BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal CW D f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) (%) 2450 10 28 180 13.3 53.5 1.2 Features and benefits Easy power control Integrated ESD protection High efficiency Excellent thermal stability Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating. BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF2425M6L180P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF2425M6LS180P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF2425M6L180P Name Description Version - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A earless flanged balanced ceramic package; 4 leads SOT539B BLF2425M6LS180P - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 225 C BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 2 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Rth(j-case) thermal resistance from junction to case Conditions Typ Unit Tcase = 80 C; PL = 180 W 0.38 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V VDS = 28 V - - 3 A VDS = 65 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 24 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5 A - 0.1 - Table 7. RF characteristics Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 10 mA; Tcase = 25 C unless otherwise specified in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 180 W 11.0 13.3 - dB D drain efficiency PL = 180 W 50 53.5 - % RLin input return loss PL = 180 W - 15 9 dB 7. Test information 7.1 Ruggedness in class-AB operation The BLF2425M6L180P and BLF2425M6LS180P are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 10 mA; PL = 180 W (CW); f = 2450 MHz. BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 3 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data. Typical values per section. ZS and ZL defined in Figure 1. f ZS ZL (MHz) () () 2400 5.9 j8.0 2.8 j3.1 2450 8.4 j7.6 2.5 j3.1 2500 10.6 j5.8 2.3 j3.0 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 4 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 7.3 Test circuit C14 C6 C8 C12 C10 C5 R1 C2 C7 C1 R2 C3 C4 C9 C11 C13 aaa-002274 Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.508 mm. See Table 9 for list of components. Fig 2. Component layout for test circuit Table 9. List of components For test circuit, see Figure 2. Component Description Value Remarks [1] C1, C2, C3 multilayer ceramic chip capacitor 15 pF C4, C5, C10, C11 multilayer ceramic chip capacitor 220 nF C6, C12, C13 multilayer ceramic chip capacitor 4.7 F C7 multilayer ceramic chip capacitor 39 pF [2] C8, C9 multilayer ceramic chip capacitor 6.8 pF [3] C14 electrolytic capacitor 220 F, 63 V R1, R2 chip resistor 6.2 [1] American technical ceramics type 100A or capacitor of same quality. [2] American technical ceramics type 800B or capacitor of same quality. [3] American technical ceramics type 100B or capacitor of same quality. BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 SMD 1206 SMD 1206 © NXP B.V. 2013. All rights reserved. 5 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 7.4 Graphical data DDD *S *S G% Ș' DDD Ș' Ș' *S *S G% Ș' 3/ : VDS = 28 V; IDq = 10 mA. 3/ G%P VDS = 28 V; IDq = 10 mA. (1) f = 2400 MHz (1) f = 2400 MHz (2) f = 2450 MHz (2) f = 2450 MHz (3) f = 2500 MHz (3) f = 2500 MHz Fig 3. Power gain and drain efficiency as function of load power; typical values Fig 4. Power gain and drain efficiency as function of load power; typical values BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 6 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 5. EUROPEAN PROJECTION Package outline SOT539A BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 7 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 e 4.2 11.56 0.10 30.94 30.96 9.3 9.27 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA Issue date 12-05-02 13-05-24 SOT539B Fig 6. sot539b_po European projection Package outline SOT539B BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 8 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave ESD ElectroStatic Discharge ISM Industrial, Scientific and Medical LDMOS Laterally Diffused Metal-Oxide Semiconductor SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF2425M6L180P_25M6LS180P v.3 20130712 Product data sheet Modifications: • • • • • • • • • - BLF2425M6L180P_25M6LS180P v.2 The package outline Figure 6 is updated. BLF2425M6L180P_25M6LS180P v.2 20120920 Product data sheet Modifications: Change Supersedes notice - BLF2425M6L180P_25M6LS180P v.1 The status of this document has been changed to Product data sheet. Table 1 on page 1: several changes have been made. Section 1.2 on page 1: several changes have been made. Table 4 on page 2: an item has been removed. Table 6 on page 3: several changes have been made. Table 7 on page 3: several changes have been made. Section 7.1 on page 3: a value has been added. Section 7.4 on page 6: this section has been added. BLF2425M6L180P_25M6LS180P v.1 20120207 Objective data sheet - BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 - © NXP B.V. 2013. All rights reserved. 9 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 10 of 12 BLF2425M6L(S)180P NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 11 of 12 NXP Semiconductors BLF2425M6L(S)180P Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Handling information. . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 July 2013 Document identifier: BLF2425M6L180P_25M6LS180P