HP AMMC-5620-W10 Agilent ammc-5620, 6 - 20 ghz high gain amplifier Datasheet

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Agilent AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 19 dB Typical
• Output Power: 15dBm Typical
• Input and Output Return Loss: < -10
dB
Chip Size:
1410 x 1010 µm (55.5 x 39.7 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness:
100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions:
80 x 80 µm (3.1 x 3.1 mils or larger)
• Positive Gain Slope: + 0.21dB/GHz
Typical
• Single Supply Bias: 5 V @ 95 mA
Typical
Applications
• General purpose, wide-band
amplifier in communication
systems or microwave
instrumentation
Description
Agilent’s AMMC- 5620 MMIC is a
GaAs wide- band amplifier
designed for medium output
power and high gain over the 6
− 20 GHz frequency range. The
3 cascaded stages provide high
gain while the single bias
supply offers ease of use. It is
fabricated using a PHEMT
integrated circuit process. The
RF input and output ports have
matching circuitry for use in
50- Ω environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
• High gain amplifier
AMMC-5620 Absolute Maximum Ratings [1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Drain Supply Voltage
V
7.5
IDD
Total Drain Current
mA
135
PDC
DC Power Dissipation
W
1.0
Pin
RF CW Input Power
dBm
20
Tch
Channel Temp.
°C
+150
Tb
Operating Backside Temp.
°C
-55
Tstg
Storage Temp.
°C
-65
Tmax
Maximum Assembly Temp. (60 sec max) °C
+165
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
AMMC-5620 DC Specifications / Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typical
VDD
Recommended Drain Supply Voltage
V
IDD
Total Drain Supply Current (V DD= 5V)
mA
IDD
Total Drain Supply Current (VDD= 7 V)
mA
105
θ ch-b
Thermal Resistance [3]
(Backside temperature (Tb) = 25°C
°C/W
33
Max.
5
70
95
130
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance at backside temperature
(Tb) = 25°C calculated from measured data.
AMMC-5620 RF Specifications [3] (Tb = 25°C, VDD = 5 V, IDD = 95mA, Zo=50Ω)
Symbol
Parameters and Test Conditions
Units
Min.
Typical
Max.
|S21|2
Small-signal Gain
dB
16
19
22
Gain Slope
Positive Small-signal Gain Slope
dB/GHz
RLin
Input Return Loss
dB
10
13
RLout
Output Return Loss
dB
10
14
|S12|2
Reverse Isolation
dB
P-1dB
Output Power at 1dB Gain Compression @ 20 GHz
dBm
12.5
15
Psat
Saturated Output Power (3dB Gain Compression) @ 20 GHz
dBm
14.5
17
OIP3
Output 3rd Order Intercept Point @ 20 GHz
dBm
23.5
NF
Noise Figure @ 20 GHz
dB
4.2
Note:
3.. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
2
+0.21
- 55
5.0
AMMC-5620 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 95 mA, Zo=50Ω)
0
25
0
-10
15
10
-10
-20
INPUT RL (dB)
ISOLATION (dB)
GAIN (dB)
20
-30
-40
-50
-20
-30
5
-60
0
4
7
10
13
16
19
-70
22
4
7
FREQUENCY (GHz)
10
13
16
19
-40
22
4
7
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
0
10
13
16
19
22
19
22
FREQUENCY (GHz)
Figure 3. Input Return Loss
10
18
15
8
-20
P1dB (dBm)
NF (dB)
OUTPUT RL (dB)
-10
6
4
12
9
6
-30
2
-40
4
7
10
13
16
19
0
22
3
4
7
FREQUENCY (GHz)
10
13
16
19
0
22
4
7
FREQUENCY (GHz)
Figure 4. Output Return Loss
10
13
16
FREQUENCY (GHz)
Figure 5. Noise Figure
Figure 6.Output Power at 1 dB Gain
Compression
AMMC-5620 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50Ω)
25
0
0
Vdd=4V
Vdd=5V
Vdd=6V
20
15
10
Vdd=4V
Vdd=5V
Vdd=6V
-10
INPUT RL (dB)
ISOLATION (dB)
GAIN (dB)
-20
-40
-20
-30
Vdd=4V
Vdd=5V
Vdd=6V
-60
5
-40
0
-50
-80
4
7
10
13
16
FREQUENCY (GHz)
Figure 7. Gain and Voltage
19
22
4
7
10
13
16
FREQUENCY (GHz)
Figure 8. Isolation and Voltage
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
Figure 9. Input Return Loss and Voltage
3
AMMC-5620 Typical Performance vs. Supply Voltage (cont.) (Tb=25°C, Zo=50Ω)
0
20
16
P1dB (dBm)
OUTPUT RL (dB)
-10
-20
Vdd=4V
Vdd=5V
Vdd=6V
-30
12
8
Vdd=4V
Vdd=5V
Vdd=6V
4
0
-40
4
7
10
13
16
19
22
4
7
FREQUENCY (GHz)
10
13
16
19
22
FREQUENCY (GHz)
Figure 10. Output Return Loss and Voltage
Figure 11. Output Power and Voltage
AMMC-5620 Typical Performance vs. Temperature (VDD=5V, Zo=50Ω)
0
20
-10
GAIN (dB)
16
12
-40 C
25 C
85 C
8
0
-40 C
25 C
85 C
-20
-30
-40
-50
4
4
-30
7
10
13
16
19
-70
22
-40 C
25 C
85 C
-40
4
7
FREQUENCY (GHz)
10
13
16
19
22
4
7
FREQUENCY (GHz)
Figure 12. Gain and Temperature
13
7
18
-5
6
15
-10
5
-15
4
P1dB (dB)
3
-40 C
25 C
85 C
-35
4
7
10
13
16
FREQUENCY (GHz)
Figure 15.Output Return Loss and
Temperature
19
-40 C
25 C
85 C
1
22
0
22
9
-40 C
25 C
85 C
2
-30
19
12
6
-25
16
Figure 14. Input Return Loss and Temperature
0
-20
10
FREQUENCY (GHz)
Figure 13. Isolation and Temperature
NF (dB)
OUTPUT RL (dB)
-20
-60
0
4
-10
INPUT RL (dB)
ISOLATION (dB)
24
3
0
4
7
10
13
16
19
FREQUENCY (GHz)
Figure 16. Noise Figure and Temperature
22
4
7
10
13
16
19
FREQUENCY (GHz)
Figure 17. Output Power and Temperature
22
AMMC-5620 Typical Scattering Parameters[1] (Tb=25°C, VDD= 5 V, IDD = 107 mA)
Freq GHz
S11
S21
S12
S22
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
2.00
-2.9
0.72
-147
-23.3
0.07
-176
-50.0
0
46
-1.5
0.85
-72
2.50
-3.3
0.69
-168
-16.1
0.16
146
-46.1
0
-1
-2.5
0.75
-89
3.00
-3.5
0.67
173
-10.0
0.31
114
-44.0
0.01
-46
-3.6
0.66
-104
3.50
-3.7
0.65
154
-4.6
0.59
87
-42.9
0.01
-89
-4.5
0.6
-118
4.00
-3.8
0.64
134
0.8
1.1
62
-42.1
0.01
-132
-5.3
0.54
-136
4.50
-4.0
0.63
111
6.6
2.15
34
-41.5
0.01
-179
-6.7
0.46
-158
5.00
-5.0
0.56
81
12.0
3.96
-5
-42.1
0.01
128
-9.6
0.33
175
5.50
-7.7
0.41
49
15.2
5.73
-50
-44.7
0.01
72
-15.2
0.17
157
6.00
-12.0
0.25
23
16.7
6.84
-91
-49.0
0
19
-21.8
0.08
165
6.50
-16.9
0.14
5
17.0
7.06
-123
-53.7
0
-30
-24.8
0.06
-173
7.00
-21.9
0.08
-8
17.2
7.28
-150
-58.0
0
-78
-26.4
0.05
-164
7.50
-27.2
0.04
-18
17.4
7.41
-173
-60.6
0
-123
-30.0
0.03
-155
8.00
-32.8
0.02
-17
17.9
7.81
164
-61.9
0
-160
-34.5
0.02
-102
8.50
-33.4
0.02
-5
18.2
8.12
142
-64.4
0
-178
-28.3
0.04
-61
9.00
-30.9
0.03
-15
18.4
8.29
121
-64.4
0
-179
-23.8
0.06
-60
9.50
-27.7
0.04
-32
18.4
8.34
101
-63.1
0
169
-21.2
0.09
-65
10.00
-24.9
0.06
-50
18.4
8.35
83
-63.5
0
157
-19.3
0.11
-72
10.50
-22.6
0.07
-66
18.5
8.37
65
-64.4
0
144
-18.1
0.12
-78
11.00
-20.7
0.09
-80
18.5
8.36
48
-64.4
0
145
-17.1
0.14
-84
11.50
-19.3
0.11
-92
18.5
8.37
32
-64.2
0
130
-16.3
0.15
-90
12.00
-18.2
0.12
-103
18.5
8.38
16
-62.1
0
127
-15.7
0.16
-95
12.50
-17.3
0.14
-113
18.5
8.4
1
-63.3
0
126
-15.1
0.18
-101
13.00
-16.6
0.15
-123
18.5
8.43
-14
-64.4
0
125
-14.7
0.18
-105
13.50
-16.0
0.16
-131
18.6
8.48
-29
-62.1
0
118
-14.4
0.19
-110
14.00
-15.6
0.17
-140
18.6
8.53
-44
-61.9
0
107
-14.2
0.2
-115
14.50
-15.3
0.17
-148
18.7
8.6
-58
-62.1
0
107
-14.0
0.2
-120
15.00
-15.1
0.18
-156
18.8
8.71
-73
-62.9
0
98
-13.7
0.21
-126
15.50
-15.0
0.18
-164
18.9
8.81
-87
-64.1
0
82
-13.6
0.21
-131
16.00
-14.9
0.18
-172
19.1
8.97
-101
-61.2
0
94
-13.4
0.21
-136
16.50
-14.9
0.18
179
19.2
9.11
-116
-60.0
0
95
-13.3
0.22
-140
17.00
-15.0
0.18
170
19.3
9.25
-131
-61.8
0
60
-13.3
0.22
-145
17.50
-15.0
0.18
160
19.5
9.43
-145
-62.1
0
80
-13.2
0.22
-150
18.00
-14.9
0.18
149
19.7
9.62
-161
-61.9
0
70
-13.2
0.22
-154
18.50
-14.7
0.18
137
19.9
9.84
-176
-62.7
0
67
-13.3
0.22
-159
19.00
-14.3
0.19
122
20.0
10
168
-61.9
0
70
-13.4
0.21
-166
19.50
-13.8
0.2
106
20.1
10.2
151
-61.9
0
61
-13.6
0.21
-171
20.00
-13.1
0.22
89
20.2
10.3
134
-60.0
0
45
-14.0
0.2
-177
20.50
-11.9
0.25
72
20.3
10.4
117
-60.9
0
41
-14.1
0.2
179
21.00
-10.5
0.3
53
20.3
10.3
99
-64.1
0
38
-14.6
0.19
173
21.50
-9.0
0.35
36
20.2
10.2
80
-67.5
0
13
-15.1
0.18
168
22.00
-7.5
0.42
19
19.9
9.88
60
-67.5
0
5
-15.5
0.17
162
Note:
1. Data obtained from on-wafer measurements
5
Biasing and Operation
Assembly Techniques
The AMMC- 5620 is normally
biased with a single positive
drain supply connected to the
VDD bond pads shown in Figure
19. The recommended supply
voltage is 5 V, which results in
IDD = 95 mA (typical).
The backside of the AMMC- 5620
chip is RF ground. For
microstripline applications, the
chip should be attached directly
to the ground plane (e.g., circuit
carrier or heatsink) using
electrically conductive epoxy[1].
No ground wires are required
because all ground connections
are made with plated throughholes to the backside of the
device.
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plated metal
shim (same length and width as
the MMIC) under the chip,
which is of the correct
thickness to make the chip and
adjacent circuit coplanar.
Refer the Absolute Maximum
Ratings table for allowed DC
and thermal conditions.
The amount of epoxy used for
chip and or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip or
shim. The ground plane should
be free of any residue that may
jeopardize electrical or
mechanical attachment.
The location of the RF bond
pads is shown in Figure 20.
Note that all the RF input and
output ports are in a GroundSignal- Ground configuration.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single bond
wire is sufficient for signal
connections, however doublebonding with 0.7 mil gold wire
or the use of gold mesh[2] is
recommended for best
performance, especially near the
high end of the frequency range.
6
Thermosonic wedge bonding is
the preferred method for wire
attachment to the bond pads.
Gold mesh can be attached
using a 2 mil round tracking
tool and a tool force of
approximately 22 grams with an
ultrasonic power of roughly 55
dB for a duration of 76 ± 8 mS.
A guided wedge at an ultrasonic
power level of 64 dB can be
used for the 0.7 mil wire. The
recommended wire bond stage
temperature is 150 ± 2 °C.
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly temperature
and time.
The chip is 100 µm thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface and
should be handled by the edges
or with a custom collet (do not
pick up die with vacuum on die
center.)
This MMIC is also static
sensitive and ESD handling
precautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is
recommended.
2. Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
VD1
Feedback
network
Feedback
network
Feedback
network
RF Output
Matching
Matching
RF Input
Matching
Matching
Figure 18. AMMC-5620 Schematic
To power supply
100 pF chip capacitor
Gold plated shim
RF Input
AMMC-5620
RF Output
Figure 19. AMMC-5620 Assembly Diagram
7
875 (VDD)
1010
910
350 (RFOut)
350 (RFIn)
0
0
90
1315
1410
Figure 20. AMMC-5620 Bond Pad Locations.
(dimensions in microns)
Ordering Information:
AMMC-5620-W10 = waffle pack, 10 devices per tray
AMMC-5620-W50 = waffle pack, 50 devices per tray
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
Data subject to change.
Copyright 2003 Agilent Technologies, Inc.
May 21, 2004
5989-0530EN