRRM; RGK=1kΩ Blocking Current Tc=125°C ON CHARACTERISTICS Peak Forward On-State Voltage (Note1) VTM ITM=1A Peak @ TA=25°C Gate Trigger Current (Continuous IGT VAK=7Vdc, RL=100Ω, TC=25°C dc)(note2) Tc=25 °C Holding Current (note 3) IH VAK=7Vdc, initiating current=20mA Tc=-40 °C Tc=25°C Latch Current IL VAK=7V, Ig=200μA Tc=-40 °C Gate Trigger Current Tc=25 °C VGT VAK=7Vdc, RL=100Ω (continuous dc) (Note 2) Tc=-40 °C DYNAMIC CHARACTERISTICS VD=Rated VDRM, Exponential Critical Rate of Rise of Off-State Voltage dV/dt Waveform, RGK=1000Ω, TJ=110°C IPK=20A, Pw=10μsec Critical Rate of Rise of On-State Current di/dt diG/dt=1A/μsec, Igt=20mA Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1% 2. RGK=1000Ω included in measurement. 3. Does not include RGK in measurement. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 100 μA 1.7 V 40 200 μA 0.5 5 10 10 15 0.8 1.2 0.6 0.62 20 35 mA mA V V/μs 50 A/μs 2 of 5 QW-R301-009,C MCR101 SCR VOLTAGE CURRENT CHARACTERISTIC OF SCR SYMBOL VDRM IDRM VRRM IRRM VTM IH PARAMETER Peak Repetitive Off Stat Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current + Current Anode + VTM on state IH IRRM at VRRM + Voltage Reverse Blocking Region (off state) Reverse Avalanche Region Anode - IDRM at VDRM Forward Blocking Region (off state) CLASSIFICATION OF IGT RANK RANGE B 48~105μA C 95~200μA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw AA 8~16μA AB 14~21μA AC 19~25μA AD 23~52μA 3 of 5 QW-R301-009,C MCR101 TYPICAL CHARACTERISTICS Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 0.9 Gate Trigger Voltage (Volts) 1.0 90 Gate Trigger Current (μA) 100 80 70 60 50 40 30 20 10 -40 -25 -10 5 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 25 50 65 80 95 110 20 25 50 65 80 95 110 Junction Temperature, TJ (℃) Instantaneous On-State Current, IT (AMPS) Holding Current (μA) Latching Current (μA) Junction Temperature, TJ (℃) Maximum Allowable Case Temperature, TC (℃) SCR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R301-009,C MCR101 SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R301-009,C