DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): 75 m @VGS = -4.5V 110 m @VGS = -2.7V 125 m @VGS = -2.5V Case: SOT23 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Halogen and Antimony Free. “Green” Device (Note 3) Terminal Connections: See Diagram Below Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (approximate) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Drain SOT23 D Gate Top View Internal Schematic Top View S G Source Ordering Information (Note 4) Part Number DMP2130L-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. MP1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM MP1 YM Marking Information MP1 Shanghai A/T Site Chengdu A/T Site Date Code Key Year Code 2007 U 2008 V Month Code Jan 1 Feb 2 DMP2130L Document number: DS31346 Rev. 5 - 2 2009 W Mar 3 2010 X Apr 4 2011 Y May 5 2012 Z Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D October 2013 © Diodes Incorporated DMP2130L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS 12 V ID -3.0 -2.4 A IDM -15 A IS 2.0 A Symbol Value Unit PD 1.4 W RJA 90 °C/W TJ, TSTG -55 to +150 °C Drain Current (Note 5) Continuous TA = +25°C TA = +70°C Pulsed Drain Current (Note 6) Body-Diode Continuous Current (Note 5) Unit Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5); Steady-State Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max BVDSS IDSS Unit Test Condition -20 V ID = -250µA, VGS = 0V -1 µA VDS = -20V, VGS = 0V STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C IGSS 100 nA VDS = 0V, VGS = 12V Gate Threshold Voltage VGS(th) -0.6 -1.25 V VDS = VGS, ID = -250µA On State Drain Current (Note 7) ID (ON) -15 A VGS = -4.5V, VDS = -5V RDS(ON) 51 87 99 75 110 125 m VGS = -4.5V, ID = -3.5A VGS = -2.7V, ID = -3.0A VGS = -2.5V, ID = -2.6A gFS 7.3 S VDS = -10V, ID = -3.0A VSD 0.79 -1.26 V IS = -1.7A, VGS = 0V IS 1.7 A Total Gate Charge Qg 7.3 nC VGS = -4.5V, VDS = -10V, ID = -3.0A Gate-Source Charge Qgs 2.0 nC VGS = -4.5V, VDS = -10V, ID = -3.0A VGS = -4.5V, VDS = -10V, ID = -3.0A Gate-Body Leakage Current Static Drain-Source On-Resistance (Note 7) Forward Transconductance (Note 7) Diode Forward Voltage (Note 7) Maximum Body-Diode Continuous Current (Note 5) DYNAMIC PARAMETERS (Note 8) Gate-Drain Charge Qgd 1.9 nC Turn-On Delay Time tD(on) 12 ns Turn-On Rise Time tr 20 ns Turn-Off Delay Time tD(off) 38 ns Turn-Off Fall Time tf 41 ns Input Capacitance Ciss 443 pF Output Capacitance Coss 128 pF Reverse Transfer Capacitance Crss 101 pF Notes: VDS = -10V, VGS = -4.5V, RL = 10, RG = 6 VDS = -16V, VGS = 0V f = 1.0MHz 5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 6. Repetitive Rating, pulse width limited by junction temperature. 7. Test pulse width t = 300µs. 8. Guaranteed by design. Not subject to production testing. DMP2130L Document number: DS31346 Rev. 5 - 2 2 of 5 www.diodes.com October 2013 © Diodes Incorporated DMP2130L VDS = -5V Pulsed -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics CT, CAPACITANCE (pF) Ciss VGS = -2.5V Coss Crss f = 1 MHz VGS = 0V VGS = -4.5V VGS = -10V 0 -ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage -ID = 250µA 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 4 Typical Total Capacitance RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS = -4.5V ID = -3.0A VGS = -10V ID = -3.5A VGS = -2.5V ID = -1.0A TA, AMBIENT TEMPERATURE (C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMP2130L Document number: DS31346 Rev. 5 - 2 3 of 5 www.diodes.com October 2013 © Diodes Incorporated DMP2130L 100 -ID, DRAIN CURRENT (A) PW = 10µs 10 1 RDS(on) Limited DC PW = 10s PW = 1s PW = 100ms 0.1 PW = 10ms PW = 1ms PW = 100µs 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 SOA, Safe Operation Area 100 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K J M K1 D F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. Y Z C X DMP2130L Document number: DS31346 Rev. 5 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com October 2013 © Diodes Incorporated DMP2130L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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