AUIRL7766M2TR AUTOMOTIVE GRADE Advanced Process Technology Optimized for Automotive DC-DC and other Heavy Load Applications Logic Level Gate Drive Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free Automotive Qualified * Automotive DirectFET® Power MOSFET V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg (typical) D SC M2 S S S S G D DirectFET® ISOMETRIC M4 Applicable DirectFET® Outline and Substrate Outline SB 100V 8.0m 10m 51A 44nC M4 L4 L6 L8 Description The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number AUIRL7766M2 Package Type DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number AUIRL7766M2TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (Tested) IAR EAR TP TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 100 ±16 51 36 10 204 62.5 2.5 61 237 See Fig. 16, 17, 18a, 18b 270 -55 to + 175 Units V A W mJ A mJ °C HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRL7766M2TR Thermal Resistance Symbol Parameter Junction-to-Ambient RJA Junction-to-Ambient RJA Junction-to-Ambient RJA Junction-to-Can RJ-Can Junction-to-PCB Mounted RJ-PCB Linear Derating Factor Typ. ––– 12.5 20 ––– 1.0 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ––– 0.067 ––– V/°C V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 8.0 10 Static Drain-to-Source On-Resistance RDS(on) m ––– 8.7 10.5 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V Gate Threshold Voltage Coefficient ––– -7.3 ––– mV/°C VGS(th)/TJ gfs Forward Transconductance 110 ––– ––– S RG Internal Gate Resistance ––– 0.88 ––– ––– ––– 5.0 IDSS Drain-to-Source Leakage Current µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 44 66 Qgs1 Gate-to-Source Charge ––– 9.6 ––– Qgs2 Gate-to-Source Charge ––– 4.5 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 19 ––– Qgodr Gate Charge Overdrive ––– 10.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 23.5 ––– Qoss Output Charge ––– 35 ––– nC td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 24 ––– ns td(off) Turn-Off Delay Time ––– 120 ––– tf Fall Time ––– 49 ––– Ciss Input Capacitance ––– 5305 ––– Coss Output Capacitance ––– 460 ––– Crss Reverse Transfer Capacitance ––– 195 ––– pF Coss Output Capacitance ––– 2735 ––– Coss Output Capacitance ––– 270 ––– Coss eff. Effective Output Capacitance ––– 370 ––– Max. 60 ––– ––– 2.4 ––– 0.42 Units °C/W W/°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5.0mA VGS = 10V, ID = 31A VGS = 4.5V, ID = 26A VDS = VGS, ID = 150µA VDS = 25V, ID = 31A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V Conditions VDS = 50V VGS = 4.5V ID = 31A See Fig. 11 VDS = 16V, VGS = 0V VDD = 50V ID = 31A RG = 6.8 VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0 MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz VGS = 0V, VDS = 80V, ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 80V Notes through are on page 3 2 2015-12-11 AUIRL7766M2TR Diode Characteristics Symbol Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Surface mounted on 1 in. square Cu board (still air). Min. Typ. Max. Units ––– ––– 51 ––– ––– 204 ––– ––– ––– ––– 45 83 1.3 68 125 D A Mounted to a PCB with small clip heatsink (still air) Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 25V dv/dt = 100A/µs G S V ns nC Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET® Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.13mH, RG = 50, IAS = 31A, VGS = 20V. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at TJ of approximately 90°C. 3 2015-12-11 AUIRL7766M2TR 1000 1000 TOP ID, Drain-to-Source Current (A) Tj = 25°C 60µs PULSE WIDTH VGS 15V 10V 7.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM Tj = 175°C ID, Drain-to-Source Current (A) 60µs PULSE WIDTH TOP 100 10 1 BOTTOM VGS 15V 10V 7.0V 4.5V 3.5V 3.0V 2.8V 2.5V 2.5V 10 2.5V 1 0.1 0.1 1 10 100 0.1 1000 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics RDS(on), Drain-to -Source On Resistance ( m) R DS(on) , Drain-to -Source On Resistance ( m) ID = 31A 20 T J = 125°C 10 T J = 25°C 5 0 2 4 6 8 10 12 14 1000 30 T J = 125°C 20 T J = 25°C 10 Vgs = 10V 0 16 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) Fig. 3 Typical On-Resistance vs. Gate Voltage Fig. 4 Typical On-Resistance vs. Drain Current 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 40 VGS, Gate -to -Source Voltage (V) T J = -40°C 100 T J = 25°C T J = 175°C 10 1 VDS = 50V 60µs PULSE WIDTH 0.1 1 2 3 4 VGS, Gate-to-Source Voltage (V) Fig 5. Transfer Characteristics 4 10 Fig. 2 Typical Output Characteristics 25 15 1 V DS, Drain-to-Source Voltage (V) 5 ID = 31A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature 2015-12-11 AUIRL7766M2TR 1000 2.5 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 3.0 2.0 ID = 150µA ID = 250µA 1.5 ID = 1.0mA ID = 1.0A 1.0 100 T J = -40°C T J = 25°C T J = 175°C 10 VGS = 0V 1.0 0.5 -75 -50 -25 0 0.0 25 50 75 100 125 150 175 100000 0.8 1.0 1.2 Coss = Cds + Cgd 150 T J = 175°C 50 0.6 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd T J = 25°C C, Capacitance (pF) Gfs, Forward Transconductance (S) 250 100 0.4 Fig 8. Typical Source-Drain Diode Forward Voltage Fig. 7 Typical Threshold Voltage vs. Junction Temperature 200 0.2 VSD , Source-to-Drain Voltage (V) T J , Temperature ( °C ) 10000 C iss C oss 1000 C rss V DS = 5.0V 380µs PULSE WIDTH 100 0 0 20 40 60 80 100 1 120 10 100 VDS , Drain-to-Source Voltage (V) ID ,Drain-to-Source Current (A) Fig 9. Typical Forward Trans conductance vs. Drain Current Fig 10. Typical Capacitance vs. Drain-to-Source Voltage 60 14.0 12.0 50 VDS = 80V VDS = 50V 10.0 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) ID = 31A VDS = 20V 8.0 6.0 4.0 30 20 10 2.0 0 0.0 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 11. Typical Gate Charge vs. Gate-to-Source Voltage 5 40 120 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 2015-12-11 AUIRL7766M2TR 250 OPERATION IN THIS AREA LIMITED BY R DS (on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 1000 100µsec 100 1msec 10msec 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse ID TOP 6.7A 17A BOTTOM 31A 200 150 100 0.1 50 0 0 1 10 100 1000 25 VDS , Drain-to-Source Voltage (V) 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Temperature Fig 13. Maximum Safe Operating Area Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 C Ri (°C/W) 0.07641 i (sec) 0.000021 0.36635 0.000737 0.94890 0.0391496 1.00767 0.0073206 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 100 10 0.01 0.05 1 0.1 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current vs. Pulse Width 6 2015-12-11 AUIRL7766M2TR 70 60 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 15) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 31A 50 40 30 20 10 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature Fig 18a. Unclamped Inductive Test Circuit PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 18b. Unclamped Inductive Waveforms VDD Fig 19a. Gate Charge Test Circuit Fig 20a. Switching Time Test Circuit 7 Fig 19b. Gate Charge Waveform Fig 20b. Switching Time Waveforms 2015-12-11 AUIRL7766M2TR DirectFET® Board Footprint, M4 (Medium Size Can). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S S S S G D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-12-11 AUIRL7766M2TR DirectFET® Outline Dimension, M4 Outline (Medium Size Can). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J K L L1 M P R METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 0.78 0.82 0.78 0.82 0.78 0.82 0.38 0.42 1.10 1.20 2.30 2.40 3.50 3.60 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.023 0.024 0.031 0.032 0.031 0.032 0.031 0.032 0.015 0.017 0.043 0.047 0.090 0.094 0.138 0.142 0.027 0.029 0.003 0.007 0.001 0.003 DirectFET® Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-12-11 AUIRL7766M2TR DirectFET® Tape & Reel Dimension (Showing component orientation) F E A B C D G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, ordered as AUIRL7766M2TR. REEL DIMENSIONS STANDARD OPTION(QTY 4800) IMPERIAL METRIC MIN CODE MAX MIN MAX 12.992 N.C A 330.0 N.C 0.795 B 20.2 N.C N.C 0.504 C 0.520 12.8 13.2 0.059 D 1.5 N.C N.C 3.937 E 100.0 N.C N.C F N.C N.C 0.724 18.4 G 0.488 12.4 0.567 14.4 H 0.469 11.9 0.606 15.4 LOADED TAPE FEED DIRECTION A H F C D B E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-12-11 AUIRL7766M2TR Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Medium Can MSL1 Class M4 (+/- 800V)† AEC-Q101-002 Class H2 (+/- 3000V)† AEC-Q101-001 N/A AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 12/11/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Updated Tape and Reel option on page 10 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-12-11