ON BZX84C24LT1 Zener voltage regulator Datasheet

BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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3
Cathode
1
Anode
Features
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
Pb−Free Packages are Available
MARKING
DIAGRAM
3
1
2
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
SOT−23
CASE 318
STYLE 8
xxx M G
G
1
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Symbol
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
Package
Shipping †
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
BZX84BxxxLT3
SOT−23
10,000/Tape & Reel
BZX84BxxxLT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
Device
BZX84CxxxLT1
BZX84CxxxLT1G
BZX84CxxxLT3
PD
300
2.4
417
mW
mW/°C
°C/W
−65 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
BZX84CxxxLT3G
BZX84BxxxLT1
BZX84BxxxLT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 11
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
QVZ
C
IF
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Zener Voltage Regulator
Max. Capacitance @ VR = 0 and f = 1 MHz
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2
V
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1 =
5 mA
BZX84C2V4LT1, G
Z11
2.2
2.4
2.6
BZX84C2V7LT1, G
Z12
2.5
2.7
2.9
BZX84C3V0LT1, G
Z13
2.8
3
BZX84C3V3LT1, G
Z14
3.1
BZX84C3V6LT1, G
Z15
3.4
BZX84C3V9LT1, G
Z16
BZX84C4V3LT1, G
BZX84C4V7LT1, G
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min
Max
ZZT2
(W)
@ IZT2 =
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.6
3.8
90
3.7
3.9
4.1
W9
4
4.3
Z1
4.4
4.7
BZX84C5V1LT1, G
Z2
4.8
BZX84C5V6LT1, G
Z3
5.2
BZX84C6V2LT1, G
Z4
BZX84C6V8LT1, G
BZX84C7V5LT1, G
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Max Reverse
Leakage
Current
Min
Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
50
600
3
3.6
50
20
2.7
600
3.3
3.9
50
2.3
2.9
600
3.6
4.2
2.7
3.3
600
3.9
4.5
90
2.9
3.5
600
4.1
4.6
90
3.3
4
600
5
80
3.7
4.7
500
5.1
5.4
60
4.2
5.3
5.6
6
40
4.8
6
5.8
6.2
6.6
10
5.6
Z5
6.4
6.8
7.2
15
Z6
7
7.5
7.9
15
BZX84C8V2LT1, G
Z7
7.7
8.2
8.7
BZX84C9V1LT1, G
Z8
8.5
9.1
BZX84C10LT1, G
Z9
9.4
10
BZX84C11LT1, G
Y1
10.4
11
BZX84C12LT1, G
Y2
11.4
BZX84C13LT1, G
Y3
12.4
BZX84C15LT1, G
Y4
BZX84C16LT1, G
BZX84C18LT1, G
qVZ
(mV/k)
@ IZT1 = 5 mA
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
1
−3.5
0
450
1
−3.5
0
450
10
1
−3.5
0
450
40
5
1
−3.5
0
450
40
5
1
−3.5
0
450
4.7
30
3
1
−3.5
−2.5
450
4.4
5.1
30
3
1
−3.5
0
450
4.5
5.4
15
3
2
−3.5
0.2
260
480
5
5.9
15
2
2
−2.7
1.2
225
400
5.2
6.3
10
1
2
−2.0
2.5
200
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1, G
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1, G
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1, G
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
Device*
VZ1 Below
@ IZT1 = 2 mA
VZ2 Below
@ IZT2 = 0.1 mA
VZ3 Below
@ IZT3 = 10 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1 =
2 mA
Min
Max
ZZT2
Below
@ IZT4 =
0.5 mA
Min
Max
ZZT3
Below
@ IZT3 =
10 mA
BZX84C27LT1, G
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
BZX84C30LT1, G
Y11
28
30
32
80
27.8
32
300
28.1
32.4
BZX84C33LT1, G
Y12
31
33
35
80
30.8
35
325
31.1
BZX84C36LT1, G
Y13
34
36
38
90
33.8
38
350
34.1
BZX84C39LT1, G
Y14
37
39
41
130
36.7
41
350
BZX84C43LT1, G
Y15
40
43
46
150
39.7
46
BZX84C47LT1, G
Y16
44
47
50
170
43.7
50
BZX84C51LT1, G
Y17
48
51
54
180
47.6
BZX84C56LT1, G
Y18
52
56
60
200
51.5
BZX84C62LT1, G
Y19
58
62
66
215
BZX84C68LT1, G
Y20
64
68
72
BZX84C75LT1, G
Y21
70
75
79
Device
IR
mA
VR
@ Volts
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
VR
(V)
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
0.05
18.9
21.4
25.3
70
50
0.05
21
24.4
29.4
70
35.4
55
0.05
23.1
27.4
33.4
70
38.4
60
0.05
25.2
30.4
37.4
70
37.1
41.5
70
0.05
27.3
33.4
41.2
45
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
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3
IR
mA
@
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ (Volts) @ IZT = 5 mA
(Note 4)
IR
mA
qVZ
(mV/k)
@ IZT = 5 mA
Volts
Min
Max
C (pF)
@ VR =0,
f = 1 MHz
3
2
−3.5
0.2
260
2
2
−2.7
1.2
225
40
1
2
−2
2.5
200
6.32
10
3
4
0.4
3.7
185
6.94
15
2
4
1.2
4.5
155
7.5
7.65
15
1
5
2.5
5.3
140
8.04
8.2
8.36
15
0.7
5
3.2
6.2
135
8.92
9.1
9.28
15
0.5
6
3.8
7
130
T19
15.7
16
16.3
40
0.05
11.2
10.4
14
105
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
100
Device
Marking
Min
Nom
Max
Max
BZX84B4V7LT1, G
T10
4.61
4.7
4.79
80
BZX84B5V1LT1, G
T11
5.00
5.1
5.20
60
BZX84B5V6LT1, G
T12
5.49
5.6
5.71
BZX84B6V2LT1, G
T13
6.08
6.2
BZX84B6V8LT1, G
T14
6.66
6.8
BZX84B7V5LT1, G
T15
7.35
BZX84B8V2LT1, G
T16
BZX84B9V1LT1, G
T17
BZX84B16LT1, G
BZX84B18LT1, G
Device
Max Reverse
Leakage
Current
ZZT (W) @
IZT = 5 mA
(Note 4)
VR
@
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
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4
BZX84B4V7LT1, BZX84C2V4LT1 Series
8
100
7
θ VZ , TEMPERATURE COEFFICIENT (mV/°C)
θ VZ , TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
VZ @ IZT
10
2
1
0
−1
−2
−3
TYPICAL TC VALUES
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
100
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (Ω )
1000
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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5
1.1
1.2
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (μA)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
10
1
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
10
1
+150°C
0.1
0.01
0.001
+25 °C
0.0001
−55 °C
0.00001
0
10
Figure 5. Typical Capacitance
100
TA = 25°C
10
1
0.1
0.01
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
80
Figure 6. Typical Leakage Current
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
100
20
10
10
1
0.1
0.01
12
TA = 25°C
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
90
BZX84B4V7LT1, BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
VIEW C
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BZX84C2V4LT1/D
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