Diodes SMD Type Band-switching diodes BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage VR Continuous forward current IF Storage temperature Conditions single diode loaded -65 Tstg Junction temperature Min Max Unit 35 V 100 mA +150 Tj 150 Thermal resistance from junction to tie-point Rth j-t p 300 K/W Thermal resistance from junction to ambient Rth j-a 600 K/W Electrical C haracteristics Ta = 25 P aram eter S ym bol C onditions M ax U nit Forw ard voltage VF I F = 100 m A 1.0 V R everse current IR V R = 20 V 50 nA D iode capacitance Cd f = 1 M H z; V R = 1 V Cd f = 1 M H z; V R = 3 V V R = 20 V ; T j = 75 D iode capacitance B A 682 B A 683 D iode forw ard resistance B A 682 D iode forw ard resistance B A 683 1.25 A pF pF 1.20 rD I F = 3 m A ; f = 200 M H z; B A 683 B A 682 1 1.5 0.7 1.2 rD I F = 10 m A ; f = 200 M H z; 0.5 0.9 www.kexin.com.cn 1