Diodes DMP2130L P-channel enhancement mode mosfet Datasheet

DMP2130L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features

Mechanical Data

Low RDS(ON):

75 m @VGS = -4.5V

110 m @VGS = -2.7V

125 m @VGS = -2.5V
Case: SOT23

Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Halogen and Antimony Free. “Green” Device (Note 3)

Terminal Connections: See Diagram Below
Qualified to AEC-Q101 Standards for High Reliability

Weight: 0.008 grams (approximate)

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


Drain
SOT23
D
Gate
Top View
Internal Schematic
Top View
S
G
Source
Ordering Information (Note 4)
Part Number
DMP2130L-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
MP1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
YM
MP1
YM
Marking Information
MP1
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
Code
2007
U
2008
V
Month
Code
Jan
1
Feb
2
DMP2130L
Document number: DS31346 Rev. 5 - 2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
October 2013
© Diodes Incorporated
DMP2130L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source Voltage
Characteristic
VDSS
-20
V
Gate-Source Voltage
VGSS
12
V
ID
-3.0
-2.4
A
IDM
-15
A
IS
2.0
A
Symbol
Value
Unit
PD
1.4
W
RJA
90
°C/W
TJ, TSTG
-55 to +150
°C
Drain Current (Note 5) Continuous
TA = +25°C
TA = +70°C
Pulsed Drain Current (Note 6)
Body-Diode Continuous Current (Note 5)
Unit
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5); Steady-State
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
BVDSS
IDSS
Unit
Test Condition
-20


V
ID = -250µA, VGS = 0V


-1
µA
VDS = -20V, VGS = 0V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
TJ = 25C
IGSS


100
nA
VDS = 0V, VGS = 12V
Gate Threshold Voltage
VGS(th)
-0.6

-1.25
V
VDS = VGS, ID = -250µA
On State Drain Current (Note 7)
ID (ON)
-15


A
VGS = -4.5V, VDS = -5V
RDS(ON)

51
87
99
75
110
125
m
VGS = -4.5V, ID = -3.5A
VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
gFS

7.3

S
VDS = -10V, ID = -3.0A
VSD

0.79
-1.26
V
IS = -1.7A, VGS = 0V
IS


1.7
A

Total Gate Charge
Qg

7.3

nC
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Source Charge
Qgs

2.0

nC
VGS = -4.5V, VDS = -10V, ID = -3.0A
VGS = -4.5V, VDS = -10V, ID = -3.0A
Gate-Body Leakage Current
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7)
Diode Forward Voltage (Note 7)
Maximum Body-Diode Continuous Current (Note 5)
DYNAMIC PARAMETERS (Note 8)
Gate-Drain Charge
Qgd

1.9

nC
Turn-On Delay Time
tD(on)

12

ns
Turn-On Rise Time
tr

20

ns
Turn-Off Delay Time
tD(off)

38

ns
Turn-Off Fall Time
tf

41

ns
Input Capacitance
Ciss

443

pF
Output Capacitance
Coss

128

pF
Reverse Transfer Capacitance
Crss

101

pF
Notes:
VDS = -10V, VGS = -4.5V,
RL = 10, RG = 6
VDS = -16V, VGS = 0V
f = 1.0MHz
5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
6. Repetitive Rating, pulse width limited by junction temperature.
7. Test pulse width t = 300µs.
8. Guaranteed by design. Not subject to production testing.
DMP2130L
Document number: DS31346 Rev. 5 - 2
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October 2013
© Diodes Incorporated
DMP2130L
VDS = -5V
Pulsed
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
CT, CAPACITANCE (pF)
Ciss
VGS = -2.5V
Coss
Crss
f = 1 MHz
VGS = 0V
VGS = -4.5V
VGS = -10V
0
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
-ID = 250µA
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 4 Typical Total Capacitance
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS = -4.5V
ID = -3.0A
VGS = -10V
ID = -3.5A
VGS = -2.5V
ID = -1.0A
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMP2130L
Document number: DS31346 Rev. 5 - 2
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© Diodes Incorporated
DMP2130L
100
-ID, DRAIN CURRENT (A)
PW = 10µs
10
1
RDS(on)
Limited
DC
PW = 10s
PW = 1s
PW = 100ms
0.1
PW = 10ms
PW = 1ms
PW = 100µs
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 SOA, Safe Operation Area
100
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
M
K1
D
F
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
X
DMP2130L
Document number: DS31346 Rev. 5 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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October 2013
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DMP2130L
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Copyright © 2013, Diodes Incorporated
www.diodes.com
DMP2130L
Document number: DS31346 Rev. 5 - 2
5 of 5
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October 2013
© Diodes Incorporated
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