HIGH-SPEED 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM IDT709359/49L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 6.5/7.5/9ns (max.) – Industrial: 7.5ns (max.) Low-power operation – IDT709359/49L Active: 925mW (typ.) Standby: 2.5mW (typ.) Flow-Through or Pipelined output mode on either Port via the FT/PIPE pins Counter enable and reset features Dual chip enables allow for depth expansion without additional logic ◆ ◆ ◆ ◆ ◆ Full synchronous operation on both ports – 3.5ns setup to clock and 0ns hold on all control, data, and address inputs – Data input, address, and control registers – Fast 6.5ns clock to data out in the Pipelined output mode – Self-timed write allows fast cycle time – 10ns cycle time, 100MHz operation in Pipelined output mode Separate upper-byte and lower-byte controls for multiplexed bus and bus matching compatibility TTL- compatible, single 5V (±10%) power supply Industrial temperature range (–40°C to +85°C) is available for 83 MHz Available in a 100-pin Thin Quad Flatpack (TQFP) package and a 100-pin fine pitch Ball Grid Array (fpBGA) Functional Block Diagram R/WL R/WR UBL UBR CE0L 1 0 0/1 CE1L CE0R 1 0 0/1 CE1R LBL OEL LBR OER FT/PIPEL 0/1 1b 0b b a 0a 1a 1a 0a I/O9L-I/O17L a b 0b 1b 0/1 FT/PIPER I/O9R-I/O17R I/O Control I/O Control I/O0L-I/O8L I/O0R-I/O8R A12L(1) A0L CLKL ADSL CNTENL CNTRSTL A12R(1) Counter/ Address Reg. MEMORY ARRAY Counter/ Address Reg. A0R CLKR ADSR CNTENR CNTRSTR 5633 drw 01 NOTE: 1. A12 is a NC for IDT709349. AUGUST 2003 1 ©2003 Integrated Device Technology, Inc. DSC-5633/2 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Description The IDT709359/49 is a high-speed 8/4K x 18 bit synchronous DualPort RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. Industrial and Commercial Temperature Ranges With an input data register, the IDT709359/49 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 925mW of power. A8L A7L A6L A5L A4L A3L A2L A1L A0L CNTENL CLKL ADSL GND GND ADSR CLKR CNTENR A0R A1R A2R A3R A4R A5R A6R A7R Pin Configurations(1,2,3,4) 06/28/02 Index 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 2 74 3 73 A9L A10L A11L 1 A12L(1) NC NC NC LBL UBL CE0L CE1L CNTRSTL R/WL OEL VCC FT/PIPEL I/O17L I/O16L GND I/O15L I/O14L I/O13L I/O12L I/O11L I/O10L 4 72 5 71 6 70 7 69 8 68 9 67 10 11 12 13 709359/49PF PN100-1(5) 66 100-Pin TQFP Top View(6) 64 65 63 14 62 15 61 16 60 17 59 18 58 19 57 20 56 21 55 22 54 23 53 24 52 I/O9L I/O8L VCC I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/O1L I/O0L GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R VCC I/O7R I/O8R I/O9R I/O10R 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NOTES: 1. A12 is a NC for IDT709349. 2. All VCC pins must be connected to power supply. 3. All GND pins must be connected to ground. 4. Package body is approximately 14mm x 14mm x 1.4mm 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 2 6.42 A8R A9R A10R A11R A12R(1) NC NC NC LBR UBR CE0R CE1R CNTRSTR R/WR GND OER FT/PIPER I/O17R GND I/O16R I/O15R I/O14R I/O13R I/O12R I/O11R . 5633 drw 02 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Configurations (con't.)(1,2,3,4) 709359/49BF BF100(5) 100-Pin fpBGA Top View(6) 06/28/02 A1 A8R B1 A6R C1 A3R D1 A0R E1 A2 A11R B2 A7R C2 A4R D2 CLKR E2 GND ADSR F1 F2 GND CLKL G1 CNTENL H1 A2L J1 A5L K1 A8L G2 A4L H2 A6L J2 A9L K2 A10L A3 UBR B3 A6 A4 A5 CNTRSTR GND GND B4 B6 B5 A7 A8 A9 A10 GND I/O13R I/O10R I/O17R B7 B8 B9 B10 A10R A12R(1) R/WR OER PL/FTR I/O12R I/O9R I/O6R C3 A5R D3 A1R E3 CNTENR F3 A0L G3 A7L H3 A11L J3 C4 A9R D4 A2R E4 A1L F4 A3L G4 UBL H4 CE0L J4 A12L(1) R/WL K3 LBL K4 CE1L C5 C6 C7 C8 C10 C9 CE1R I/O16R I/O15R I/O11R I/O7R I/O3R D6 D5 E5 E6 ADSL E7 GND I/O4R F6 F5 VCC GND G5 G6 GND I/O13L H6 H5 CNTRST L J5 D7 D8 D9 D10 CE0R I/O14R I/O8R I/O5R I/O1R LBR F7 VCC G7 NC H7 E8 F8 I/O2L G8 I/O4L H8 I/O15L I/O9L I/O7L J6 J7 E9 E10 I/O2R I/O0R J8 F9 F10 I/O1L G9 VCC K6 VCC K7 K8 I/O0L G10 GND I/O3L H9 H10 I/O6L J9 K9 I/O5L J10 OEL PL/FTL I/O12L I/O10L GND K5 VCC I/O8L K10 I/O16L I/O14L I/O11L I/O17L 5633 drw 03 NOTES: 1. A12 is a NC for IDT709349. 2. All VCC pins must be connected to power supply. 3. All GND pins must be connected to ground. 4. Package body is approximately 14mm x 14mm x 1.4mm 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 6.42 3 , IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port Right Port Names CE0L, CE1L CE0R, CE1R Chip Enables (3) R/WL R/WR Read/Write Enable OEL Output Enable OER (1) (1) A0L - A12L A0R - A12R Address I/O0L - I/O17L I/O0R - I/O17R Data Input/Output CLKL CLKR Clock UBL UBR Upper Byte Select(2) LBL LBR Lower Byte Select(2) ADSL ADSR Address Strobe CNTENL CNTENR Counter Enable CNTRSTL CNTRSTR Counter Reset FT/PIPEL FT/PIPER Flow-Through/Pipeline VCC Power (5V) GND Ground (0V) NOTES: 1. A12 is a NC for IDT709349. 2. LB and UB are single buffered regardless of state of FT/PIPE. 3. CEo and CE1 are single buffered when FT/PIPE = VIL, CEo and CE 1 are double buffered when FT/PIPE = VIH, i.e. the signals take two cycles to deselect. 5633 tbl 01 Truth Table I—Read/Write and Enable Control(1,2,3) OE CLK CE0(5) CE1(5) UB(4) LB(4) R/W Upper Byte I/O9-17 Lower Byte I/O0-8 X ↑ H X X X X High-Z High-Z Deselected—Power Down X ↑ X L X X X High-Z High-Z Deselected—Power Down X ↑ L H H H X High-Z High-Z Both Bytes Deselected X ↑ L H L H L DATAIN High-Z Write to Upper Byte Only X ↑ L H H L L High-Z DATAIN Write to Lower Byte Only X ↑ L H L L L DATAIN DATAIN Write to Both Bytes L ↑ L H L H H DATAOUT High-Z Read Upper Byte Only L ↑ L H H L H High-Z DATAOUT Read Lower Byte Only L ↑ L H L L H DATAOUT DATAOUT Read Both Bytes H X L H X X X High-Z High-Z Outputs Disabled Mode 5633 tbl 02 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, CNTRST = X. 3. OE is an asynchronous input signa 4. LB and UB are single buffered regardless of state of FT/PIPE. 5. CEo and CE1 are single buffered when FT/PIPE = VIL. CEo and CE 1 are double buffered when FT/PIPE = VIH, i.e. the signals take two cycles to deselect. 4 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table II—Address Counter Control(1,2) External Address Previous Internal Address Internal Address Used CLK ADS CNTEN CNTRST I/O(3) An X An ↑ L(4) X H DI/O (n) (5) MODE External Address Used X An An + 1 ↑ H L H DI/O(n+1) Counter Enabled—Internal Address generation X An + 1 An + 1 ↑ H H H DI/O(n+1) External Address Blocked—Counter disab led (An + 1 reused) X (4) DI/O(0) X X A0 ↑ X L Counter Reset to Address 0 5633 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH. 3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle. 4. ADS and CNTRST are independent of all other signals including CE0, CE1, UB and LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE 0, CE1, UB and LB. . Recommended Operating Recommended DC Operating Temperature and Supply Voltage(1) Conditions Grade Commercial Industrial Symbol Ambient Temperature(1) GND Vcc 0OC to +70OC 0V 5.0V + 10% -40OC to +85OC 0V 5.0V + 10% 5633 tbl 04 NOTES: 1. Industrial temperature: for specific speeds, packages and powers contact your sales office. 2. This is the parameter TA. This is the "instant on" case temperature. Commercial & Industrial Unit Terminal Voltage with Respect to GND -0.5 to +7.0 V TBIAS Temperature Under Bias -55 to +125 o TSTG Storage Temperature -65 to +150 o IOUT DC Output Current (2) VTERM Rating Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V VCC Supply Voltage GND Ground VIH Input High Voltage 2.2 ____ 6.0(1) V VIL Input Low Voltage -0.5(2) ____ 0.8 V 5633 tbl 05 NOTES: 1. VTERM must not exceed V cc + 10%. 2. VIL > -1.5V for pulse width less than 10ns. (TA = +25°C, f = 1.0MHz) Symbol CIN COUT C C mA Parameter Input Capacitance (3) 50 Min. Capacitance(1) Absolute Maximum Ratings(1) Symbol Parameter Output Capacitance Conditions(2) Max. Unit V IN = 3dV 9 pF VOUT = 3dV 10 pF 5633 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. 5633 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%. 6.42 5 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range (VCC = 5.0V ± 10%) 709359/49L Symbol Parameter Test Conditions Min. Max. Unit |ILI| Input Leakage Current(1) VCC = 5.5V, VIN = 0V to VCC ___ 5 µA |ILO | Output Leakage Current CE0 = VIH or CE1 = VIL, VOUT = 0V to V CC ___ 5 µA VOL Output Low Voltage IOL = +4mA ___ 0.4 V VOH Output High Voltage IOH = -4mA 2.4 ___ V 5633 tbl 08 NOTE: 1. At Vcc < 2.0V input leakages are undefined. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3) (VCC = 5V ± 10%) 709359/49L6 Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Test Condition Version 709359/49L7 Com'l & Ind 709359/49L9 Com'l Only Typ. (4) Max. Typ. (4) Max. Typ. (4) Max. Unit mA Dynamic Operating Current (Both Ports Active) CEL and CER= VIL Outputs Disabled f = fMAX(1) COM'L L 230 430 210 400 185 360 IND L ____ ____ 210 440 ____ ____ Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH f = fMAX(1) COM'L L 45 115 40 105 35 95 IND L ____ ____ 40 120 ____ ____ Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(3) Active Port Outputs Disabled, f=fMAX(1) COM'L L 150 235 135 220 120 205 IND L ____ _____ 135 235 ____ ____ Full Standby Current (Both Ports CMOS Level Inputs) Both Ports CER and CEL > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(2) COM'L L 0.5 3.0 0.5 3.0 0.5 3.0 IND L ____ _____ 0.5 3.0 ____ ____ Full Standby Current (One Port CMOS Level Inputs) CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) VIN > VCC - 0.2V or VIN < 0.2V, Active Port Outputs Disabled , f = fMAX(1) COM'L L 160 210 130 190 110 170 IND L ____ _____ 130 205 ____ ____ mA mA mA mA 5633 tbl 09 NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC , using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. Vcc = 5V, TA = 25°C for Typ, and are not production tested. ICC DC(f=0) = 150mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V "X" represents "L" for left port or "R" for right port. 6 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions GND to 3.0V Input Pulse Levels 2ns Max. Input Rise/Fall Times Input Timing Reference Levels 1.5V Output Reference Levels 1.5V Figures 1, 2 and 3 Output Load 5633 tbl 10 5V 5V 893Ω 893Ω DATAOUT DATAOUT 30pF 347Ω 5633 drw 04 5633 drw 05 Figure 1. AC Output Test load. 8 7 Figure 2. Output Test Load (For tCKLZ, t CKHZ, tOLZ, and tOHZ). *Including scope and jig. - 10pF is the I/O capacitance of this device, and 30pF is the AC Test Load Capacitance 6 tCD1, tCD2 (Typical, ns) 5 4 3 2 1 0 -1 5pF* 347Ω 20 40 60 80 100 120 140 160 180 200 Capacitance (pF) 5633 drw 06 Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 7 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(3) (VCC = 5V ± 10%, TA = 0°C to +70°C) 709359/49L6 Com'l Only Symbol tCYC1 Parameter Clock Cycle Time (Flow-Through)(2) (2) 709359/49L9 Com'l Only Min. Max. Min. Max. Min. Max. Unit 19 ____ 22 ____ 25 ____ ns 10 ____ 12 ____ 15 ____ ns tCH1 (2) Clock High Time (Flow-Through) 6.5 ____ 7.5 ____ 12 ____ ns tCL1 Clock Low Time (Flow-Through)(2) 6.5 ____ 7.5 ____ 12 ____ ns (2) 4 ____ 5 ____ 6 ____ ns (2) 4 ____ 5 ____ 6 ____ ns tCYC2 tCH2 Clock Cycle Time (Pipelined) 709359/49L7 Com'l & Ind Clock High Time (Pipelined) tCL2 Clock Low Time (Pipelined) tR Clock Rise Time ____ 3 ____ 3 ____ 3 ns tF Clock Fall Time ____ 3 ____ 3 ____ 3 ns tSA Address Setup Time 3.5 ____ 4 ____ 4 ____ ns tHA Address Hold Time 0 ____ 0 ____ 1 ____ ns tSC Chip Enable Setup Time 3.5 ____ 4 ____ 4 ____ ns tHC Chip Enable Hold Time 0 ____ 0 ____ 1 ____ ns tSB Byte Enable Setup Time 3.5 ____ 4 ____ 4 ____ ns tHB Byte Enable Hold Time 0 ____ 0 ____ 1 ____ ns tSW R/W Setup Time 3.5 ____ 4 ____ 4 ____ ns tHW R/W Hold Time 0 ____ 0 ____ 1 ____ ns tSD Input Data Setup Time 3.5 ____ 4 ____ 4 ____ ns tHD Input Data Hold Time 0 ____ 0 ____ 1 ____ ns ADS Setup Time 3.5 ____ 4 ____ 4 ____ ns tHAD ADS Hold Time 0 ____ 0 ____ 1 ____ ns tSCN CNTEN Setup Time 3.5 ____ 4 ____ 4 ____ ns CNTEN Hold Time 0 ____ 0 ____ 1 ____ ns CNTRST Setup Time 3.5 ____ 4 ____ 4 ____ ns tHRST CNTRST Hold Time 0 ____ 0 ____ 1 ____ ns tOE Output Enable to Data Valid ____ 6.5 ____ 7.5 ____ 9 ns tOLZ Output Enable to Output Low-Z(1) 2 ____ 2 ____ 2 ____ ns tOHZ (1) Output Enable to Output High-Z tCD1 Clock to Data Valid (Flow-Through)(2) tSAD tHCN tSRST (2) tCD2 Clock to Data Valid (Pipelined) tDC Data Output Hold After Clock High 1 7 1 7 1 7 ns ____ 15 ____ 18 ____ 20 ns ____ 6.5 ____ 7.5 ____ 9 ns 2 ____ 2 ____ 2 ____ ns tCKHZ (1) Clock High to Output High-Z 2 9 2 9 2 9 ns tCKLZ Clock High to Output Low-Z(1) 2 ____ 2 ____ 2 ____ ns Port-to-Port Delay tCWDD Write Port Clock High to Read Data Delay ____ 24 ____ 28 ____ 35 ns tCCS Clock-to-Clock Setup Time ____ 9 ____ 10 ____ 15 ns 5633 tbl 11 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characterization, but is not production tested. 2. The Pipelined output parameters (tCYC2, t CD2) to either the Left or Right ports when FT/PIPE = VIH. Flow-Through parameters (tCYC1, tCD1) apply when FT/PIPE = VIL for that port. 3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPER and FT/PIPEL. 8 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Flow-Through Output (FT/PIPE"X" = VIL)(3,7) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC tSB tHB tSC tHC tSB tHB CE1 UB, LB R/W (5) ADDRESS tSW tHW tSA tHA An An + 1 An + 2 tCD1 tCKHZ (1) Qn DATAOUT tCKLZ OE An + 3 tDC Qn + 1 (1) tOHZ Qn + 2 (1) tOLZ tDC (1) (2) tOE 5633 drw 07 Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE"X" = VIH)(3,7) tCYC2 tCH2 tCL2 CLK CE0 tSC tSC tHC tHC (4) CE1 UB, LB R/W (5) ADDRESS tSB tSB tHB tHB (6) tSW tHW tSA tHA An An + 1 (1 Latency) An + 2 tDC tCD2 DATAOUT Qn tCKLZ An + 3 Qn + 1 (1) tOHZ Qn + 2 (1) tOLZ (6) (1) (2) OE tOE NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 3. ADS = VIL, CNTEN and CNTRST = VIH. 4. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, following the next rising edge of the clock. Refer to Truth Table 1. 5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 7. "X" here denotes Left or Right port. The diagram is with respect to that port. 6.42 9 5633 drw 08 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of a Bank Select Pipelined Read(1,2) tCH2 tCYC2 tCL2 CLK tSA A0 ADDRESS(B1) CE0(B1) tHA tSC A6 A5 A4 A3 A2 A1 tHC tSC tHC tCD2 Q0 DATAOUT(B1) tCD2 Q3 tCKLZ (3) tCKHZ (3) tHA A0 ADDRESS(B2) tCKHZ Q1 tDC tDC tSA (3) tCD2 A6 A5 A4 A3 A2 A1 tSC tHC CE0(B2) tSC tHC tCKHZ (3) tCD2 DATAOUT(B2) tCKLZ (3) Q2 tCD2 Q4 tCKLZ (3) 5633 drw 09 Timing Waveform of Write with Port-to-Port Flow-Through Read(4,5,7) CLK "A" tSW tHW tSA tHA R/W "A" ADDRESS "A" tSD DATAIN "A" NO MATCH MATCH tHD VALID tCCS (6) CLK "B" tCD1 R/W "B" ADDRESS "B" tSW tHW tSA tHA NO MATCH MATCH tCWDD (6) tCD1 DATAOUT "B" VALID VALID tDC tDC 5633 drw 10 NOTES: 1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT709359/49 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1) , CE1(B2), R/W, CNTEN, and CNTRST = VIH. 3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD . If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. t CWDD does not apply in this case. 7. All timing is the same for both Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite from Port "A". 10 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3) tCYC2 tCH2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W (4) ADDRESS tSW tHW An tSA tHA An +1 An + 2 An + 3 An + 2 An + 4 tSD tHD DATAIN Dn + 2 tCD2 (2) tCKHZ (1) (1) tCKLZ tCD2 Qn + 3 Qn DATAOUT (5) READ NOP WRITE READ 5633 drw 11 Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(3) tCYC2 tCH2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W (4) ADDRESS tSW tHW An tSA tHA An +1 An + 2 tSD DATAIN An + 4 An + 5 tHD Dn + 2 tCD2 (2) An + 3 Dn + 3 tCKLZ(1) tCD2 Qn DATAOUT Qn + 4 tOHZ(1) OE READ WRITE READ 5633 drw 12 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE 0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 11 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(3) tCH1 tCYC1 tCL1 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W tSW tHW (4) ADDRESS tSA An tHA An +1 An + 2 An + 4 An + 3 An + 2 tSD tHD DATAIN Dn + 2 tCD1 (2) tCD1 Qn DATAOUT tCD1 tCD1 Qn + 3 Qn + 1 tDC tCKHZ (5) NOP READ (1) (1) tCKLZ WRITE tDC READ 5633 drw 13 Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(3) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W tSW tHW (4) ADDRESS tSA An tHA An +1 An + 2 DATAIN Dn + 2 (2) DATAOUT An + 3 An + 4 An + 5 tSD tHD Dn + 3 tDC tCD1 Qn tOE tCD1 (1) tOHZ tCKLZ (1) tCD1 Qn + 4 tDC OE READ WRITE READ 5633 drw 14 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 12 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 tCYC2 tCL2 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qn + 2(2) Qn + 1 Qn Qx Qn + 3 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5633 drw 15 Timing Waveform of Flow-Through Read with Address Counter Advance(1) tCH1 tCYC1 tCL1 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tCD1 DATAOUT Qx(2) Qn Qn + 1 Qn + 2 Qn + 3(2) Qn + 4 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5633 drw 16 NOTES: 1. CE 0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = VIH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 13 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance (Flow-Through or Pipelined Outputs)(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS INTERNAL(3) ADDRESS An(7) An + 2 An + 1 An + 4 An + 3 tSAD tHAD ADS CNTEN tSD tHD Dn + 1 Dn DATAIN WRITE EXTERNAL ADDRESS Dn + 1 Dn + 4 Dn + 3 Dn + 2 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 5633 drw 17 Timing Waveform of Counter Reset (Pipelined Outputs)(2) tCH2 tCYC2 tCL2 CLK tSA tHA ADDRESS(4) INTERNAL(3) ADDRESS An Ax(6) 0 1 An + 2 An + 1 An + 1 An tSW tHW R/W ADS CNTEN tSRST tHRST CNTRST tSD tHD D0 DATAIN Qn Q1 Q0 DATAOUT(5) . COUNTER(6) RESET WRITE ADDRESS 0 READ ADDRESS 0 READ ADDRESS 1 READ ADDRESS n READ ADDRESS n+1 5633 drw 18 NOTES: 1. CE0, UB, LB, and R/W = V IL; CE1 and CNTRST = VIH. 2. CE0, UB, LB = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. 7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’ Address is written to during this cycle. 14 6.42 IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges A Functional Description Depth and Width Expansion The IDT709359/49 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. CE0 = VIH or CE1 = VIL for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT709359/49's for depth expansion configurations. When the Pipelined output mode is enabled, two cycles are required with CE0 = VIL and CE1 = VIH to re-activate the outputs. The IDT709359/49 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT709359/49 can also be used in applications requiring expanded width, as indicated in Figure 4. Since the banks are allocated at the discretion of the user, the external controller can be set up to drive the input signals for the various devices as required to allow for 36-bit or wider applications. A13/A12(1) IDT709359/49 CE0 CE1 CE1 VCC CE1 IDT709359/49 VCC CE1 CE0 CE0 Control Inputs CE0 Control Inputs Control Inputs IDT709359/49 IDT709359/49 Control Inputs 5633 drw 19 Figure 4. Depth and Width Expansion with IDT709359/49 NOTE: 1. A 13 is for IDT709359, A 12 is for IDT709349. 6.42 15 CNTRST CLK ADS CNTEN R/W LB, UB OE IDT709359/49L High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX A 99 A A Device Type Power Speed Package Process/ Temperature Range Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) PF BF 100-pin TQFP (PN100-1) 100-pin fpBGA (BF100) 6 7 9 Commercial Only Commercial & Industrial Commercial Only L Low Power Speed in nanoseconds 709359 144K (8K x 18-Bit) Synchronous Dual-Port RAM 709349 72K (4K x 18-Bit) Synchronous Dual-Port RAM 5633 drw 20 NOTE: 1. Contact your local sales office for industrial temp range for other speeds, packages and powers. IDT Clock Solution for IDT709359/49 Dual-Port Dual-Port I/O Specitications Clock Specifications IDT Dual-Port Part Number Voltage I/O Input Capacitance Input Duty Cycle Requirement 709359/49 5 TTL 9pF 40% Maximum Jitter Frequency Tolerance 100 150ps IDT PLL Clock Device IDT Non-PLL Clock Device FCT88915TT 49FCT805T 49FCT806T 74FCT807T 5633 tbl 12 Datasheet Document History 07/08/02: 08/18/03: Initial Public Release Removed Preliminary status Page 16 Added IDT Clock Solution Table CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-611 6 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 16 6.42 for Tech Support: 831-754-4613 [email protected]